HY-3189
Abstract: 2000C electrical egg date sheet thyratron tube operation thyratron tube thyratron SCHEMATIC 5kv pulse driver thyratron egg
Text: n JEG G ELECTRO-OPTICS DIVISION * EG&G ELECTRO-OPTICS DIVISION Tel 508 745-3200 or toll-free (800)950-3441 * USA * SALEM, MA 01970 35 CONGRESS STREET Fax (508)745-1451 Electronic Switch Department HY-3189 March 15, 1995 (Notes 15 & 16) TRIGGERING REQUIREMENTS
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Original
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HY-3189
HY-3189
2000C
electrical egg date sheet
thyratron tube operation
thyratron tube
thyratron
SCHEMATIC 5kv pulse driver
thyratron egg
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gaseous lasers
Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using
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OCR Scan
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3030blD
C86093E
200ns
910nm
C86093E
900to
gaseous lasers
C86083E
910nm
laser rca
rca 019
1200cu
general electric
laser 910nm
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SIECOR Fiber Optic cable
Abstract: siecor C30617E EG*G Optoelectronics Siecor 62.5 C30986E C86081E-13 C86081E-14 1300 nm LEDs SIECOR Fiber Optics
Text: E fi 8. G / C A N A D A / O P T O E L E K 4?E T> 3030bl0 OODOET? 3 I CANA t-fl-O l OPTOELECTRONICS C86081E Series Our 100% quality screening tests include a stabilization bake at 85°C for a minimum of 10 hours, burn-in and thermal shock: 5 cycles, -20 to +70°C.
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OCR Scan
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3030bl0
ff-07
C86081E
C30616E
C30617E
C30986E
ED-0051/12/90
SIECOR Fiber Optic cable
siecor
EG*G Optoelectronics
Siecor 62.5
C86081E-13
C86081E-14
1300 nm LEDs
SIECOR Fiber Optics
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SIECOR Fiber Optic cable
Abstract: EG*G Optoelectronics 2sa 1300 equivalent c30617e Siecor C860XXE-12 C30654 C30617 Siecor 62.5 SIECOR Fiber Optics
Text: E G & 6 /CANADA/ OPTOELEK 47E » • 303DblG 00002=13 h ■ E O S iG CANA C86075E & OPTOELECTRONICS C86082E Series T - v t - e i C86082E Series C86075E Series HI“ - Dual-in-Line Package with Single or
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OCR Scan
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303Dbl0
C86075E
C86082E
C86075E
C30616E,
C30617E
C30654
ED-0050/12/90
SIECOR Fiber Optic cable
EG*G Optoelectronics
2sa 1300 equivalent
Siecor
C860XXE-12
C30617
Siecor 62.5
SIECOR Fiber Optics
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tic 1060
Abstract: No abstract text available
Text: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,
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OCR Scan
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303Qb]
C30807,
C30808,
C30809
C30810,
C30822,
C30831
C30808
C30809,
C30822
tic 1060
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PDF
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SIECOR Fiber Optic cable
Abstract: Siecor 62.5
Text: E G & G/CANADA/OPTOELEK ^ *4?E I> • 3G3GblD 00002=17 EB kO OPTOELECTRONICS C86081E Series I ■ H The EG&G series of 1300 nm LEDs are edge emitting InGaAsP diodes made by vapor phase epitaxy to give high optical power at 65°C. The design utilizes advanced geometries to prevent
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OCR Scan
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C86081E
C30616E,
C30617E
C30986E
ED-0051/12/90
SIECOR Fiber Optic cable
Siecor 62.5
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PDF
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SIECOR Fiber Optic cable
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK ^ M7E D • 3ü3DblG OGDOE^ EGzG OPTOELECTRONICS h ■ CANA C86075E& C86082E Series - n v / ' O i C86082E Series C86075E Series The EG&G series of 1300 nm LEDs are edge emitting InGaAsP
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OCR Scan
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C86075E&
C86082E
C86075E
ED-0050/12/90
SIECOR Fiber Optic cable
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PDF
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quadrant photodiode rca
Abstract: No abstract text available
Text: E 6 & 6/CANAD A/O PTOELEK ID 303Dbl0 GDQ0143 IME « C A N A D ÆM Electro n • I v i I Photodiode C30927E DATA SHEET Optics % Quadrant Silicon Avalanche Photodiodes for Tracking Applications Optical Characteristics Full Angle for Totally illuminated Photosensitive S u r fa c e .
