ELM7785-7PS
Abstract: ELM7785-7PST ELM7785 FET MARKING Device Innovations
Text: ELM7785-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-7PS is a power GaAs FET that is internally matched for
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ELM7785-7PS
ELM7785-7PS
ELM7785-7PST
ELM7785
FET MARKING
Device Innovations
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SUMITOMO 1085
Abstract: ELM7785-4PS SUMITOMO 1710
Text: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for
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ELM7785-4PS
ELM7785-4PS
SUMITOMO 1085
SUMITOMO 1710
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Untitled
Abstract: No abstract text available
Text: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: hadd=34% (Typ.) Broad Band: 7.7 to 8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for
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ELM7785-4PS
ELM7785-4PS
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10f 471
Abstract: ELM7785-10F
Text: ELM7785-10F C-band Internally Matched FET FEATURES ・High Output Power ： P1dB=40.5dBm typ. ・High Gain ： G1dB=8.5dB(typ.) ・High P.A.E. ： ηadd=37%(typ.) ・Broad Band ： 7.7 - 8.5GHｚ ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package
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ELM7785-10F
ELM7785-10F
17scarded
10f 471
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ELM7785
Abstract: No abstract text available
Text: ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.5dBm typ. High Gain : G1dB=8.0dB(typ.) High P.A.E. : ηadd=37%(typ.) Broad Band : 7.7 to 8.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The ELM7785-16F is a power GaAs FET that is internally
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ELM7785-16F
50ohm
ELM7785-16F
50ohm
ELM7785
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Untitled
Abstract: No abstract text available
Text: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: add=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for
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ELM7785-4PS
ELM7785-4PS
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ELM5359-60F
Abstract: 501-17 ED-4701 ELM7785-60F
Text: ELM7785-60F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=48.0dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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ELM7785-60F
ELM7785-60F
1906B,
ELM5359-60F
501-17
ED-4701
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JESD22-A114
Abstract: No abstract text available
Text: ELM7785-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: hadd=35%(Typ.) ・Broad Band: 7.7～8.5GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION
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ELM7785-35F
ELM7785-35F
1906B,
JESD22-A114
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FLL57MK
Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Text: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.
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FLL810IQ-4C
FLL600IQ-2
FLL400IP-2
FLL300IL-1
FLL200IB-1
FLL300IL-2
FLL200IB-2
FLL300IL-3
FLL200IB-3
FLL57MK
ELM7785-60F
FLL400IP2
flc107
FLK027WG
FLC057WG
FLL357
fll177
FLL357ME
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