Vl02
Abstract: 9.75 GHz oscillator
Text: D a ta S h e e l ^ EiMhDIGICS Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs ÍC Source _ REV 2 FUNCTIONAL i? ®! Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability
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AKD2806
Vl02
9.75 GHz oscillator
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ku-band 15 watt SSPA
Abstract: RF Prime micro-d 15 pin connectors "ku band" amplifier micro-d connectors Scans-0021413 WR-62 waveguide SSPA C Band mmic A amplifier 250W
Text: Ku-Band Hiqh Performance P o w e r/^ Q ifie r 25 Watt This amplifier is a 25W linear Ku-band SSPA that is based on wideband driver modules and a balanced Ku-band MMIC output stage. This 14.40-15.4 GHz amplifier includes a T IL enable / disable function, a temperature compensation
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20VDC
33VDC.
AS9100
98dBm
-60dBc
50msec
500nsec
65degC
20VDC
33VDC
ku-band 15 watt SSPA
RF Prime
micro-d 15 pin connectors
"ku band" amplifier
micro-d connectors
Scans-0021413
WR-62 waveguide
SSPA C Band
mmic A
amplifier 250W
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Untitled
Abstract: No abstract text available
Text: Data Sheet E f e D h D O AKD12030 Ku-Band DBS MMIC Downconverter G Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter • 6 dB Noise Figure • 35 dB Conversion Gain • Small Size • Low Cost • High Reliability • Covers Japanese BS Band
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AKD12030
AKD12030
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E-band mmic
Abstract: No abstract text available
Text: HMC7447 v00.0913 POWER DETECTOR - CHIP E-BAND DETECTOR 71 - 86 GHz Typical Applications Features The HMC7447 monitors Tx Output Power for: Frequency: 71 - 86 GHz • E-Band Communications Systems Input Power Range: -0.5 to +23.5 dBm • Test Equipment & Sensors
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HMC7447
HMC7447
E-band mmic
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Untitled
Abstract: No abstract text available
Text: Data Sheet v E w W j G I Ç v ; ' : " " 1 Ku-Band DBS MMIC Downconverter S Your GaAs 1C Source Prellmi“ ^ The ANADIGICS Ku-Band MMIC Downconverter is a low-cost, high volume GaAs MMIC which is suitable for use in Ku-Band DBS systems, where low power consumption is required. The AKD2401 covers all Astra
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AKD2401
AKD2401
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Untitled
Abstract: No abstract text available
Text: •I QÔ14S77 00DDLÜ3 321 E mBOGO* AKD2806 Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION Your GaAs IC Source REV 2 FEATURES FUNCTIONAL BLOCK DIAGRAM Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability Surface Mount Package
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14S77
00DDLÃ
AKD2806
AKD2806
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CDH60
Abstract: NEMJ10006 MMIC code D PIN diode 12 GHz 60 GHz PIN diode NEMJ10003 diode PIN 60 Ghz mmic j 60 GHz PIN diode gaas E3 MMIC
Text: □111745 0000345 3 BME D HICRONETICS INC IMRÔ ff" Single Pole Three Throw Z • T 'S f '/ / LOW BAND 10 MHz to 1000 MHz (GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) 'D E a c e t g n f i z a •GaAs, MMIC and PIN diode technology ♦High reliability
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NEMJ10003
MIL-STD-105
NEMJ10006
MIL-STD-883
CDH60
MMIC code D
PIN diode 12 GHz
60 GHz PIN diode
diode PIN 60 Ghz
mmic j
60 GHz PIN diode gaas
E3 MMIC
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5212 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5212 is a GaAs MMIC chip especially designed for 24.5 ~ 26.5 GHz band High
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MGFC5212
MGFC5212
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5211 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-Stage Power Amplifier DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High
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MGFC5211
MGFC5211
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5213 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. K-Band 2-S tage Power Amplifier DESCRIPTION The MGFC5213 is a GaAs MMIC chip especially designed for 27.5 ~ 30.0 GHz band High
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MGFC5213
MGFC5213
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ku-band lnb block diagram
Abstract: No abstract text available
Text: . - E • 0Ö14577 □□DG77Ö m m oc ” lüfl AKD2806 Ku-Band DBS MMIC Downconverter ADVANCED PRODUCT INFORMATION REV 3 Your GaAs IC Source FUNCTIONAL BLOCK DIAGRAM FEATURES Integrated Monolithic Downconverter Covers both FSS & DBS Bands Band Switching Capability
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AKD2806
D814S77
AKD2806,
ku-band lnb block diagram
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MMIC cross
Abstract: No abstract text available
Text: SILICON MMIC NEC UPC1685B/G PRELIMINARY Wide-Band Mixer/Oscillator MMIC FE A TU R E S P H Y S IC A L D IM E N S IO N S Units in mm • WIDE-BAND OPERATION: DC to 890 MHz UPC1685B • SMALL PACKAGE • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation
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UPC1685B/G
UPC1685B
UPC1685
UPC1685B/G,
34-6393/FAX
NQTICE-509
5M-5/88
MMIC cross
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vD1A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5108 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5108 is a GaAs MMIC chip especially designed for 24.0 ~ 27.0 GHz band
