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    E C B BC 635 TRANSISTOR Search Results

    E C B BC 635 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    E C B BC 635 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bc 352 b

    Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


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    PDF Q68000-A3360 Q68000-A2285 Q68000-A3361 bc 352 b siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366

    BC639

    Abstract: BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


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    PDF Q68000-A3360 Q68000-A2285 Q68000-A3361 BC639 BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63

    bc 640

    Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
    Text: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365


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    PDF Q68000-A3365 Q68000-A3366 Q68000-A3367 bc 640 BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636

    cbc635

    Abstract: bc639 motorola
    Text: BC635 BC637 BC639 M A X IM U M R A TIN G S Rating Sym bol C o lle c to r E m itte r V o lta g e VCEO U nit BC BC BC 635 637 639 45 60 80 Vdc 45 60 80 Vdc CASE 29-04, STYLE 14 TO-92 TO-226AA C o lle c to r-B a s e V o lta g e VC BO E m itte r B ase V o lta g e


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    PDF BC635 BC637 BC639 O-226AA) cbc635 bc639 motorola

    cbc635

    Abstract: No abstract text available
    Text: BC635 BC637 BC639 M A X IM U M RATINGS R a tin g Sym bol BC BC BC 635 637 639 U n it C o ile c to r-E m itte r V o ltage VCEO 45 60 80 Vdc C o lle c to r-B a s e V o lta g e VCBO 45 60 80 Vdc E m itte r-B a s e V o lta g e vebo 5 0 Vdc C o lle c to r C u rre n t - C o n tin u o u s


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    PDF BC635 BC637 BC639 O-226AA) BC635, BC637, cbc635

    Bc636

    Abstract: BC640 639 TRANSISTOR PNP BC635 BC638
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC636/638/640 SWITCHING AND AMPLIFIER APPLICATIONS • C om plem ent to BC 635/637/639 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter Voltage at R b e = 1 Kohm C ollecto r E m itter Voltage


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    PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC640 639 TRANSISTOR PNP BC635 BC638

    BC639 18

    Abstract: 2N929 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72
    Text: AF transistors Continued Type Group Structure FigNr. Maximum ratings C h aracteristics ^tot at 7C mA ^CEO V fj at MHz 7C mA af e at /q and LU 'am b = +45° c W mA F at dB / kHz BC 635 NPN 27 1.06) 1000 45 50 50 40-250 150 2 - - BC 636 PNP 27 1.06) 1000 45


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    PDF BCW60 BCW61 BC639 18 2N929 2N930 BCX70 BCX71 BCY58 BCY59 BCY72

    BC639

    Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
    Text: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.


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    PDF 636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138

    transistor C 639 W

    Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
    Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A


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    PDF 150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639

    transistor BC 236

    Abstract: bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK
    Text: 17E T> TELEFUNKEN ELECTRONIC • 0^2DDBb 000^30^ BC 635 • BC 637 • BC 639 TTIILIIFIUIÄINI electronic Creative 'ftehnotag>ea r - a i -33 Silicon NPN Epitaxial Planar Transistors Applications: For complementary AF driver stages features: • • High power.dissipation


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    PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistor C 639 W transistors BC 23 bc 569 A27 637 transistor BC 639 A27 639 marking code transistor HK

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors • BC 635 . BC 639 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 636, BC 638, BC 640 PNP Type Marking BC 635 BC 637 BC 639 Q68000-A3360 Q68000-Â2285


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    PDF Q68000-A3360 Q68000-Ã Q68000-A3361 235kG5 BC635 a23Sb05 01H0S37 S3Sb05 D1H053Ã

    transistor Bc 540

    Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635

    BC640

    Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
    Text: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.


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    PDF 635/BC 637/BC BC640 bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143

    bc 540

    Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
    Text: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500


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    PDF BCW90 CB-76 bc 540 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635

    transistor bf 422 NPN

    Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


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    PDF BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    PDF BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B

    639 TRANSISTOR PNP

    Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN

    WM 53B

    Abstract: No abstract text available
    Text: SIEM ENS PNP Silicon AF Transistors • • • • BC 636 . BC 640 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 635, BC 637, BC 639 NPN Type Marking BC 636 BC 638 BC 640 Ordering Code Q68000-A3365


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    PDF Q68000-A3365 Q68000-A3366 Q68000-A3367 EHP00204 EHP00202 EHP00205 flS35bDS 01EDSM2 fl235b05 D1205M3 WM 53B

    TRANSISTOR 636

    Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
    Text: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation


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    PDF 150mA) CB-76 TRANSISTOR 636 pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639

    q1205

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)


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    PDF C62702-C748 150iiin E35LD5 flE35bQ5 q1205

    transistor BC 310

    Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor

    transistor Bc 540

    Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
    Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    PDF BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310

    transistor BC 236

    Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
    Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:


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    PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor