Edd 44
Abstract: DIODE ED
Text: 1733 Reader's Spreadspg189-328:1570 Reader's Spreadspg189-328 1/27/09 4:44 PM Page 1 PMS 300 neg. Black neg. ED X bidirectional esd suppressor EU features circuit protection • • • • (16kV) IEC 61000-4-2 rating Surface mount package High component density
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Spreadspg189-328
Spreadspg189-328
225mw
225mwage
8/20us
Edd 44
DIODE ED
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17800
Abstract: DIODE ED 26 5SDD If 8000 Vrrm 8000
Text: VRRM = 400 V IFAVM = 11350 A IFRMS = 17800 A IFSM = 85000 A VF0 = 0.74 V rF = 0.018 mΩ Ω Rectifier Diode 5SDD 0120C0400 Doc. No. 5SYA1159-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance
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0120C0400
5SYA1159-01
CH-5600
17800
DIODE ED 26
5SDD If 8000 Vrrm 8000
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17300A
Abstract: No abstract text available
Text: VRRM = 200 V IFAVM = 11000 A IFRMS = 17300 A IFSM = 85000 A VF0 = 0.75 V rF = 0.020 mΩ Ω Rectifier Diode 5SDD 0120C0200 Doc. No. 5SYA1157-01 Oct.00 • Optimized for high current rectifiers • Very low on-state voltage • Very low thermal resistance
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0120C0200
5SYA1157-01
Surfac200
CH-5600
17300A
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HLP30RG
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS lflE D • 44^205 H LP20RG,H LP30RG,H LP40RG OOl Gñl b G a A IA s ¡R ED r-HH 3 Description H LP20RG , HLP30RG and HLP40RG are GaAIAs infrared em itting diodes with single heterojunction structure. T hey offer a wide range of wavelength and out
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LP20RG
LP30RG
LP40RG
LP20RG
HLP30RG
HLP40RG
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BH45-704A
Abstract: BH 27 701A facon bd BH22-601A bl 44 704 facon facon bh 27 701 GB 44-706 facon bf facon VX230
Text: FACON 45E D • 345b503 OOOOOlù 5 « F C N FACON SEMICONDUCTEURS/SEMICONDUCTORS T-23-0\ m ouldings m ou lages Vr r m Types V V RMS re c o m m en d ed m ax (V) ■d on re sistive load s u r c h arg e résis tive *d s m / *fsm Ip per diode @ VR U se
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345b503
T-230\
CB-356
C8-350
345b2D3
CB-349
CB-350
BH45-704A
BH 27 701A
facon bd
BH22-601A
bl 44 704 facon
facon bh 27 701
GB 44-706
facon bf
facon
VX230
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THC-4413
Abstract: sj 2907 4148 diode diode st 4148 TRANSISTOR 4148 THC-2894 THC-5818 THC-2369 THC-2369A THC-2945
Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 1 0 0 % Probed Parameters TYPE D E S C R IP T IO N BVoo M in . Ic V o lts @ (mA) B V cto M in . Ic V o lts @ (mA) M jn. V o lts B V ebo *5 0 1 50 @ Ic
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THC-95
THC-2894
THC4258
THC-4258A
THC-A-20
THC-2944
THC-2945
THC-4413
sj 2907
4148 diode
diode st 4148
TRANSISTOR 4148
THC-5818
THC-2369
THC-2369A
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im 308-c
Abstract: ma47047
Text: M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass o r Silicon D ioxide Passivation H erm etically Sealed CERMACHIP Design Fast Speed, Low Loss M icrowave Chips A ttenuator Chips Voltage Ratings to 1500 Volts W ide Range of PIN Characteristics
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MIL-STD883,
im 308-c
ma47047
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1N4474
Abstract: 4661N 1N1492 1N44B 1N4460 1N4471 1N4479
Text: 1N 4460 thru 1N4496 and 1N6485 thru 1N6491 Microisemi Corp. $ The diQite SC O TTSD A LE , A Z ☆JANS* 1.5 WATT G LASS ZEN ER DIODES FEATURES • Microminiature package. • High perform ance characteristics. • Stable operation at temperatures to 200°C.
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1N4496
1N6485
1N6491
MIL-S-19500/406.
