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    ELECTRONIC BALLAST WITH NPN TRANSISTOR Search Results

    ELECTRONIC BALLAST WITH NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRJ43DR7LV224KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV474KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ55DR7LV334KW01K Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd
    GRJ43QR7LV154KW01L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors with Soft Termination for General Purpose Visit Murata Manufacturing Co Ltd

    ELECTRONIC BALLAST WITH NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    telefunken ta 400

    Abstract: but46 sot-23 npn marking code cr
    Text: I TELEFUNKEN ELECTRONIC 17E T> m fi^GCHb 0001513 BUT 46 - BUT 46 A •¡nULHFlItilKdMelectronic CrwtfveTKhft0t09«$ r - 2 3 - 1 3 Silicon NPN Power Switching Transistors Applications: Switching mode power supply, electronic ballast and driver circuits with


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    15A3DIN E--07 telefunken ta 400 but46 sot-23 npn marking code cr PDF

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


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    MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE PDF

    BUL804

    Abstract: ELECTRONIC BALLAST WITHOUT ic
    Text: BUL804 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Figure 1: Package n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n LOW SPREAD OF DYNAMIC PARAMETERS n n MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS n n DEDICATED FOR PFC SOLUTION IN


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    BUL804 O-220 BUL804 ELECTRONIC BALLAST WITHOUT ic PDF

    J13007-2

    Abstract: J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 fjp13007tu F J13007-2 FJP13007H1TU
    Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted


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    FJP13007 FJP13007 O-220 FJP13007H1TU FJP13007H2TU FJP13007TU J13007-2 J13007 J13007-1 j13007-1 fairchild transistor J13007-1 J-13007-2 transistor j13007 F J13007-2 PDF

    R3305 transistor

    Abstract: R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR FJN3303
    Text: FJN3303 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Charger 1 TO-92 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings Symbol TC = 25°C unless otherwise noted


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    FJN3303 FJN3303 FJN3303BU FJN3303TA R3305 transistor R3305 NPN transistor Electronic ballast to92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 700v 1a to-92 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PDF

    J3303

    Abstract: transistor J3303 NPN transistor Electronic ballast NPN Transistor 1.5A 700V FJE3303H2TU NPN transistor Electronic ballast to126
    Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter Absolute Maximum Ratings Symbol 2.Collector 3.Base TC = 25°C unless otherwise noted


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    FJE3303 FJE3303 O-126 FJE3303H1TU FJE3303H2 FJE3303H2TU FJE3303TU J3303 transistor J3303 NPN transistor Electronic ballast NPN Transistor 1.5A 700V NPN transistor Electronic ballast to126 PDF

    j13009

    Abstract: J13009-2 j13009 TRANSISTOR j130092 j13009 2 TRANSISTOR J13009 F J13009 transistor j13009-2 j130092 TRANSISTOR FJP13009
    Text: FJP13009 High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 1.Base Absolute Maximum Ratings* Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted notes_1


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    FJP13009 FJP13009 O-220 FJP13009H2TU FJP13009TU j13009 J13009-2 j13009 TRANSISTOR j130092 j13009 2 TRANSISTOR J13009 F J13009 transistor j13009-2 j130092 TRANSISTOR PDF

    T106-26

    Abstract: scr gate driver ic ic 555 timer gate drive scr electronic ballast with 555 ic mosfet triggering circuit using 555 PTC TDK turn on mosfet by ic 555 RC snubber mosfet design 555 timer igbt driver ic 555 timer gate drive mosfet
    Text: Index Design Tips DT 94-9A Maximizing the Latch Immunity of the IR2151 and IR2152 in Ballast Applications Introduction The IR2151 and IR2152 are high voltage integrated circuits ICs designed specifically for controlling electronic lamp ballasts. These devices include a front-end oscillator similar to the popular


