UX7LSeD
Abstract: 180NM nmos NEC 180NM CMOS edram nec 180NM edram cmos logic 90nm 0.35uM STI 180NM NEC NEC SRAM
Text: DRAM混載技術のご紹介 2007年10月16日 NECエレクトロニクス株式会社 ARM Forum 2007発表資料 Copyright NEC Electronics Corporation Agenda z eDRAM導入のメリット z NECエレクトロニクス eDRAMの紹介 z NECエレクトロニクス eDRAMの特長
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UX7LSeD
Abstract: edram edram macro hfo2 edram nec Ta2O5 55nm
Text: 55-nanometer eDRAM Technology Optimizes Performance and Power Characteristics Technology Backgrounder September 2006 The industry’s first embedded DRAM eDRAM for the 55-nanometer (nm) technology node uses new materials configured in an innovative way to achieve the performance and power
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55-nanometer
55-nanometer
UX7LSeD
edram
edram macro
hfo2
edram nec
Ta2O5
55nm
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edram
Abstract: No abstract text available
Text: r^pM TRO N This application note is a collection of design suggestions based upon common errors made during the development of EDRAM systems. Inttialaation To assure reliable operation of the EDRAM, please initialize promptly on power-up. This initialization requires eight /F refresh
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545-FRAM.
edram
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dram verilog model
Abstract: "embedded dram" 438B TC260 TC280 TC280C TOSHIBA TC260 70409 "embedded dram" and Graphics and Toshiba
Text: Embedded DRAM Cores PRODUCT GUIDE Embedded DRAM Cores With high memory data transfer rates and low power consumption, EDRAM SoCs Enable High-Performance and High-Value-Added Systems. EDRAM SoCs Also Reduce System Board Area. -SoCs with Synchronous DRAMs and FastThe ever-increasing design complexity and the drive for system-on-chips
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45125C-0203
dram verilog model
"embedded dram"
438B
TC260
TC280
TC280C
TOSHIBA TC260
70409
"embedded dram" and Graphics and Toshiba
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Untitled
Abstract: No abstract text available
Text: Enhanced Memory Systems Inc. DM512K32SmM512K36STBMultibankEDO 512Kbx 32/512Kbx 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four Actives Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page
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DM512K32SmM512K36STBMultibankEDO
512Kbx
32/512Kbx
DM512K36ST6
512Kx
44-pin
DM2213
DM512K32
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Untitled
Abstract: No abstract text available
Text: «5 Enhanced Memory Systems Inc. DM2240Multibank EDO EDRAM 4Mb x 1 Enhanced Dynamic RAM ProductSpecification Features • 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2240Multibank
256-byte
Oper0J2-121
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Untitled
Abstract: No abstract text available
Text: DM2203/2213 Multibank EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2203/2213
512Kb
256-byte
DM2203T
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A09t
Abstract: CQX 89
Text: DM2223/2233 Multibank Burst EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2223/2233
512Kb
DM2223T
A09t
CQX 89
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gigabyte 945
Abstract: D0-35 30 pin 9-bit simm memory
Text: Enhanced Memory Systems Inc. Features DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Architecture The DM512K36ST6 achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a
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DM512K32ST6/DM512K36ST6
512Kb
32/512Kb
DM512K36ST6
44-pin
DM2213
DM512K32
DM512K36ST6
gigabyte 945
D0-35
30 pin 9-bit simm memory
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Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiy Systems Inc. DM512K32ST6/DM512K36ST6 Multibank EDO 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four stive s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page
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DM512K32ST6/DM512K36ST6
512Kb
32/512Kb
512K36ST6-
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U1615
Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
64/1Mb
16Kbytes
168BD5-TR
DM1M72DT6
72-bit
U1615
u1515
U24A
U20-16
U217
U1613
U23C-36
U16-18
U17-16
transistor BMO 123
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Untitled
Abstract: No abstract text available
Text: DM2242/2252 EDRAM Multibank EDO 1Mb x 4 Enhanced Dynamic RAM P55Enhanced Æ È IVfemoiySystems ix. Product Specification Features •8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Mu iti bank Cache ■Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2242/2252
P55Enhanced
256-byte
DM2252)
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D0-35
Abstract: No abstract text available
Text: DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Enhanced Memory Systems Inc. Product Specification Features Architecture The DM512K36ST achieves 512K x 36 density by mounting five 512K x 8 EDRAMs, packaged in 44-pin plastic TSOP-II packages, on a multi-layer substrate. Four
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DM512K32ST/DM512K36ST
512Kb
32/512Kb
DM512K36ST
44-pin
DM2213
DM512K32
DM2203T-XX,
DM2213T-XX,
DM512K32ST)
D0-35
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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edram
Abstract: No abstract text available
Text: Estimating EDRAM Operating Power ^ M T T R O fM random read current with CMOS operating levels is shown in Figure itroduction I I I k formula for estimating current is nns/opcraling cvcle time * I he Rainlron enhanced DRAM rii 'ihnu"- ini' linn lions ot a Iasi
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205mA
33MHz486Systems
25MHz
edram
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486dx isa bios opti
Abstract: 495SLC cyrix 486 486DX2 FPGA Cache Controller for the 486DX 486DX2s instructions 486DX2 486DX MEMORY CONTROLLER Intel486DX2 ifx780
Text: r^ p M lR O N Summary Ramtron’s EDRAM is the ideal memory for high performance PC systems. • No Wait States During Burst Read Hit and Write Cycles ■ Only One Wait State During a Burst Read Miss Cycle ■ Single Chip FPGA-based Controller Solution Introduction
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Intel486DX2
50MHz&
66MHzMicroprocessors
33MHz
72-pin
486dx isa bios opti
495SLC
cyrix 486
486DX2
FPGA Cache Controller for the 486DX
486DX2s
instructions 486DX2
486DX MEMORY CONTROLLER
ifx780
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CQX 86
Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DTE/DM1M72DTE
64/1Mb
16Kbytes
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U1615
U2-14
U217
u416
CQX 89
CQv 89
512kx8 dram simm
u332
u1515
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Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiySuterns be. DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 12 Enhanced DRAM DIMM Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multi bank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
64/512Kb
72-bit
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Untitled
Abstract: No abstract text available
Text: H Enhanced DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM IVfemoiy Suterns be. Product Specification Features • 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page ■ Fast 4Mbit DRAM Array for 30ns Access to Any New Page ■ Write Posting Register for 12ns Random Writes and Burst Writes
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DM2200
256-byte
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Untitled
Abstract: No abstract text available
Text: DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes
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DM2200
256-byte
no-wait32)
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Untitled
Abstract: No abstract text available
Text: Enhanced IVfemoiy Systems be. DM512K32ST/DM512K36ST 512Kb x 32/512Kb x 36 EDRAM SIMM Product Specification Features A rchitecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Four s tiv e s Pages Multibank Cache ■ Fast DRAM Array for 30ns Access to Any New Page
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DM512K32ST/DM512K36ST
512Kb
32/512Kb
JEDEC512Kx
DM2203T-XX,
DM2213T-XX,
DM512K32ST)
R6-R10
100KS2
DM512K36ST-
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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PJ 52
Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
DM1M72DT6
72-blt
PJ 52
U1615
U18-18
u1515
U23D-43
U176
U21-18
u1818
L115
U218
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