1N4460
1N4474
4661N
1N1492
1N44B
1N4471
1N4479
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5082-2565
Abstract: hp 2817 hp 5082 2207 S3H 02 diode U1Z 07 u1z 99 hp 5082 2817 5082-2500 5082-2711 5082-2766
Text: COMPONENTS 5082 -2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6 5082 - 2 7 9 4 /9 5 SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS
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Untitled
Abstract: No abstract text available
Text: Series 50-170 A m p * DIODE* 9CRDIODE Modules High Thermal Efficiency These circuits provide complete power control in a single package, utilizing high thermal efficiency to assure long life and reliable performance. Twelve standard models provide 2500 Vrms
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E72445)
EFD02CF
D-66687
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MA4P709-150
Abstract: UHF Phase Shifter AG312 MA4PH451 MA47266 Microwave PIN diode phase shifter circulator 1N5767 MA4P709-985 pin diode limiter 3 ghz 1 watt
Text: Application Note M an A M P com pany Design With PIN Diodes AG312 By Gerald Hiller V 2.00 Introduction The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device w hose impedance, at these frequencies, is controlled by its DC
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AG312
MA4P709-150
UHF Phase Shifter
AG312
MA4PH451
MA47266
Microwave PIN diode
phase shifter circulator
1N5767
MA4P709-985
pin diode limiter 3 ghz 1 watt
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SW TACT SPST
Abstract: No abstract text available
Text: JUfaCim m a n A M P com pany Monolithic PIN Diode Switches MA4SW100, 200, 300 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1-18 G H z I 's a b le 1-26 G H z S l’ST. SP O T , U sa b le 1-20 G H z (S P 3 T ) K • In sertio n I.oss 1.2 d B to IK G H z
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MA4SW100,
MA4SW200
MA4SW300
SW TACT SPST
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Untitled
Abstract: No abstract text available
Text: an A M P com pany PIN Diode Chips V 2.00 Features • C E R M A C H IP glass or Silicon Dioxide Passivation o • Herm etically Sealed C E R M A C H IP Design • Fast Speed, Lo w Loss M icro w ave Chips • Attenuator Chips • Voltage Ratings to 1500 Volts
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MIL-STD883,
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Untitled
Abstract: No abstract text available
Text: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1
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MCC44
MCD44
MCC44-06Ã
MCC44-08Ã
MCC44-12io1
14lo1
MCC44-18io1
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Untitled
Abstract: No abstract text available
Text: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V 2.00 Case Style Features • Superior High Spued M icrow ave Switching Diode • 2-3 Nanosecond Sw itching W h e n D riven From T i l Logic • Capacitance as Low as 0.025 pF Specified at 10 G H z
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MA4GP900
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31140
Abstract: R K J 0822
Text: 40&CDM M an A M P com pany Monolithic PIN Diode Switches MA4SW100,200,300 V 2.00 Features • B ro a d b a n d P erfo rm a n ce: S p e cifie d 1 -18 G H z U sab le 1 -2 6 G H z SPST , S P D T U sab le 1 -20 G H z (S P 3 T ) • In se rtio n Loss 1 .2 d B to 18 G H z
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MA4SW100
MA4SW200
MA4SW300
31140
R K J 0822
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WR90 waveguide
Abstract: MA86571 WR-90 waveguide rf detector diode low power zero bias schottky diode zero bias schottky diode detector 10525
Text: Afe M an A M P com pany Microwave Detector 10.525 GHz MA86571 Features • Low Noise • High RF Rectification Efficiency • Rugged Construction • Zero Bias Schottky Diode • No Forw ard Bias Current is Required JL TO MATE WITH " UG-39U WR-90 WAVEGUIDE
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UG-39U
WR-90
MA86571
MA86571
WR90 waveguide
WR-90 waveguide
rf detector diode low power
zero bias schottky diode
zero bias schottky diode detector
10525
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5082-2350
Abstract: hp 2817 hpa 2350 5082-2817 5082-2200 diode hp 5082-2817
Text: Wlf^k HEWLETT 4447SÔH GGOTtiHb SB6 ^BHPA HEULETT-PACKAR] / CMPNTS D b lE PACKARD Schottky Barrier Diodes for Mixers and Detectors Technical Data 5082-2350/51 5082-2400/01 5082-2702/07 5082-2723/24 5082-2817/18 D IA M E T E R 1 63 064) 1 6 2 ( 060) Features
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4447S
5082-2350
hp 2817
hpa 2350
5082-2817
5082-2200
diode hp 5082-2817
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y NOVEMBERS SEM IC OND UCT OR S DS4179-4.0 DNB63 RECTIFIER DIODE APPLICATIONS • KEY PARAMETERS V RRM Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. IF av, 'fs m 1500V 4850A 57000A ■ Welding. ■ Battery Chargers.
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DS4179-4
DNB63
7000A
0200AD
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y NOVEMBERS SEM IC OND UCT OR S DS4180-4.0 DNB64 RECTIFIER DIODE APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. KEY PARAMETERS V RRM 3600V 2530A 'fs m 27000A I F a v , ■ Welding. ■ Battery Chargers.
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DS4180-4
DNB64
7000A
D0200AD.
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TIC 44 SCR
Abstract: No abstract text available
Text: MITEL MP03 XXX 190 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes O ctober 1992 version, 2.0 DS5099-3.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS5099-3
MP03/190
TIC 44 SCR
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Untitled
Abstract: No abstract text available
Text: M ITEL DSZ412SE Avalanche Diode SEMICONDUCTOR Supersedes Novem ber 1994, version 1.1 DS5107-2.0 FEATURES • Double Side Cooling. ■ High Surge Capability. ■ Avalanche Capability. Decem ber 1998 KEY PARAMETERS VRRM 4400V *f a v 230A *fs m 1500A APPLICATIONS
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DSZ412SE
DS5107-2
DS412SE44
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scr tic 106
Abstract: MTO thyristor HBP MITEL
Text: M ITEL MP03 XXX 330 Series Phase Control Dual SCR, SCR/Diode Modules SEMICONDUCTOR Supersedes January 1994 version, 3.2 DS4483-4.0 Decem ber 1998 FEATURES Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint
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DS4483-4
0600A
MP03/330
scr tic 106
MTO thyristor
HBP MITEL
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Untitled
Abstract: No abstract text available
Text: COAXIAL PIN DIODE ATTENUATOR ML 6650-100D SERIES MINIATURE ABSORPTIVE ATTENUATOR WITH LINEARISED DRIVER 1.0 TO 18.0 GHz FEATURES ♦ High Accuracy/Linearity ♦ Temperature Compensated ♦ Fast Switching Speed ♦ Miniature Outline ♦ Hermetically Sealed
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6650-100D
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