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    IR2151 IR2152 T106-26 scr gate driver ic ic 555 timer gate drive scr electronic ballast with 555 ic mosfet triggering circuit using 555 PTC TDK turn on mosfet by ic 555 RC snubber mosfet design 555 timer igbt driver ic 555 timer gate drive mosfet PDF

    j3305

    Abstract: j3305-1 TRANSISTOR J3305-1 j3305-2 transistor j3305-2 J3305-2 y transistor J3305-2 transistor transistor j3305 TO220 Semiconductor Packaging FJP3305H2TU
    Text: High Voltage Fast-Switching NPN Power Transistor • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Regulator 1 1.Base Absolute Maximum Ratings Symbol TO-220 2.Collector 3.Emitter TC = 25°C unless otherwise noted


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    FJP3305 FJP3305 O-220 O-220-3 FJP3305H1TU FJP3305H2TU FJP3305TU j3305 j3305-1 TRANSISTOR J3305-1 j3305-2 transistor j3305-2 J3305-2 y transistor J3305-2 transistor transistor j3305 TO220 Semiconductor Packaging PDF

    j5304d

    Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
    Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application


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    FJE5304D FJE5304D O-126 FJE5304DTU j5304d j5304 transistor j5304d NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o PDF

    trace code TO-220

    Abstract: J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D
    Text: FJP3307D High Voltage Fast Switching NPN Power Transistor FJP3307D High Voltage Fast Switching NPN Power Transistor Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies Internal Schematic Diagram


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    FJP3307D FJP3307D O-220 FJP3307DH1 FJP3307DH1TU FJP3307DH2 FJP3307DH2TU FJP3307DTU trace code TO-220 J3307D-1 SWITCH IC J3307 transistor Electronic ballast 3307D PDF

    SL 100 NPN Transistor

    Abstract: T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC
    Text: e TRANSYS BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE m CTKONICS LIM IT E D Designed Specifically for High Frequency Electronic Ballasts D PACKAGE TOP VIEW Integrated Fast trr Anti-parallel Diode, Enhancing Reliability B l= Diode trr Typically 500 ns


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    BULD25D, BULD25DR, BULD25SL T0220 SL 100 NPN Transistor T1 SL 100 NPN Transistor TRANSISTOR sl 100 sl 100 transistor of transistor sl 100 "Safe Operating Area and Thermal Design" silicon BULD25DR sl diode NPN transistor Electronic ballast BULD125KC PDF

    st 393

    Abstract: BUL804 JESD97
    Text: BUL804 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ In compliance with the 2002/93/EC European


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    BUL804 2002/93/EC O-220 st 393 BUL804 JESD97 PDF

    st 393

    Abstract: BUL705 JESD97
    Text: BUL705 High voltage fast-switching NPN Power Transistor General features • NPN Transistor ■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C


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    BUL705 2002/93/EC O-220 st 393 BUL705 JESD97 PDF

    BU1706AX

    Abstract: veb-12v ELECTRONIC BALLAST 12v 12v ballast ic
    Text: SavantIC Semiconductor Product Specification BU1706AX Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage ·High speed switching APPLICATIONS ·For use in high frequency electronic lighting ballast applications. PINNING PIN DESCRIPTION


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    BU1706AX O-220F O-220F) BU1706AX veb-12v ELECTRONIC BALLAST 12v 12v ballast ic PDF

    BUL45

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BUL45 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Fast switching speed ·High voltage APPLICATIONS ·Designed for use in electronic ballast and In switchmode power supplies PINNING PIN DESCRIPTION


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    BUL45 O-220C BUL45 PDF

    NPN transistor Electronic ballast to92

    Abstract: fjn13003bu transistor Electronic ballast electronic ballast with npn transistor
    Text: FJN13003 FJN13003 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast up to 21W TO-92 1 1. Emitter 2. Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