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MGFC5108
MGFC5108
100pF
vD1A
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ka-band amplifier
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5110 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The M GFC5110 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band
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MGFC5110
GFC5110
100pF
ka-band amplifier
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LNA ka-band
Abstract: MITSUBISHI CAPACITOR
Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> PRELIMINARY MGFC5109 N o tice : T h is is not a final specification S o m e para m e tric lim its are s u b je c t to change. Ka-Band 3-Stage Self Bias Low Noise Amplifier DESCRIPTION The MGFC5109 is a GaAs MMIC chip especially designed for 27.0 ~ 30.0 GHz band
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MGFC5109
MGFC5109
LNA ka-band
MITSUBISHI CAPACITOR
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Untitled
Abstract: No abstract text available
Text: HITTITE MICROWAVE CORPORATION GaAs MMIC Buffered C-Band VCO HMC131 PR E LIM IN AR Y DATA SHEET, M AY 1992 Features 1 GHz TUNING RANGE SINGLE +5V SUPPLY OPERATION NO EXTERNAL VARACTOR REQUIRED General Description The HMC131 chip is a C-Band VCO with on-chip
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HMC131
HMC131
18dBm
100MHz
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Untitled
Abstract: No abstract text available
Text: f i . Ki V HMC131C8 MICROWAVE CORPORATION I GaAS MMIC SMT BUFFERED C-BAND VC F E B R U A R Y 1998 Features General Description 1 GHz T U N IN G RAN G E The HMC131C8 is a SM T C-Band VCO S IN G L E + 5 V S U P P LY O P ER ATIO N with on-chip buffering for improved load iso
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HMC131C8
HMC131C8
NICKEL100
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Untitled
Abstract: No abstract text available
Text: E AWT918 TX POWER MMIC h m p iG ic s ' A dvanced Product Information Your GaAs IC Source RevO CELLULAR/PCS Dual Band GaAs Power Amplifier 1C DESCRIPTION: The AWT918 is a monolithic GaAs Power Amplifier. It can be used in the following dual band handset applications:GSM900/DCS1800,
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AWT918
AWT918
GSM900/DCS1800,
GSM900/GSM1900
AMPS/GSM1900.
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Z311
Abstract: MGF7104
Text: MITSUBISHI D IS CR ET E SC blE ]> □ □ m cÎD2 TME • H I T S ^ Amitsubishi GaAs MMIC MGF7100 SERIES ELECTRONIC DEVICE GROUP 900MHz Band GaAs Power Amplifier IC DESCRIPTION PIN CONFIGURATION (TOP VIEW) MGF7100 Series are monolithic microwave integrated circuits for use in 900MHz band
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MGF7100
900MHz
200mA
Z311
MGF7104
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x-band limiter
Abstract: MMIC limiter LNA x-band x-band MMIC limiter x-band lna chip band Limiter MA01502D x-band mmic lna x-band mmic mmic AMPLIFIER x-band 10w
Text: V 1.00 MA01502D X-Band Limiter/Low Noise Amplifier 8.5 –12.0 GHz Features E E E E 8.5-12.0 GHz GaAs MMIC Amplifier 8.5 to 12.0 GHz Operation 10 Watt CW On-chip Limiter Balanced Design –Excellent Return Loss Self-Aligned MSAG MESFET Process Primary Applications
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MA01502D
MA01502D
x-band limiter
MMIC limiter
LNA x-band
x-band MMIC limiter
x-band lna chip
band Limiter
x-band mmic lna
x-band mmic
mmic AMPLIFIER x-band 10w
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TQP7M4002
Abstract: LB514
Text: TQP7M4002 Advance Datasheet 3V Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC Description: Package Outline : The TQP7M4002 is a quad-band capable 3V power amplifier MMIC for GSM applications. Fabricated with a high-reliability InGaP GaAs HBT technology, the MMIC supports GPRS Class12 operation. By virtue of advanced design techniques,
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TQP7M4002
E-GSM/GSM850/DCS/PCS
TQP7M4002
Class12
LB514
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MMIC code D
Abstract: MMIC code 61 J10003 mmic code R mmic code h
Text: MICRONETICS INC 34E D 61 blll742 Q00034? 7 H M R O Single Pole Four Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) DES6 EH0 f l f f e .Si. j. •GaAs, MMIC and PIN diode technology •High reliability •Hermetically-sealed
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blll742
Q00034?
MIL-STD-105
MMIC code D
MMIC code 61
J10003
mmic code R
mmic code h
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x-band mmic
Abstract: DA10 DA11 MA03503D
Text: V 1.00 MA03503D X-Band Gain/Phase Control MMIC 8.0 –11.0 GHz Features E E E E E 8.0-11.0 GHz Parallel Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5-bit Attenuator Parallel Control Input 50 Ω Input and Output Impedance Self-Aligned MSAG MESFET Process
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MA03503D
MA03503D
x-band mmic
DA10
DA11
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MA03501D
Abstract: x-band mmic
Text: V 1.00 MA03501D X-Band Gain/Phase Control MMIC 8.0 –11.0 GHz Features E E E E E 8.0-11.0 GHz Serial Input Control MMIC 8.0 to 11.0 GHz Operation 6-bit Phase Shifter and 5-bit Attenuator Serial Control Input 50 Ω Input and Output Impedance Self-Aligned MSAG MESFET Process
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MA03501D
MA03501D
x-band mmic
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