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OCR Scan
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303Dbl0
GDQ0143
C30927E
C30927E-03
C30927E-02
C30927E-01
VP-104
C30927E-01,
C30927E-02,
C30927E-03
quadrant photodiode rca
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Untitled
Abstract: No abstract text available
Text: E G 8t G / C A N A D A / O P T O E L E K It C il 1ÜE D • 3G3GblO □□□□□S3 T *CANA Infrared Emitters Electro Optics Eiectrooptics and Devices S86017E, S86018E S86020E, S86021E S86017E S86018E o High-Speed Gallium Aluminum Arsenide IR-Emitters for Continuous
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OCR Scan
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S86017E,
S86018E
S86020E,
S86021E
S86017E
S86020E
S86020E
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PDF
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EG*G Optoelectronics
Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
Text: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage
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OCR Scan
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3030bl0
1550nm
C86091E
C86091E
ED-0053/06/91
EG*G Optoelectronics
C30642
eg and g laser diode
C30641
indium gallium arsenide phosphide
Indium Gallium Arsenide Phosphide lasers
C30618
C30619
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/ CANADA/OPTO ELE K ItC il IO D • 3D3DblD GOOOOflb bS7 W C A N A ^ Planar PIN InGaAs Photodiodes C30616, C30637, C30617 DATA SHEET Electro Optics ■ S pectral resp o n se ran g e 1100 to 1700 n m ■ H igh responsivity ■ Low capacitance ■ Fast resp o n se tim e
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OCR Scan
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C30616,
C30637,
C30617
ED-0019/03/88
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PDF
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RCA c30808
Abstract: TAG60 3G30 L568 C30822 photodiode C30807 C30809 C30810 d28j 35XL
Text: E G & G/CANADA/OPTOELEK 3G30blQ ID □□□□!□! 7T3 ICANA Photodiode I t C J C30807, C30808, C30809 C30810, C30822, C30831 Optics E le c ,r o l DATA SHEET ' V f'S T 3 N-Type Silicon p-i-n Photodetectors Broad Range of Photo sensitive Surface Areas 0.2 mm2 to 100 mm2
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OCR Scan
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3G30blQ
C30807,
C30808,
C30809
C30810,
C30822,
C30831
l-571
C30810
C30807
RCA c30808
TAG60
3G30
L568
C30822 photodiode
C30810
d28j
35XL
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C30817
Abstract: s915 C30872 C30954E C30955E tic 1060 C30956E s914 C30916E 92LS-S916
Text: £ n G & G/CANADA/OPTOELEK e / ID » l Electro Optics 3 D 3 D b lO O O O O IH ^ bbO ICANA 'T '- y / '- S V Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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OCR Scan
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3030bl0
C30954E,
C30955E,
C30956E
C30954E
C30955E
Range--40Â
C30817
s915
C30872
C30955E
tic 1060
C30956E
s914
C30916E
92LS-S916
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PDF
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C30902E
Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
Text: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems
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OCR Scan
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74fl4b75
DDDD133
C30904E,
C30905E,
C30908E
C30902E
C30904E
avalanche photodiodes
C30817
C30905E
C30916E
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PDF
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Untitled
Abstract: No abstract text available
Text: £ G & G/CANADA/OPTOELEK I t C J I sfj ID D Electro Optics m 3030bl0 D O G G I E bbO ICANA Photodiode C30954E, C30955E, C30956E DATA SHEET Large Area Long Wavelength Enhanced Silicon Avalanche Photodiodes for General-Purpose Applications • High Quantum Efficiency —
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OCR Scan
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3030bl0
C30954E,
C30955E,
C30956E
C30956E
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PDF
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C30617E
Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
Text: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E
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3030blG
C86013E
C86054E
1300nm
1300nm)
C30616E,
C30617E
C30986E
C86054E
C30616E
ingaas LED
5-1304
C86057E-13
C86057E-13-TC
C86057E-14
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PDF
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laser rca
Abstract: 904nm