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    FJN13003 O-92-3 NPN transistor Electronic ballast to92 fjn13003bu transistor Electronic ballast electronic ballast with npn transistor PDF

    scr gate driver ic

    Abstract: ic 555 timer gate drive scr scr driver ic for rectifier 3 phase T106-26 IR2151 DT 94-3 ic 555 timer gate drive mosfet electronic ballast with 555 ic igbt driver with 555 timer RC snubber mosfet design ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
    Text: s s D esig n T ips D T 94-9 IX T K K N A T IO N A I. K l.C t J lU .R CORI*. A IT I.1 C A T 1 0N S K \ ;. 233 K A N S A S Vi'. I I. S K U N D O . C A 911245 I VI . <310>322-333l 1 A \ <.U 11 322-3332 MAXIMIZING THE LATCH IMMUNITY OF THE IR2151 & IR2152 IN BALLAST APPLICATIONS


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    UHMJ22-333I JIWJ22-3JJ2 IR2151 IR2152 IR2151 scr gate driver ic ic 555 timer gate drive scr scr driver ic for rectifier 3 phase T106-26 IR2151 DT 94-3 ic 555 timer gate drive mosfet electronic ballast with 555 ic igbt driver with 555 timer RC snubber mosfet design ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn PDF

    BUJ403A

    Abstract: tmb12 dc Motor control IC
    Text: SavantIC Semiconductor Product Specification BUJ403A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage,high speed APPLICATIONS ·Designed for use in high frequency electronic lighting ballast applications, converters,inverters,switching regulators,


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    BUJ403A O-220C 500mA BUJ403A tmb12 dc Motor control IC PDF

    ZXGD3004E6

    Abstract: ZXGD3003E6 ZXGD3002 ZXGD3002E6 ZXGD3003 2A mosfet igbt driver stage BJT 2222 ZXGD3001E6 ZETEX GATE DRIVER inverter design using plc
    Text: AN52 IGBT gate drive considerations in electronic lamp ballasts Yong Ang, Applications Engineer, Zetex Semiconductors The use of Zetex high speed non-inverting gate drivers for IGBT half-bridge electronics ballasts Introduction The purpose of this note is to demonstrate the design of fast switching IGBT's gate drive for electronic


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    D-81541 ZXGD3004E6 ZXGD3003E6 ZXGD3002 ZXGD3002E6 ZXGD3003 2A mosfet igbt driver stage BJT 2222 ZXGD3001E6 ZETEX GATE DRIVER inverter design using plc PDF

    BUL56B

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BUL56B Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ·Fast switching ·High energy rating APPLICATIONS ·Designed for use in electronic ballast applications PINNING PIN DESCRIPTION


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    BUL56B O-220C BUL56B PDF

    TRANSISTOR MOTOROLA MAC 223

    Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
    Text: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),


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    PDF

    BC107 BJT

    Abstract: electronic ballast 11w 2 pin cfl lamp 1n4148 zener diode 11w 2 pin cfl tube circuit BJT based electronic ballast schematic BJT BC107 CFL self electronic ballast 11W 2.2 microfarad 400v ac capacitor equivalent component of transistor BC107 11w cfl choke circuit
    Text: AN1694 - APPLICATION NOTE VIPower: ELECTRONIC BALLAST FOR REMOVABLE CFL N. Aiello – S. Messina ABSTRACT This technical note describes how a High Frequency ballast based on VK05CFL is able to drive removable fluorescent tubes. The design is intended for 5 to 13W fluorescent lamps and 110V or 230V


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    AN1694 VK05CFL BC107 BJT electronic ballast 11w 2 pin cfl lamp 1n4148 zener diode 11w 2 pin cfl tube circuit BJT based electronic ballast schematic BJT BC107 CFL self electronic ballast 11W 2.2 microfarad 400v ac capacitor equivalent component of transistor BC107 11w cfl choke circuit PDF

    MJE18002

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification MJE18002 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast PINNING


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    MJE18002 O-220 CycleB10% MJE18002 PDF