TC58NVG1S3ETA00
Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.
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TC58NVG1S3ETA00
TC58NVG1S3E
2048blocks.
2112-byte
2010-01-25C
TC58NVG1S3ETA00
TC58NVG1S3ET
TC58NVG1S3
TC58NVG1S3ETA
DIN2111
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Untitled
Abstract: No abstract text available
Text: Advance Information CAT25C256 256K-Bit SPI Serial CMOS E2PROM FEATURES • 100,000 Program/Erase Cycles ■ 5 MHz SPI Compatible ■ 100 Year Data Retention ■ 1.8 to 6.0 Volt Operation ■ Self-Timed Write Cycle ■ Hardware and Software Protection ■ 8-Pin DIP/SOIC and 20-Pin TSSOP
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CAT25C256
256K-Bit
20-Pin
64-Byte
CAT25C256
32Kx8
25C256
25C256:
2000/Reel
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X28LV010
Abstract: No abstract text available
Text: X28LV010 1M 128K x 8 Bit 3.3 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 70, 90, 120, 150ns • Simple Byte and Page Write —Single 3.3V±10% supply —No external high voltages or VPP control circuits —Self-timed • no erase before write
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X28LV010
150ns
X28LV010
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sck 054
Abstract: 555H AN19 X25640 X25650 8051 microcontrollers spi interfacing to 8051
Text: Interfacing the X25650 to 8051 Microcontrollers Application Note May 6, 2005 AN19.0 Author: Applications Staff The following code demonstrates how Intersil's X25650 family of SPI serial E2PROMs can be interfaced to the 8051 microcontroller family when connected as shown in Figure 1.
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X25650
X25650
sck 054
555H
AN19
X25640
8051 microcontrollers
spi interfacing to 8051
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motorola 6805
Abstract: X25C020 X24C00 X24C01 X24C02 X24C04 X24C08 X25C02
Text: Interfacing the X24C00 to the Motorola 6805 Microcontroller Application Note May 4, 2005 AN26.0 Author: Applications Staff The following code demonstrates how the Intersil X24C00 serial E2PROM could be interfaced to the Motorola 6805 microcontroller when connected as shown in Figure 1. The
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X24C00
X24C00
X24C01,
X24C02,
X24C04,
X24C08,
X24C016
X25C02,
X25C020,
X25C040
motorola 6805
X25C020
X24C01
X24C02
X24C04
X24C08
X25C02
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0C00
Abstract: 1C00 X68C64 X86C64
Text: Preliminary Information X86C64 Z8 Microcontroller Family Compatible X86C64 64K 8192 x 8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION • The X86C64 is an 8K x 8 E2PROM fabricated with advanced CMOS Textured Poly Floating Gate Technology. The X86C64 features a Multiplexed Address and
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X86C64
X86C64
0C00
1C00
X68C64
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sck 084
Abstract: X25256
Text: Preliminary Information X25256 256K 32K x 8 Bit 5MHz SPI Serial E2PROM with Block Lock Protection FEATURES • 5MHz Clock Rate • Low Power CMOS —<1µA standby current —<5mA active current • 2.5V To 5.5V Power Supply • SPI Modes 0,0 & 1,1 • 32K X 8 Bits
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X25256
sck 084
X25256
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t04 68 3 pin diode
Abstract: X24C00 AN12 AN22 AN32 F-111
Text: APPLICATION NOTES A V A I L A B L E X24C00 AN4 • AN12 • AN22 • AN26 • AN32 X24C00 128 Bit 16 x 8 Bit Serial E2PROM FEATURES DESCRIPTION • • • The X24C00 is a CMOS 128 bit serial E2PROM, internally organized as 16 x 8. The X24C00 features a serial
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X24C00
X24C00
t04 68 3 pin diode
AN12
AN22
AN32
F-111
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AN84
Abstract: X24F128
Text: APPLICATION NOTE A V A I L A B L E AN84 X24F128 128K 16K x 8 Bit 2-Wire SerialFlash with Block Lock Protection FEATURES DESCRIPTION • Save Critical Data with Programmable Block Lock Protection —Block lock 0, 1/4, 1/2, or all of E2PROM array —Software program protection
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X24F128
100KHz
AN84
X24F128
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X24C01
Abstract: X24C16
Text: X24C01 1K 128 x 8 Bit Serial E2PROM DESCRIPTION • 2.7V to 5.5V Power Supply • Low Power CMOS —Active current less than 1 mA —Standby current less than 50 µA • Internally Organized 128 x 8 • 2 Wire Serial Interface —Bidirectional data transfer protocol
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X24C01
X24C01
X24C16
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TC58DYG02A5TA00
Abstract: toshiba NAND Technology Code
Text: TC58DYG02A5TA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1-GBIT 128M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58DYG02A5 is a 1-Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static
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TC58DYG02A5TA00
TC58DYG02A5
528-byte
TC58DYG02A5TA00
toshiba NAND Technology Code
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TC58NYG0S3E
Abstract: TC58NYG0S3ETA00 TC58NYG0S
Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
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TC58NYG0S3ETA00
TC58NYG0S3E
1024blocks.
