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    E53-Q VOLTAGE UNIT Search Results

    E53-Q VOLTAGE UNIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    E53-Q VOLTAGE UNIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OMRON E5CN

    Abstract: omron zen 10c1dr-d-v1 Omron SPEED sensor 12v m16 OMRON H5CX programming manual omron zen 10c1ar-a-v1 omron TS 101 DA analogue extension modules ZEN 10C1DR-D-V1 sv 120 230 liquids dual level relay manual omron e5cs Omron H7CR Catalog
    Text: INDUSTRIAL COMPONENTS Product Selector 2004 / 2005 • Electromechanical relays • Timers • Counters • Programmable relays • Level and leakage controllers • Industrial switches • Pushbutton switches • Low voltage switch gear • Temperature controllers


    Original     		PDF

    omron e5a

    Abstract: E5EJ-A2HB Omron Type E5AJ-A2HB E5EJ-A2HM MANUAL E5EJ-A2HB MANUAL E5AJ-A2HB E5EJ-A2HM IE5A E5A/EJ E5AJ-A2HM
    Text: Temperature Controller IE5A/EJ Fuzzy Self-tuning Temperature Controller with Advanced PID 2-PID Control ie5aj ie5ej DIN-size: 96 x 96 mm (E5AJ), 48 x 96 mm (E5EJ) Fuzzy self-tuning continuously optimizes temperature control. Up to 4 setpoints, selectable by external volt-free


    Original     		PDF 12-bit RS-485 RS-422 omron e5a E5EJ-A2HB Omron Type E5AJ-A2HB E5EJ-A2HM MANUAL E5EJ-A2HB MANUAL E5AJ-A2HB E5EJ-A2HM IE5A E5A/EJ E5AJ-A2HM

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


    OCR Scan     		PDF RN4610 961001EAA2'

    RN4610

    Abstract: No abstract text available
    Text: TOSHIBA RN4610 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4610 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1 .6 - 0 .1 • • •


    OCR Scan     		PDF RN4610 RN4610

    RN4612

    Abstract: sc-74 e5
    Text: TOSHIBA RN4612 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4612 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm A N D DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1 .6 - 0 .1 •


    OCR Scan     		PDF RN4612 RN4612 sc-74 e5

    RN4608

    Abstract: No abstract text available
    Text: TOSHIBA RN4608 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4608 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 + 0.2 1.6 • • • • Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN4608 RN4608

    RN4603

    Abstract: No abstract text available
    Text: TOSHIBA RN4603 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4603 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8 -0.3 1.6-0.1 + 0.2 • • • •


    OCR Scan     		PDF RN4603 RN4603

    RN4605

    Abstract: No abstract text available
    Text: TOSHIBA RN4605 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4605 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT + 0.2 AND DRIVER CIRCUIT APPLICATIONS. 2.8-0.3 1.6 • • • • + 0.2 -


    OCR Scan     		PDF RN4605 RN4605

    RN4609

    Abstract: No abstract text available
    Text: TOSHIBA RN4609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8-0.3 + 0.2 1. 6 - 0.1 • Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN4609 RN4609

    33164

    Abstract: SG34164
    Text: LINFINITY- M ic ro e le c tro n ic s Inc. A Silicon G en eral SG33164/34164 C o m p an y MICROPOWER SENSING CIRCUIT DESCRIPTION FEATURES The SG33164 and the SG34164 are micropower undervoltage sensing circuits ideal for use in low power battery applications, in computer


    OCR Scan     		PDF SG33164/34164 SG33164 SG34164 150mil 150mil, MC33164/34164 33164

    Untitled

    Abstract: No abstract text available
    Text: Pöä@E yj Tr ©^ t o [l ( P -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum . 020 " (0.508mm) Backside Contact: 3,OCX) À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 508mm) 381mm) 0254mm) UC400, UC410, UC420, 2N2607, 2N2608, 2N2609, 2N2842,

    RN4602

    Abstract: No abstract text available
    Text: TOSHIBA RN4602 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) RN4602 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2.8-0.3 + 0.2 1 .6 - 0 .1 Including Two Devices in SM6 (Super Mini Type with 6 leads)


    OCR Scan     		PDF RN4602 RN4602

    2N2844

    Abstract: 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420
    Text: -Æ litra n Dev/ces. Inc. P -C H A N N E L J U N C T I O N FE T CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .02cr 0.508mm Backside Contact: 3,000 À Gold ASSEMBLY RECOMMENDATIONS .015" (0.381mm) It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.


