Untitled
Abstract: No abstract text available
Text: WSX EDI441024C afCTROMC 0E9GNSINC. 1Megx4 Fast Page DRAM 1Megabit x 4 Dynamic RAM 5V, Fast Page Features The EDI441024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20
|
OCR Scan
|
PDF
|
100ns
EDI441024C
EDI441024C
015B1USA*
ED144W24C
|
Untitled
Abstract: No abstract text available
Text: ^EDL EDI441024C 1Megx4 Fast Page DRAM ELECTRONIC DESIGNS, INC 1 Megabit x 4 Dynamic RAM 5V, Fast Page The EDI441024C is a high performance, low power CMOS Dynamic Features RAM organized as 1 Megabit x 4. 1 Meg x 4 bit CMOS Dynamic During READ and WRITE cycles each bit is addressed through 20
|
OCR Scan
|
PDF
|
EDI441024C
EDI441024C
100ns
24/28Pin
1441024C
|