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    EDO RAM 72PIN Search Results

    EDO RAM 72PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    27S13A/BEA Rochester Electronics LLC 27S13A - 2048-Bit (512X4) Bipolar RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    MC68A02CL Rochester Electronics LLC MC68A02 - Microprocessor With Clock and Oprtional RAM Visit Rochester Electronics LLC Buy

    EDO RAM 72PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to


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    PDF 72PIN 1Mx16 TS2MEDM326R TS2MEDM326R 32-bit 1Mx16-bit,

    Untitled

    Abstract: No abstract text available
    Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to


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    PDF 72PIN 1Mx16 TS2MEDM326R TS2MEDM326R 32-bit 1Mx16-bit,

    Untitled

    Abstract: No abstract text available
    Text: SM532X43085XLSX February 1996 Rev 0 SMART Modular Technologies SM532X43085XLSX 1MByte 256K x 32 CMOS, EDO, DRAM Module (Low Profile) General Description Features The SM532X43085XLSX is a high performance, EDO (Extended Data Out) 1-megabyte dynamic RAM module


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    PDF SM532X43085XLSX 72-pin, 256Kx16, 50/60/70ns 88WET

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


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    PDF M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0

    dq35 schematic diagram

    Abstract: edo ram schematic
    Text: SM53608408UMUUU December 7, 1998 SMART Modular Technologies SM53608408UMUUU 32MByte 8M x 36 CMOS, EDO DRAM Module General Description Features The SM53608408UMUUU is a high performance, 32-megabyte EDO (Extended Data Out) dynamic RAM module organized as 8M words by 36 bits, in a 72-pin,


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    PDF SM53608408UMUUU SM53608408UMUUU 32MByte 32-megabyte 72-pin, SM536084082MUUU SM536084084MUUU 32Mbyte dq35 schematic diagram edo ram schematic

    64mb edo dram simm

    Abstract: K4E160411C
    Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C


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    PDF M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA ^ 0* 17 2 40 OOHfiSDM ñbO • - THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3640F5BS/BSG is a 4,194,304 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­


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    PDF THM3640F5BS/BSG-60/70 THM3640F5BS/BSG TC5117405BSJ TC5117445BSJ DM16040595 THM3640F5BS/BSG

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


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    PDF THM328025BS/BS THM328025BS/BSG TC5117405BSJ 704mW THMxxxxxx-60) 074mW THMxxxxxx-70) DM32020695 M328025BS/BSG THM328025BS/BSG-6Q/70 TC5117405

    TC5118165B

    Abstract: TC5118165 thm322
    Text: TOSHIBA THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which


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    PDF THM3220C5BS/BSG-60/70 THM3220C5BS/BSG TC5118165BJ THMxxxxxx-60) 596mW THMxxxxxx-70) THM3220C5BS/BSG 89MAX. 11111m TC5118165B TC5118165 thm322

    TC5117405

    Abstract: No abstract text available
    Text: TOSHIBA THM3680G5BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for


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    PDF THM3680G5BS/BSG-60/70 THM3680G5BS/BSG TC5117405BSJ TC5117445BSJ 292mW THMxxxxxx-60) 584mW THMxxxxxx-70) D-100 DM32040695 TC5117405

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are


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    PDF THM328025BS/BSG-60/70 THM328025BS/BSG TC5117405BSJ 704mW DM32020695 THM328025BS/BSG 328025BS/BSG

    Untitled

    Abstract: No abstract text available
    Text: ^017240 TOSHIBA OOEÔMbM 354 THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which


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    PDF THM3210B5BS/BSG-60/70 THM3210B5BS/BSG TC5118165BJ 890mW THM3210B5BS/BSG-60) 575mW THM3210B5BS/BSG-70) S690Z0M

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which


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    PDF 00Bfl47b THM3220C5BS/BSG-60/70 THM3220C5BS/BSG TC5118165BJ 89MAX. THM3220C5BS/BSG 17EHfl

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which


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    PDF THM3210B5BS/BSG-60/70 3210B5BS/BSG 5118165BJ 3210B THM3210B5BS/BSG-60/70 M3210B5BS/BSG DM04020695

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which


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    PDF THM324005BS/BSG60/70 THM324005BS/BSG TC5117405BSJ 620mW THMxxxxxx-60) 990mWC h9200 /09-Dsa/sas00fezei/\iHi

    thm3640*5

    Abstract: No abstract text available
    Text: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for


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    PDF THM3640F5BS/BSG-60/70 3640F5BS/BSG 5117405BSJ 5117445BSJ 198mW THMxxxxxx-60) 489mW THM364QF5BS/BSG-60A70 DM16040595 THM3640F5BS/BSG thm3640*5

    STI322004AD2-60SVG

    Abstract: 0052M edo ram 72pin
    Text: STI322004AD2-60SVG 72-PIN SO-DIMMS 2M X 32 Bits EDO DRAM SO-DIMM FEATURES GENERAL DESCRIPTION Performance range: - The Simple Technology STI322004AD2-60SVG is a 2M x 32 bits EDO Dynamic RAM high density memory module. The Simple Technology STI322004AD2-60SVG consist of four CMOS 1M


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    PDF STI322004AD2-60SVG 72-PIN STI322004AD2-60SVG 44-pin 0052M edo ram 72pin

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2B V7282B-60JG-S 16MByte 2M x 72 CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized


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    PDF V7282B-60JG-S 16MByte EDC2BV7282B-60JG-S 16-megabyte 168-pins, MB81V17805B-60PJ 74ABT16244 72-pin 144-pin 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES GENERAL DESCRIPTION The Samsung KMM53680 1 05BK is a 8M bit x 36 Dynamic RAM high density memory module. The


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    PDF KMM5368005BK/BKG KMM5368105BK/BKG KMM5368105BK/BKG 8Mx36 KMM53680 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DENSE-PAC vi i c R o r i: sys 512 Megabit CMOS EDO DRAM ms DPED16MX32RW PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPED16MX32RW is the 16 Meg x 32 EDO Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed


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    PDF DPED16MX32RW DPED16MX32RW 72-pin 30A173-11

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EOB1UV641 1/4 B-60TG-S 8MByte ( I M x 64) CMOS EDO DRAM Module -3.3V General Description The EOB1UV641 (1/4)B-60TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized


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    PDF EOB1UV641( B-60TG-S EOB1UV641 B-60TG-S 144-pin, MB81V1 165B-60PFTN

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS


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    PDF KMM5362205AW/AWG KMM5362205AW/AWG 2Mx36 KMM5362205AW 1Mx16 42-pin KMM5362205AW cycles/16ms 24-pin

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized


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    PDF EDC2UV7282B- 16MByte EDC2UV7282B-60 16-megabyte 168-pin, MB81V17805B-60 72-pin 144-pin 168-pin 200-pin

    tr sc 1056

    Abstract: No abstract text available
    Text: 1024 Megabit CMOS EDO DRAM DENSE-PAC vi i c R osys DPED32MX32RW r i: m s PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPED32MX32RW is the 32 Meg x 32 EDO Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed


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    PDF DPED32MX32RW DPED32MX32RW 72-pin DQ16N 30A174-01 tr sc 1056