    OCR Scan     		PDF 508mm) 381mm) 0254mm) 2N2844 2N2607 UC410 2N2609 2N2842 2N2608 Junction-FET UC400 UC420

    4034A

    Abstract: rca 4039ae 4034AE CM4011AE CD4000AE CM4000 CM4000AE CM4001AE CM4002AE CM4011A
    Text: Solidev Sem iconductors Integrated Circuits - Digital CMOS CM4000 Series CM OS Equivalent to R C A CD4000AE Series G E N E R A L D E S C R IP T IO N Com plem entary M O S circu its are norm ally made on an N-type substrate, w hich necessitates the use of a P-type well for N -channel devices


    OCR Scan     		PDF CM4000 CD4000AE 4044AE 4036AE 4048AE 4034A rca 4039ae 4034AE CM4011AE CM4000AE CM4001AE CM4002AE CM4011A

    a1u transistor

    Abstract: sed5031c
    Text: S-M 0 S SYSTEMS INC IDE D | 7^35ciO,:5 DDDDSTD M | PF221-03 feMdS&f CMOS 12 BIT THERMAL HEAD DRIVER #Built in 12bit static shift register #12bit latch circuits #Output control circuits and built in 12bit driver •DESCRIPTION The SED5031Coc is a low power CMOS 12bit thermal head driver. It contains a 12bit high speed shift


    OCR Scan     		PDF PF221-03 12bit SED5031Coc 12blt 8V/150mA a1u transistor sed5031c

    Ultrasonic amplifier schematic circuit

    Abstract: circuit diagram for simple IR receiver ultrasonic amplifier circuit diagram MRD821 MC3373 MC3373P envelope detector ic circuit diagram for simple IR transmitter high Frequency envelope detector 125 khz ultrasonic RECEIVER CIRCUIT
    Text: MOTOROLA Rem ote Control A m plifier/D etector The MC3373 is intended for application in infrared remote controls. It provides the high gain and pulse shaping needed to couple the signal from an IR receiver diode to the tuning control system logic. • High Gain Pre-Amp


    OCR Scan     		PDF MC3373 nPC1373 MC14497 MLED81 MRD821 b3b72S3 MC3373 Ultrasonic amplifier schematic circuit circuit diagram for simple IR receiver ultrasonic amplifier circuit diagram MC3373P envelope detector ic circuit diagram for simple IR transmitter high Frequency envelope detector 125 khz ultrasonic RECEIVER CIRCUIT

    BSN3005

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor BSN3005 FEATURES PINNING - SOT23 • High speed switching • No secondary breakdown • Direct interface to C-MOS, TTL etc. PIN SYMBOL 1 2 3 g DESCRIPTION gate s source


    OCR Scan     		PDF BSN3005 711002b G11DD42 MBC846 7110flEb BSN3005

    Untitled

    Abstract: No abstract text available
    Text: <g> M O TO R O LA MC1741C Internally Compensated, High Performance Operational Amplifier OPERATIONAL AMPLIFIER T h e M C 1 7 4 1 C was designed for use as a summing amplifier, integrator, or amplifier with operating characteristics as a function of the external


    OCR Scan     		PDF MC1741C Mo700 b3fci72S3

    CM150DY-12E

    Abstract: VQE200 transistor FM E52 Gh737 BP107 Q026 ZMRN
    Text: bHE D • TETMbSl 000b73b S7fl «PRX CM150DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 powerex inc CM150DY-12E Dual IGBTMOD E-Series Module


    OCR Scan     		PDF 72cmb21 000b73b CM150DY-12E BP107, Amperes/600 CM150DY-12E VQE200 transistor FM E52 Gh737 BP107 Q026 ZMRN

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER


    OCR Scan     		PDF Tamtp25Â 0Q1Q354 001G35S

    NDS9410 equivalent

    Abstract: NDS9410
    Text: National ÆlÆ Semiconductor November 1993 NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, D M O S technology. This


    OCR Scan     		PDF NDS9410 LSD1130 bSD113D NDS9410 equivalent NDS9410

    Untitled

    Abstract: No abstract text available
    Text: PD‘91880 International I R Rectifier IRFP460A smpsmosfet HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V d ss 500V R d s (o n ) m a x 0.27£2 Id 20A Benefits • Low Gate Charge Qg results in Simple


    OCR Scan     		PDF IRFP460A AN1001) Cu310)

    Untitled

    Abstract: No abstract text available
    Text: Digital Attenuator, 15.5 dB, 5 Bit DC-2 GHz Features ^ * * *July AT-280 ’93 SO-16 • Attenuation 0.5 dB Steps to 15.5 dB • Temperature Stability ± 0.15 dB from -40°C to +85°C Typical • Ultra Low DC Power Consumption • Low Intermodulation Products, IP3: 43 dBm


    OCR Scan     		PDF AT-280 SO-16 16-LD AT-280.

    Untitled

    Abstract: No abstract text available
    Text: g MOTOROLA M C3450 Quad MTTL Com patible Line Receivers The MC3450 features four MC75107 type active pullup line receivers with the addition of a common three-state strobe input. When the strobe input is at a logic zero, each receiver output state is determined by the differential


    OCR Scan     		PDF C3450 MC3450 MC75107 MC3450 b3b7253