Text: E 6 & G/CANADA/OPTOELEK ID D • H B ÆM Electro ■ m v V ^ IO p t ic s 3G3DblO QQQG07G 2TT ■ CANA'p.tf 1 - 0 5 ^ SG2000A Series GaAs Pulsed Lasers DATA SHEET 904 nm Gallium Arsenide Injection Lasers for Pulsed Operation Small Emitting Areas Variants With Reverse-Case Polarity are Available
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OCR Scan
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QQQG07G
SG2000A
SG2012A
SG2001A
SG2002A
SG2003A
SG2004A
SG2005A
SG2006A
laser rca
904nm
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PDF
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELÊK BOBOblD ODDOESb Q • CANA 850 nm Quantum Well 7^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package T O peration at 50ns pulse duration and 3 kH z repetition rate H igh P eak O utput Pow er: 10W @ 17 A
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OCR Scan
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C86083E
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PDF
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C86083E
Abstract: DHHS
Text: E G & G/CANADA/OPTOELÊK ETE D 3030blD 000025b □ ICANA 850 nm Quantum Weil7^ ^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package • T ■ O p eration at 50n s p ulse d u ration and 3 k H z rep etition rate ■ H igh P ea k O u tp u t P ow er:
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OCR Scan
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3030blD
0000E5b
C86083E
ED-0041/10/89
DHHS
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PDF
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090Q
Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet C30902 rca 514 QC-04 30080 46 spectran C30998-010 C30998-250 303Db
Text: E G 8. G / C A N A D A / O P T O E L E K R C /1 303db l0 ID DD00171 DD7 I CANA Silicon Avalanche Photodiodes C30998 Series Optics DATA SHEET '-HI-6 1 For Detection of 400 to 1000 nm Radiation Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails
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OCR Scan
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303dbl0
C30998
--H/-67
C30998-XXXQC-YY
L-1075
C30998-XXX
14-pin
C30902)
ED-0016/02/88
090Q
PREAMPLIFIER TRANSIMPEDANCE optic fet
C30902
rca 514
QC-04
30080 46
spectran
C30998-010
C30998-250
303Db
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PDF
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photodiode demodulation
Abstract: EG*G Optoelectronics rca 036 C30957E
Text: ^Ü^EG kG CANADA LTD. Optoelectronics Division Wr$ï- Formerly; ItC il W Effective January 1, 1991 :tro ics Photodiode C30957E DATA SHEET n-Type Silicon p-i-n Photodetector • Detector Chip Close to Window ■ Low Operating Voltage — VR = 45 V ■ Anti-Reflection Coated to Enhance Responsivity at 900 nm
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OCR Scan
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C30957E
C30957E
ED-0032/10/88
photodiode demodulation
EG*G Optoelectronics
rca 036
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PDF
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A1013 equivalent
Abstract: C30900E A1013
Text: E G & G/CANADA/OPTOELEK I f G i l 3 G 3 GblO ID 0 0 0 G123 Electro Optics and Devices 354 • CANA Photodiode Developm ental Type C30900E _ T - H l - f t £ P-Type Silicon p-i-n Photodetector Wide Range of Operating Voltage —
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OCR Scan
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000G123
C30900E
C30900E
KLS-4223R1
A1013 equivalent
A1013
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PDF
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TA 8903 SN
Abstract: No abstract text available
Text: rMDNT* HEWLETT-PACKARD/ CMPNTS blE D • bit » — 4HH75ÛH 0006=170 =J43 M H P A Thai HEWLETT mLlLMPACKARD Silicon Bipolar Monolithic Variable Gain Amplifier Technical Data HPVA-0180 Features Description P la stic SO-8 P a c k a g e • 3 dB Bandw idth: DC to
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OCR Scan
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4HH75Ã
HPVA-0180
HEDS-9000,
HEDS-9100,
HEDS-9200
HEDS-8903
HEDS-5540
HEDS-5640
HEDS-9040
HEDS-9140
TA 8903 SN
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PDF
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TH7852A
Abstract: 7852a osjn
Text: TH 7852A FRAME TRANSFER CCD IMAGE SENSOR 288 X 208 PIXELS • Compatible with CCIR TV standard. ■ 1/2” optics compatible image format. ■ 2-phase, frame tranfer organization dynamic range: 3000/1 . ■ Optimized resolution and responsivity in the 400-1100 nm spectrum (visible + near infrared).
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OCR Scan
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DSTH7852AT70394
TH7852A
7852a
osjn
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PDF
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