Untitled
Abstract: No abstract text available
Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to
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72PIN
1Mx16
TS2MEDM326R
TS2MEDM326R
32-bit
1Mx16-bit,
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Untitled
Abstract: No abstract text available
Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to
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72PIN
1Mx16
TS2MEDM326R
TS2MEDM326R
32-bit
1Mx16-bit,
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Untitled
Abstract: No abstract text available
Text: SM532X43085XLSX February 1996 Rev 0 SMART Modular Technologies SM532X43085XLSX 1MByte 256K x 32 CMOS, EDO, DRAM Module (Low Profile) General Description Features The SM532X43085XLSX is a high performance, EDO (Extended Data Out) 1-megabyte dynamic RAM module
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SM532X43085XLSX
72-pin,
256Kx16,
50/60/70ns
88WET
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C
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M53640812CW0/CB0
M53640812CW0/CB0
M53640812C
8Mx36bits
M53640812C
24-pin
28-pin
72-pin
M53640812CW0
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dq35 schematic diagram
Abstract: edo ram schematic
Text: SM53608408UMUUU December 7, 1998 SMART Modular Technologies SM53608408UMUUU 32MByte 8M x 36 CMOS, EDO DRAM Module General Description Features The SM53608408UMUUU is a high performance, 32-megabyte EDO (Extended Data Out) dynamic RAM module organized as 8M words by 36 bits, in a 72-pin,
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SM53608408UMUUU
SM53608408UMUUU
32MByte
32-megabyte
72-pin,
SM536084082MUUU
SM536084084MUUU
32Mbyte
dq35 schematic diagram
edo ram schematic
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64mb edo dram simm
Abstract: K4E160411C
Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C
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M53640412CW0/CB0
M53640412CW0/CB0
M53640412C
4Mx36bits
M53640412C
24-pin
28-pin
72-pin
M53640412CW0
64mb edo dram simm
K4E160411C
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Untitled
Abstract: No abstract text available
Text: TOSHIBA ^ 0* 17 2 40 OOHfiSDM ñbO • - THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3640F5BS/BSG is a 4,194,304 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem
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THM3640F5BS/BSG-60/70
THM3640F5BS/BSG
TC5117405BSJ
TC5117445BSJ
DM16040595
THM3640F5BS/BSG
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TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BS
THM328025BS/BSG
TC5117405BSJ
704mW
THMxxxxxx-60)
074mW
THMxxxxxx-70)
DM32020695
M328025BS/BSG
THM328025BS/BSG-6Q/70
TC5117405
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TC5118165B
Abstract: TC5118165 thm322
Text: TOSHIBA THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
THMxxxxxx-60)
596mW
THMxxxxxx-70)
THM3220C5BS/BSG
89MAX.
11111m
TC5118165B
TC5118165
thm322
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TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM3680G5BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The THM3680G5BS/BSG is a 8,388,608 words by 36 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 16 pcs of TC5117405BSJ and 2 pcs of TC5117445BSJ on the printed circuit board. This module is optimized for
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THM3680G5BS/BSG-60/70
THM3680G5BS/BSG
TC5117405BSJ
TC5117445BSJ
292mW
THMxxxxxx-60)
584mW
THMxxxxxx-70)
D-100
DM32040695
TC5117405
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Untitled
Abstract: No abstract text available
Text: TOSHIBA *i[H724ô 00 2ÛS17 HIT THM328025BS/BSG-60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BSG-60/70
THM328025BS/BSG
TC5117405BSJ
704mW
DM32020695
THM328025BS/BSG
328025BS/BSG
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Untitled
Abstract: No abstract text available
Text: ^017240 TOSHIBA OOEÔMbM 354 THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3210B5BS/BSG is a 1,048,576 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 2 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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THM3210B5BS/BSG-60/70
THM3210B5BS/BSG
TC5118165BJ
890mW
THM3210B5BS/BSG-60)
575mW
THM3210B5BS/BSG-70)
S690Z0M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which
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00Bfl47b
THM3220C5BS/BSG-60/70
THM3220C5BS/BSG
TC5118165BJ
89MAX.
