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    DUAL-GATE YB Search Results

    DUAL-GATE YB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    DUAL-GATE YB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3SK318

    Abstract: DSA003643
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 3SK318 DSA003643

    3SK319

    Abstract: ADE-208-602 Hitachi DSA00395
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 Hitachi DSA00395

    3SK319

    Abstract: Hitachi DSA002759
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 Hitachi DSA002759

    marking is "yb-"

    Abstract: Hitachi DSA002759
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 marking is "yb-" Hitachi DSA002759

    dual-gate YB

    Abstract: 3SK318 SC-82AB Hitachi DSA00336
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 ADE-208-600 dual-gate YB 3SK318 SC-82AB Hitachi DSA00336

    3SK319

    Abstract: ADE-208-602 DSA003643
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 ADE-208-602 3SK319 ADE-208-602 DSA003643

    3SK318

    Abstract: 3SK318YB-TL-E 3SK318YB-TL
    Text: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0819-0200 Previous ADE-208-600 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK318 REJ03G0819-0200 ADE-208-600) PTSP0004ZA-A 3SK318 3SK318YB-TL-E 3SK318YB-TL

    ADE-208-602

    Abstract: 3SK319 3SK319YB-TL-E
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 REJ03G0820-0200 ADE-208-602) PLSP0004ZA-A ADE-208-602 3SK319 3SK319YB-TL-E

    Untitled

    Abstract: No abstract text available
    Text: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier REJ03G0820-0200 Previous ADE-208-602 Rev.2.00 Aug.10.2005 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V


    Original     		PDF 3SK319 REJ03G0820-0200 ADE-208-602) PLSP0004ZA-A

    TRIACS EQUIVALENT LIST

    Abstract: IC of XOR GATE sc70-5 IGBT driver 74 XOR GATE SC70-5 SC70-6 NC7SZ04 NC7SZ04M5 NC7SZ14M5 NC7SZ374
    Text: TinyLogic Fairchild’s Offering Fairchild’s TinyLogic® family consists of a broad spectrum of high speed, low power, CMOS single and dual gate logic functions in a choice of six space saving packages: SOT23-5, SC70 6-lead, US8 8-lead, and MicroPak 6 and 8 terminal leadless packages.


    Original     		PDF OT23-5, NC7SZ04M5 NC7SZ14M5, Power220® Power247® TRIACS EQUIVALENT LIST IC of XOR GATE sc70-5 IGBT driver 74 XOR GATE SC70-5 SC70-6 NC7SZ04 NC7SZ14M5 NC7SZ374

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		PDF 74LVC2G38 74LVC2G38

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 10 — 28 June 2012 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		PDF 74LVC2G38 74LVC2G38

    Untitled

    Abstract: No abstract text available
    Text: 74LVC2G38 Dual 2-input NAND gate; open drain Rev. 11 — 8 April 2013 Product data sheet 1. General description The 74LVC2G38 provides a 2-input NAND function. The outputs of the 74LVC2G38 devices are open-drain and can be connected to other open-drain outputs to implement active-LOW, wired-OR or active-HIGH wired-AND


    Original     		PDF 74LVC2G38 74LVC2G38

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TC74HC390AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC390AP, TC74HC390AF, TC74HC390AFN Note The JED EC SOP (FN) is not available in Japan. DUAL DECADE COUNTER The TC74HC390A is a high speed CMOS DUAL DECADE COUNTER fabricated w ith silicon gate C2MOS technology.


