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    EEPROM RETENTION BAKE SCREENING Search Results

    EEPROM RETENTION BAKE SCREENING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MK712SILFTR Renesas Electronics Corporation Touch Screen Controller Visit Renesas Electronics Corporation
    MK712RLF Renesas Electronics Corporation Touch Screen Controller Visit Renesas Electronics Corporation
    MK712RLFTR Renesas Electronics Corporation Touch Screen Controller Visit Renesas Electronics Corporation
    MK712SLF Renesas Electronics Corporation Touch Screen Controller Visit Renesas Electronics Corporation
    MK712SLFTR Renesas Electronics Corporation Touch Screen Controller Visit Renesas Electronics Corporation

    EEPROM RETENTION BAKE SCREENING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RAD6000

    Abstract: NA-GSFC-2005-04 HCN58C1001 EEPROM retention testing EEPROM retention bake screening GSFC SCS750 RAD6000 processor architecture 79LV0408RPFE-20 28C011TRPFS-12
    Text: Review of GSFC NASA Advisory NA-GSFC-2005-04 Part Types: Models: Manufacturer: EEPROM All EEPROM Models Maxwell Technologies Lot Date Codes: All LDC’s Document: 1009322 Revision: Date: 2 March 24, 2006 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |


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    NA-GSFC-2005-04 RAD6000 NA-GSFC-2005-04 HCN58C1001 EEPROM retention testing EEPROM retention bake screening GSFC SCS750 RAD6000 processor architecture 79LV0408RPFE-20 28C011TRPFS-12 PDF

    AT28HC64B-W

    Abstract: AT28BV64B-W AT28C16-W M2010 M5004
    Text: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance:


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    0554D AT28HC64B-W AT28BV64B-W AT28C16-W M2010 M5004 PDF

    EEPROM retention testing

    Abstract: flash "high temperature data retention" mechanism ANH005 P1005 flash Activation Energy
    Text: Hybrid Memory Products Ltd Floating Gate Memory Arrays Retention Issues Introduction This document reviews the nature of Data Retention, and presents approaches to its specification and verification based upon procedures defined in the following IEEE publication:


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    P1005 150oC 32LCC) EEPROM retention testing flash "high temperature data retention" mechanism ANH005 flash Activation Energy PDF

    QNEE9801

    Abstract: stmicroelectronics traceability
    Text: QNEE9801 QUALITY NOTE High Reliability Certified Flow HRCF The High Reliability Certified Flow has been developed by STMicroelectronics for sensitive applications, such as security automotive and medical applications, that need a very high level of reliability (with the


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    QNEE9801 QNEE9801 stmicroelectronics traceability PDF

    EEPROM Die Products

    Abstract: Atmel AT28C256-DWFM19104 EEPROM retention bake screening AT28HC256-DWFM19104 AT28BV256-DWF AT28BV64B-DWF AT28C16-DWF M2010 M5004
    Text: Features • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation – Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: • 104 Cycles


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    0554F EEPROM Die Products Atmel AT28C256-DWFM19104 EEPROM retention bake screening AT28HC256-DWFM19104 AT28BV256-DWF AT28BV64B-DWF AT28C16-DWF M2010 M5004 PDF

    sugar centrifuge

    Abstract: EEPROM retention bake screening
    Text: Product Quality A CORPORATE COMMITMENT Microchip Technology Inc. has evolved a culture where a commitment to quality is an integral part. By empowering every employee to be responsible for the quality of their work, the entire corporation is involved in the


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    DS00047G-page sugar centrifuge EEPROM retention bake screening PDF

    flash "high temperature data retention" mechanism

    Abstract: EEPROM retention testing BEST BIOS PROGRAMMING AND DATA FOR EEPROM EEPROM retention bake screening SST superflash
    Text: Reliability Considerations for Reprogrammable Nonvolatile Memories Technical Paper 1.0 INTRODUCTION When acquiring a microcircuit, many considerations above and beyond the purchase price are important. Among these are quality, reliability, delivery, service, and


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    BEST BIOS PROGRAMMING AND DATA FOR EEPROM

    Abstract: TRANSISTOR A117 flash "high temperature data retention" mechanism EEPROM retention testing DSASW0016486
    Text: Reliability Considerations for Reprogrammable Nonvolatile Memories Reliability Considerations for Reprogrammable Nonvolatile Memories INTRODUCTION When acquiring a microcircuit, many considerations above and beyond the purchase price are important. Among these are quality, reliability, delivery, service, and product


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    S72021-00-000 BEST BIOS PROGRAMMING AND DATA FOR EEPROM TRANSISTOR A117 flash "high temperature data retention" mechanism EEPROM retention testing DSASW0016486 PDF

    24XX256

    Abstract: DK-2750 PIC18LF4320
    Text: TB072 FLASH Memory Technology: Considerations for Application Design Author: Rodger Richey Microchip Technology Inc. INTRODUCTION Many times, choosing a FLASH memory device is driven by which manufacturer has the cheapest offering. Regardless of its use as a stand-alone device or as


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    TB072 DK-2750 D-85737 DS91072A-page 24XX256 PIC18LF4320 PDF

    wafer incoming

    Abstract: EEPROM retention bake screening
    Text: Configuration Elements & Reliability June 1996, ver. 3 Data Sheet Introduction Altera’s broad range of programmable logic devices PLDs incorporates four types of configuration elements: EPROM, EEPROM, FLASH, and SRAM. To ensure the highest level of device performance and reliability,


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    15-month wafer incoming EEPROM retention bake screening PDF

