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    9CTI

    Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
    Text: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		PDF ED1784MS 250ns EDI784MSV EDI784MSV50BB EDI784MSV50FB EDI784MSV50B8 EDI784MSV506C 24/32Pin 300MN 3530im 9CTI S28B 9CTI 10 pin ic EC017 EDJ7

    Untitled

    Abstract: No abstract text available
    Text: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		PDF EDI784MS EDI784MSV 528-byte 250ms funI784MSV EDI784MSV50BB ED1784MSV50FB EDI784MSV50BB EDI7MMSV50BC 300MW

    J200M

    Abstract: No abstract text available
    Text: ^EDI ED I784M SV ELECIRONCDE9GIS&NC 4Megx8NAND Flash PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density


    OCR Scan     		PDF I784M EDI784MSV EDI784MSV50BB EDI784MSV50FB EDf784MSV50BB EDI784MSV50BC EDI784MSV50BI 050TYP. EDI784MSV J200M