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    EDI8L32256V Search Results

    EDI8L32256V Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI8L32256V12AC White Microelectronics 12ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF
    EDI8L32256V15AC White Microelectronics 15ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF
    EDI8L32256V15AI White Microelectronics 15ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF
    EDI8L32256V17AC White Microelectronics 17ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF
    EDI8L32256V17AI White Microelectronics 17ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF
    EDI8L32256V20AC White Microelectronics 20ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF
    EDI8L32256V20AI White Microelectronics 20ns 3.3V power supply 256K x 32 8 megabit CMOS static RAM Original PDF

    EDI8L32256V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP


    OCR Scan     		ED/8L322S6V 25SKx32 256KX32 21060L 21062L TMS320LC31 MO-47AE EDI8L32256V EDI8L32256V20AC PDF

    256kx32

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
    Text: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		EDI8L32256V 256Kx32 21060L ADSP-21062L TMS320LC31 MO-47AE EDI8L32256V avai8L32256V15AC ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE Theta-J PDF

    EDI8L32128V

    Abstract: EDI8L32512V MO-47AE TMS320LC31
    Text: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to


    Original     		EDI8L32256V 256Kx32 256Kx32 EDI8L32256V TMS320LC31, 512Kx16. 512Kx48 256Kx24s EDI8L24256V) EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ED I8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS, INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static SRAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP


    OCR Scan     		I8L32256V 256Kx32 EDI8L32256V 21060L 21062L TMS320LC31 TMS320LC31, PDF

    cd 5151

    Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
    Text: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution


    Original     		EDI8L32256V 256Kx32 EDI8L32256V 21060L 21062L TMS320LC31 512Kx16BS2\ cd 5151 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 ADSP2106XL PDF

    EDI8L32512V-AC

    Abstract: 8L32512V
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V EDI8L32512V-AC 8L32512V PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AI EDI8L32128V15AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31 PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V15AI EDI8L32128V20AI ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    60MHZ

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    EDI8L32512V

    Abstract: No abstract text available
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.


    Original     		EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C PDF

    Untitled

    Abstract: No abstract text available
    Text: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access


    OCR Scan     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-210621Random MO-47AE) 128KX32CMOSHigh EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC PDF

    ADSP2106XL

    Abstract: No abstract text available
    Text: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,


    OCR Scan     		EDI8L32512V 512Kx32SftAMModuk 512KX32CMOSHigh EDI8L32512V sTMS320LC31 EDI8L32256V ECN8L32512V ADSP2106XL PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization


    Original     		EDI8L32128V 128KX32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC EDI8L32128V20AC ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: ^EDI EDI8L32128V ELECTRONIC DESIGNS. INC I 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM IFeatures The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access


    OCR Scan     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC ADSP-21060L EDI8L32512V MO-47AE PDF

    cd 5151

    Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
    Text: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution


    Original     		EDI8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 EDI8L32512C lineDQ02 cd 5151 ADSP-21060L ADSP-21062L MPC860 TMS320LC31 PDF

    ED18L32512V

    Abstract: ED18L325 ED18L32512 ED18L
    Text: X32 ASYNCHRONOUS FAMILY 64K128K256KAND512KX325V/3.3V are packaged in a 68 pin, 0.99" square PLCC package. Available in either a 5V or 3.3V version the x32 family provides access speeds of 10ns, 12ns, 15ns and 20ns. EDI’s x32 Asynchronous SRAM family is de­


    OCR Scan     		64K128K256KAND512KX325V/3 TMS320C3x TMS320C4x 64Kx32 128Kx32, 256Kx32 512Kx32. MO-47AE 65CxxAC ED18L32512V ED18L325 ED18L32512 ED18L PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC Preliminary 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, • ADSP-21060L SHARC


    OCR Scan     		I8L32512V 512Kx32 EDI8L32512V ADSP-21060L ADSP-21062L TMS320LC31 MPC860 sTMS320LC31 EDI8L32512V PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
    Text: ^EDI ED I8L32512V 512Kx32 SRAM Module ELECTRONIC DESIGNS. INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The ED I8L32512V is a high speed, 3.3V, 16 m egabit • ADSP-21060L SHARC SRAM. The device is available w ith access tim es of 12,


    OCR Scan     		EDI8L32512V 512Kx32 ADSP-21060L ADSP-21062L TMS320LC31 MPC860 M0-47AE EDI8L32512V 3512Kx32 ADSP-21060L ADSP-21062L EDI8L32128V MPC860 PDF

    Untitled

    Abstract: No abstract text available
    Text: W D ED I8L32128V I ELECTRONIC DESIGNS, INC I 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static density Static RAM. The device is available with access Analog SHARC External Memory Solution


    OCR Scan     		I8L32128V 128Kx32 EDI8L32128V ADSP-21060L 60MHz ADSP-21062L ADSP-21062L 128Kx32 PDF

    60MHZ

    Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
    Text: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V 60MHZ ADSP-21060L ADSP-21062L EDI8L32512V MO-47AE PDF

    ADSP-21060L

    Abstract: ADSP-21062L EDI8L32128V EDI8L32256C EDI8L32512V EDI8L3265C MO-47AE
    Text: EDI8L32128V T NO Features 128Kx32 CMOS High Speed Static RAM 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization with Minimal Additional Logic


    Original     		EDI8L32128V 128Kx32 ADSP-21060L ADSP-21062L MO-47AE) EDI8L32128V EDI8L32128V12AC EDI8L32128V15AC EDI8L32128V20AC ADSP-21060L ADSP-21062L EDI8L32256C EDI8L32512V EDI8L3265C MO-47AE PDF