    Untitled

    Abstract: No abstract text available
    Text: Configuration Elements & Reliability June 1996, ver. 3 Data Sheet Introduction Altera’s broad range of programmable logic devices PLDs incorporates four types of configuration elements: EPROM, EEPROM, FLASH, and SRAM. To ensure the highest level of device performance and reliability,


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    15-month PDF

    atmel 438

    Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237
    Text: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: 104 Cycles


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    0554C 06/98/xM atmel 438 Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237 PDF

    28C513

    Abstract: qml-38535 28C512 5962-E079-07
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with NOR 5962-R114-92. glg 92-01-22 Michael A. Frye B Changes in accordance with NOR 5962-R160-98. glg 98-08-06 Raymond Monnin C Boilerplate update and part of five year review. tcr


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    5962-R114-92. 5962-R160-98. 28C513 qml-38535 28C512 5962-E079-07 PDF

    AC243003

    Abstract: 24c16 EEPROM sample code 93XX66A 24C16 serial eeprom 24C16 24LCXX 25LCXX AEC-Q100 MICROWIRE eeprom interface PIC 24C16
    Text: Automotive Memory Products Serial EEPROM Powered for Automotive www.microchip.com/memory Microchip Serial Memory Products Microchip Technology has developed industry-leading processes for each step in the design, manufacturing and testing phases of its serial EEPROMs, and has become one of the most respected leaders in supply of these devices to the automotive


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    25LCXX 24LCXX 93LCXX 11LCXX P-8870 DS22078C DS22078D* AC243003 24c16 EEPROM sample code 93XX66A 24C16 serial eeprom 24C16 24LCXX 25LCXX AEC-Q100 MICROWIRE eeprom interface PIC 24C16 PDF

    Untitled

    Abstract: No abstract text available
    Text: PS-AT28C010 revision C MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-Bit PARALLEL EEPROM, MONOLITHIC SILICON Revision Written by Approved by Date C S.JAMES C. FERRE 03/01/08 1/24 PS-AT28C010 Rev C DOCUMENTATION CHANGE NOTICE Date of update Revision letter


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    PS-AT28C010 AT28C010 PDF

    ATMEL 0828

    Abstract: at28c010 ATMEL Packing method EEPROM retention bake screening AT28C010-12DK-MQ AT28C010-12DK-SV
    Text: PS-AT28C010 revision C MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K x 8-Bit PARALLEL EEPROM, MONOLITHIC SILICON Revision Written by Approved by Date C S.JAMES C. FERRE 03/01/08 1/24 PS-AT28C010 Rev C DOCUMENTATION CHANGE NOTICE Date of update Revision letter


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    PS-AT28C010 AT28C010 ATMEL 0828 ATMEL Packing method EEPROM retention bake screening AT28C010-12DK-MQ AT28C010-12DK-SV PDF

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION NOTE QUALITY AND RELIABILITY INFORMATION by the Micro Divisions INTRODUCTION We think that maintaining an optimal quality level is very important but we also believe that our customers contribute to the quality chain when they handle or program


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    PDF

    EPROM retention bake

    Abstract: mass flow meter evaluation kit
    Text: APPLICATION NOTE QUALITY AND RELIABILITY INFORMATION by the Micro Divisions INTRODUCTION We think that maintaining an optimal quality level is very important but we also believe that our customers contribute to the quality chain when they handle or program our MCU devices This


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    CHAINAN902/0299 EPROM retention bake mass flow meter evaluation kit PDF

    development trends in car manufacture

    Abstract: EPROM retention bake VR02105B
    Text: APPLICATION NOTE QUALITY AND RELIABILITY INFORMATION by the Micro Divisions INTRODUCTION We think that maintaining an optimal quality level is very important but we also believe that our customers contribute to the quality chain when they handle or program


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: EEPROM Reliability The reliability of AMD's NS-18 process used in the fabrication of 64K EEPROMs is described in this report. The reliability monitors used at AMD were designed to predict the future operating life results by accelerat­ ing failure rates. The monitors include data from endur­


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    NS-18 Am2864AE/BE Am2864B PDF

    transistor 2002b

    Abstract: No abstract text available
    Text: Configuration Elements & Reliability Introduction Altera's broad range of program m able logic devices incorporates four types of configuration elements: EPRO M , EEPROM , FLASH, and SRAM . To ensure the highest level of device perform ance and reliability, Altera


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    PDF

    smd UJ

    Abstract: CDFP4-F28 GDIP1-T28 SMD MARKING CODE sdp
    Text: DATE DESCRIPTION LTR APPROVED YR-Ho-PA A A d d e d case ou t l i n e le t t e r U t o the drawing. Re m o v e d E S D S r e q u i r e m e n t s froit; drawing. E d i t o r i a l c h an ge s th roughout. 90 -0 1- 26 ' M. A. Frye B R e m o v e d "D e l a y to n e x t wr i t e " \tDVWL, t DV£L) test


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    BUL-103. MIL-BUL-103 00X07^ smd UJ CDFP4-F28 GDIP1-T28 SMD MARKING CODE sdp PDF

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR APPROVED DESCnPTWN REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 11 14 12 13 15 16 17 18 19 PMCN/A STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON


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    DESCIVPT10N 74HJW40911 5962-E944 1/Oof02JX 5962-8867602LX 5962-8867602XX 1FN41 1AT28HC16L-70DM/88 PDF

    4431B

    Abstract: smd marking 4431b 60395 5962-38267 28C010 qml-38535
    Text: _ REVISIONS_ _ LTR_ DESCRIPTION_ DATE YR-HO-PA _ APPROVED A Add packages T and W. Add vendor CAGE 60395 as 93-06-29 M. A. Frye source of supply. Increase data retention to


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    000002e] 4431B smd marking 4431b 60395 5962-38267 28C010 qml-38535 PDF