    OCR Scan     		PDF TC74HC390AP/AF/AFN TC74HC390AP, TC74HC390AF, TC74HC390AFN TC74HC390A 16PIN DIP16-P-300-2 16PIN 200mil

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC153 Dual 4 -In p u t Data S elector/M ultiplexer High-Performance Silicon-Gate CMOS The MC74HC153 is identical in pinout to the LS153. The device inputs are com patible with standard CMOS outputs; with pullup resistors, they are


    OCR Scan     		PDF C74HC153 MC74HC153 LS153. HC153 HC253, MC74HC153/D

    MC74HC253

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC253 Dual 4 -In p u t Data Selector/ M ultiplexer w ith 3 -S ta te Outputs N SUFFIX PLASTIC PACKAGE CASE 648-08 High-Performance Silicon-Gate CMOS The MC74HC253 is identical in pinout to the LS253. The device inputs are


    OCR Scan     		PDF MC74HC253 LS253. HC253 HC153 DL129

    MSM6224

    Abstract: MSM6224RS ,TONE DIALER
    Text: OKI semiconductor MSM6224RS DTMF TONE DIALER LSI GENERAL DESCRIPTION The MSM6224RS is a TONE dialer LSI w hich is fabricated by O ki's low power consum p­ tio n CMOS silicon gate technology. The MSM6224RS can generate 16 DTM F Dual Tone M u lti Frequency signals each of


    OCR Scan     		PDF MSM6224RS MSM6224RS TELEPHONE-MSM6224 MSM6224 ,TONE DIALER

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC153 Dual 4 -In p u t D ata S elector/M ultiplexer High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 648-08 The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are


    OCR Scan     		PDF MC74HC153 LS153. HC153 HC253, DL129 MC74HC153

    IM 5136 ifm

    Abstract: 74hc153
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C54/74HC153 Dual 4-Input Data Selector/M ultiplexer J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM OS The MC54/74HC153 is identical in pinout to the LS153. The device inputs are com patible w ith standard CMOS outputs; w ith pullup resistors, they are compatible


    OCR Scan     		PDF C54/74HC153 MC54/74HC153 LS153. HC153 HC253, MC54/74HC153 IM 5136 ifm 74hc153

    b10d

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC253 Dual 4-Input Data Selector/ M ultiplexer w ith 3-State Outputs J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CMOS The M C 54/74H C 25 3 is id en tica l in p in o u t to the LS253. The device in p u ts are


    OCR Scan     		PDF MC54/74HC253 54/74H LS253. HC253 HC153 b10d

    Untitled

    Abstract: No abstract text available
    Text: T -U -2t~ 5l MOTOROLA S E M IC O N D U C TO R TECHNICAL DATA MC54/74HC153 Dual 4 -In p u t Data S elector/ M ultip lexer J SUFFIX CERAMIC CASE 620*09 High-Performance Silicon-Gate CM OS The MC54/74HC153 is identical in pinout to the LS153. The device inputs are


    OCR Scan     		PDF MC54/74HC153 MC54/74HC153 LS153. HC153 HC253,

    Untitled

    Abstract: No abstract text available
    Text: b 3 b ? S S 2 D G t117fll 'Ifl? • M0T4 MOTOROLA SEMICONDUCTOR ■MOTOROLA SC LOGIC blE D TECHNICAL DATA MC54/74HC153 Dual 4-Input Data Selector/M ultiplexer J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CM O S The MC54/74HC153 is identical in pinout to the LS153. The device inputs are


    OCR Scan     		PDF 117fll MC54/74HC153 LS153. HC153 HC253, MC54/74HC153

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C74HC253 Dual 4 -In p u t Data S elector/ M ultiplexer w ith 3 -S ta te Outputs High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 6 4 8 -0 8 - . ï f f f i ï 1 The MC74HC253 is identical in pinout to the LS253. The device inputs are


    OCR Scan     		PDF C74HC253 MC74HC253 LS253. HC253 HC153 C74HCXXXN C74HCXXXD MC74HC253/D

    HC253

    Abstract: LS153 MC74HC153 MC74HCXXXD MC74HCXXXN hc153 motorola
    Text: M O T O R O LA SEMICONDUCTOR TECHNICAL DATA Dual 4-Input Data Selector/M ultiplexer MC74HC153 High-Performance Silicon-Gate CMOS N SUFFIX PLASTIC PACKAGE CASE 6 4 8 -0 8 The MC74HC153 is identical in pinout to the LS153. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are


    OCR Scan     		PDF MC74HC153 LS153. HC153 HC253, MC74HC153/D HC253 LS153 MC74HCXXXD MC74HCXXXN hc153 motorola