2112-byte
2011-03-01C
TC58NYG0S3ETA00
TC58NYG0S
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IC H 102 D6
Abstract: BL7448SM 20KHZ ISO7816 8k eeprom 1PSC 02 PSC04
Text: BL7448SM 8K 位 EEPROM 逻辑加密存 储卡电路 一概述 三、管脚描述 BL7448SM 是采用 0.35umCMOS E2PROM 工艺制造的 IC 卡用芯片 模块 。 1024 字节主存储器,带写保护功能，具有可编 程密码(PSC)。 二、特点 图 1 管脚图
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BL7448SM
BL7448SM
35umCMOS
ISO7816
70VCC
15VGND
20KHz)
IC H 102 D6
20KHZ
ISO7816
8k eeprom
1PSC 02
PSC04
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ROM80
Abstract: D103 prom ic
Text: BL7431A 256位EEPROM逻辑加密电路 芯片 一概述 BL7431A是采用1.2微米CMOS E2PROM工艺的 IC卡用芯片 模块 ，256位E2PROM存储单元， 带逻辑加密功能。可广泛应用于智能网公话业务。 二、特点 • • • • •
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BL7431A
256EEPROM
BL7431A1
256E2PROM
256EEPROM256EEPROM,
ROM80
D103
prom ic
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tc58v32ft
Abstract: TC58V32
Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32
TC58V32FT
528-byte,
528-byte
TC58V32FT--
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Untitled
Abstract: No abstract text available
Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory
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TC58A040
256-bit
TC58A040F--29
OP28-P-450
TC58A040F--
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.
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TC58V32DC
TC58V32DC
528-byte,
528-byte
C-22A
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S-29221
Abstract: S-24C16ADPA-01
Text: Classification By Memory Size And Package Type 3-WIRE E2PROM 1K bit 2 K b it 4K bit DIP SOP1 SOP2 S-29130ADPA S-29130AFJA-TB S-29130ADFJA-TB S-29131ADPA S-29131 AFJA-TB S-29L131ADFE-TB S-29L130AFE-TB S-29L130ADFE-TB S-29220ADPA S-29220AFJA-TB S-29220ADFJA-TB
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S-29130ADPA
S-29131ADPA
S-29220ADPA
S-29221
S-29330ADPA
S-29331
S-29430ADP
S-29130AFJA-TB
S-29131
S-29L130AFE-TB
S-24C16ADPA-01
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Q67100-H5092
Abstract: SDA 2516-5
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
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Q67100-H5092
00b3272
SDA 2516-5
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TC5816
Abstract: No abstract text available
Text: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ADC SILICON GATE CMOS 16 MBIT 2 M x 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only
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TC5816
264-byte,
264-byte
TC5816ADC--37_
FDC-22
TC5816ADC--38*
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TMP47E186M
Abstract: toshiba ta 8653 n
Text: TOSHIBA TMP47P186/187 CMOS 4-bit Microcontroller TMP47P186M /TMP47P187M The TMP47P186M/187M is a system evaluation LSI w ith a built-in 1K-byte E2PROM as ROM. Like the MBM28C64/ TheTMP47P186M/187M can w rite /verify data using a PROM w riter connection adaptor socket.
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TMP47P186/187
TMP47P186M
/TMP47P187M
TMP47P186M/187M
MBM28C64/
TheTMP47P186M/187M
TMP47E186M/187M.
asTMP47E186M/187M.
TMP47E186M
toshiba ta 8653 n
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microprocessor in ROBOT SYSTEMS
Abstract: RAM 2816 J24A N24A NMC9816A NMC9816A-20 NMC9816A-25 NMC9816A-35
Text: NM C 9816A 16,384-Bit 2k x 8 E2PROM General Description A n optional high voltage chip erase feature is provided for quick erasure of the m em ory data pattern in a single 9 m sec Chip Erase Cycle. T h e density, and level o f integrated control, m ake the
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NMC9816A
384-Bit
NMC98l6A
microprocessor in ROBOT SYSTEMS
RAM 2816
J24A
N24A
NMC9816A-20
NMC9816A-25
NMC9816A-35
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8052AH-BASIC
Abstract: fprog2 programmer BASIC-52 8052ah basic fprog 2 fprog II fprog assembly language program for speed control of dc fprog programmer 8032AH
Text: in te i” 8052AH-BASIC Full BASIC Interpreter in ROM on a Single Chip BCD Floating Point Math Generates All Timing Necessary to Program EPROMS and E2PROMS Fast Tokenized Interpreter “Stand Alone” Software Development All Arithmetic and Utility Routines Can
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8052AH-BASIC
8052AH-BASIC
isan8052AH
BASIC-52,
fprog2 programmer
BASIC-52
8052ah basic
fprog 2
fprog II
fprog
assembly language program for speed control of dc
fprog programmer
8032AH
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Untitled
Abstract: No abstract text available
Text: •> g o u l d A A l I « Semiconductors CMOS Programmable Electrically Erasable Logic Device PEEL 273-15/30 Features — PC-based software translates existing JEDEC files to 273 format • Advanced CMOS E2PROM Technology • Architectural and Design Enhancements
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