THM3220C5BS/BSG
17EHfl
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Untitled
Abstract: No abstract text available
Text: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which
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THM3210B5BS/BSG-60/70
3210B5BS/BSG
5118165BJ
3210B
THM3210B5BS/BSG-60/70
M3210B5BS/BSG
DM04020695
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Untitled
Abstract: No abstract text available
Text: TOSHIBA •^0^7240 Q O E fiM TO 4Mb THM324005BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM324005BS/BSG is a 4,194,304 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem bled with 8 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which
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THM324005BS/BSG60/70
THM324005BS/BSG
TC5117405BSJ
620mW
THMxxxxxx-60)
990mWC
h9200
/09-Dsa/sas00fezei/\iHi
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thm3640*5
Abstract: No abstract text available
Text: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for
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THM3640F5BS/BSG-60/70
3640F5BS/BSG
5117405BSJ
5117445BSJ
198mW
THMxxxxxx-60)
489mW
THM364QF5BS/BSG-60A70
DM16040595
THM3640F5BS/BSG
thm3640*5
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STI322004AD2-60SVG
Abstract: 0052M edo ram 72pin
Text: STI322004AD2-60SVG 72-PIN SO-DIMMS 2M X 32 Bits EDO DRAM SO-DIMM FEATURES GENERAL DESCRIPTION Performance range: - The Simple Technology STI322004AD2-60SVG is a 2M x 32 bits EDO Dynamic RAM high density memory module. The Simple Technology STI322004AD2-60SVG consist of four CMOS 1M
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STI322004AD2-60SVG
72-PIN
STI322004AD2-60SVG
44-pin
0052M
edo ram 72pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2B V7282B-60JG-S 16MByte 2M x 72 CMOS EDO DRAM Module -3.3 V (ECC), Buffered General Description The EDC2BV7282B-60JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V7282B-60JG-S
16MByte
EDC2BV7282B-60JG-S
16-megabyte
168-pins,
MB81V17805B-60PJ
74ABT16244
72-pin
144-pin
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM5368005BK/BKG KMM5368105BK/BKG DRAM MODULE KMM5368005BK/BKG & KMM5368105BK/BKG Fast Page with EDO Mode 8Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS EDO DRAM FEATURES GENERAL DESCRIPTION The Samsung KMM53680 1 05BK is a 8M bit x 36 Dynamic RAM high density memory module. The
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KMM5368005BK/BKG
KMM5368105BK/BKG
KMM5368105BK/BKG
8Mx36
KMM53680
24-pin
28-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC vi i c R o r i: sys 512 Megabit CMOS EDO DRAM ms DPED16MX32RW PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPED16MX32RW is the 16 Meg x 32 EDO Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed
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DPED16MX32RW
DPED16MX32RW
72-pin
30A173-11
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EOB1UV641 1/4 B-60TG-S 8MByte ( I M x 64) CMOS EDO DRAM Module -3.3V General Description The EOB1UV641 (1/4)B-60TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized
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EOB1UV641(
B-60TG-S
EOB1UV641
B-60TG-S
144-pin,
MB81V1
165B-60PFTN
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362205AW/AWG KMM5362205AW/AWG Fast Page with EDO Mode 2Mx36 DRAM SIMM, 5V, 1K Refresh using 4M Quad CAS EDO DRAM G ENERAL DESCRIPTIO N FEATURES The Samsung KMM5362205AW is a 2M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5362205AW consists of four CMOS
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KMM5362205AW/AWG
KMM5362205AW/AWG
2Mx36
KMM5362205AW
1Mx16
42-pin
KMM5362205AW
cycles/16ms
24-pin
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Untitled
Abstract: No abstract text available
Text: cP ÏITSIJ I A M. July 1997 Revision 1.0 data sheet EDC2UV7282B- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC2UV7282B-60(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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EDC2UV7282B-
16MByte
EDC2UV7282B-60
16-megabyte
168-pin,
MB81V17805B-60
72-pin
144-pin
168-pin
200-pin
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tr sc 1056
Abstract: No abstract text available
Text: 1024 Megabit CMOS EDO DRAM DENSE-PAC vi i c R osys DPED32MX32RW r i: m s PRELIMINARY PIN-OUT DIAGRAM DESCRIPTION: The DPED32MX32RW is the 32 Meg x 32 EDO Dynamic RAM module in the family of modules that utilize the space saving TSOP technology. The module is constructed
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DPED32MX32RW
DPED32MX32RW
72-pin
DQ16N
30A174-01
tr sc 1056
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