BAS16-02W
Abstract: BAS1602W SCD80
Text: BAS16-02W Silicon Switching Diode For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS16-02W 3 1=C SCD80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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Original
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BAS16-02W
VES05991
SCD80
Aug-29-2001
EHB00025
BAS16-02W
BAS1602W
SCD80
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PDF
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BAS16S
Abstract: VPS05604 4C3 diode
Text: BAS16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2
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Original
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BAS16S
OT-363
VPS05604
EHA07193
EHA07291
OT363
Jul-06-2001
EHB00025
BAS16S
VPS05604
4C3 diode
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PDF
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Q62702-A1239
Abstract: No abstract text available
Text: BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications 2 1 VES05991 Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage
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Original
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6-02W
VES05991
Q62702-A1239
SCD-80
Jul-24-1998
EHB00023
Q62702-A1239
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16-02W Silicon Switching Diode • For high-speed switching applications 2 1 VES05991 Type Marking Pin Configuration Package BAS 16-02W 3 1=C SCD-80 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage VRM 85 Forward current
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Original
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6-02W
VES05991
SCD-80
EHB00025
Oct-08-1999
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PDF
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VPS05604
Abstract: No abstract text available
Text: BAS 16S Silicon Switching Diode Array 4 For high-speed switching applications 5 6 Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2
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Original
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OT-363
VPS05604
EHA07193
EHA07291
OT-363
Aug-09-1999
EHB00025
EHB00022
VPS05604
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PDF
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C2C36
Abstract: VPW09197 BAS21U SC74
Text: BAS21U Silicon Switching Diode Array 5 4 6 For high-speed switching applications Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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Original
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BAS21U
VPW09197
EHA07291
EHB00028
Aug-07-2001
C2C36
VPW09197
BAS21U
SC74
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PDF
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Untitled
Abstract: No abstract text available
Text: BAS 16U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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Original
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VPW09197
EHA07291
SC-74
Apr-21-1999
EHB00025
EHB00022
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PDF
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transistor a1241
Abstract: A1241 transistor a1241 datasheet Q62702-A1241 VPS05604 5-30K
Text: BAS 16S Silicon Switching Diode Array 4 • For high-speed switching applications 5 • Internal galvanic isolated Diodes 6 in one package Tape loading orientation 2 1 Type Marking Ordering Code Pin Configuration BAS 16S A6s 3 VPS05604 Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
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Original
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VPS05604
Q62702-A1241
OT-363
Apr-24-1998
EHB00025
EHB00022
transistor a1241
A1241
transistor a1241 datasheet
VPS05604
5-30K
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PDF
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marking 6c1
Abstract: BAS16U SC74
Text: BAS16U Silicon Switching Diode Array 5 For high-speed switching applications 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74
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Original
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BAS16U
VPW09197
EHA07291
Jul-06-2001
EHB00025
EHB00022
marking 6c1
BAS16U
SC74
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PDF
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SC74
Abstract: JSs diode
Text: BAS 21U Silicon Switching Diode Array For high-speed switching applications 5 4 6 Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS 21U JSs Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC-74
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Original
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VPW09197
EHA07291
SC-74
Apr-16-1999
EHB00029
EHB00027
SC74
JSs diode
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PDF
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A6S marking code
Abstract: No abstract text available
Text: SIEMENS BAS 16S Silicon Sw itching Diode Array • For high-speed switching applications • Internal galvanic isolated Diodes in one package Tape loading orientation Top View 6 54 n n n M arking on S O T -363 package ( f o r e xam ple W Is) co rre spo n ds to pin 1 o f device
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OCR Scan
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EHA07193
EHA0729I
Q62702-A1241
OT-363
EHN00016
100ns,
A6S marking code
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16-02W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-02W 3 Q62702-A1239 1=A SCD-80 2=C Maximum Ratings Parameter Symbol Diode reverse voltage Vr 75
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OCR Scan
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6-02W
Q62702-A1239
SCD-80
100//A
EHN00016
100ns,
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PDF
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