Untitled
Abstract: No abstract text available
Text: EMRS-1L E-Series Surface Mount Mixer 0.5—500 MHz SM-1 Package Features • • • LO Power +3 dBm Up to –1 dBm RF Surface Mount Description M/A-COM’s EMRS-1L is a low drive , surface mount mixer suitable for use in wireless applications. Electrical Specifications @ -55°C - +100°C , Z0 = 50 Ohms, LO = +3dBm
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em6ab160
Abstract: EM6AB160TSA EM6AB160TSA-5G DQ11 EM6AB160TS
Text: EtronTech EM6AB160TSA 32M x 16 bit DDR Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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EM6AB160TSA
200MHz
16-bit
em6ab160
EM6AB160TSA
EM6AB160TSA-5G
DQ11
EM6AB160TS
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AS4C8M16D1-5TIN
Abstract: No abstract text available
Text: AS4C8M16D1 8M x 16 DDR Synchronous DRAM SDRAM Released (Rev. 1.1, Feb. /2009) Confidential Features Overview Fast clock rate: 200MHz Differential Clock CK & CK input Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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AS4C8M16D1
200MHz
16-bit
AS4C8M16D1-5TIN
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Untitled
Abstract: No abstract text available
Text: AS4C8M16D1 8M x 16 DDR Synchronous DRAM SDRAM Confidential Advanced (Rev. 1.1, Feb. /2009) Features Overview Fast clock rate: 200MHz Differential Clock CK & CK input Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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AS4C8M16D1
200MHz
16-bit
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AS4C32M16D1-5TIN
Abstract: AS4C32M16D1
Text: AS4C32M16D1 32M x 16 bit DDR Synchronous DRAM SDRAM Alliance Memory Confidential Advanced (Rev. 1.1, July / 2011) Features Overview Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation
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AS4C32M16D1
200MHz
16-bit
AS4C32M16D1-5TIN
AS4C32M16D1
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AN-100
Abstract: CPC7582BC EIA-481-2 J-STD-020A 5510P
Text: CPC7584 Line Card Access Switch Description • Small 16-pin SOIC or micro-leadframe package • Micro-leadframe package MLP printed circuit board footprint is 70% smaller than 4TH generation EMRs and 60% smaller than SOIC version • Monolithic IC reliability
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CPC7584
16-pin
CPC7584
DS-CPC7584
AN-100
CPC7582BC
EIA-481-2
J-STD-020A
5510P
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AS4C4M16D1-5TIN
Abstract: AS4C4M16D1
Text: AS4C4M16D1 4M x 16 DDR Synchronous DRAM SDRAM Alliance Memory Confidential Advanced (Rev. 1.0, May /2011) Overview Features Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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AS4C4M16D1
200MHz
16-bit
AS4C4M16D1-5TIN
AS4C4M16D1
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EM6AA160TSA-5G
Abstract: EM6AA160TSA EM6AA160 EM6AA160TSA-4G EM6AA160TS Etron Technology
Text: EtronTech EM6AA160TSA 16M x 16 bit DDR Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • Fast clock rate: 250/200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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EM6AA160TSA
250/200MHz
16-bit
EM6AA160TSA-5G
EM6AA160TSA
EM6AA160
EM6AA160TSA-4G
EM6AA160TS
Etron Technology
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AS4C16M16D1-5TIN
Abstract: AS4C16M16D1
Text: AS4C16M16D1 16M x 16 bit DDR Synchronous DRAM SDRAM Alliance Memory Confidential Features Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 4M x 16-bit for each bank
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AS4C16M16D1
200MHz
16-bit
60ball
AS4C16M16D1-5TIN
AS4C16M16D1
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AN-100
Abstract: CPC7583 GR-1089-CORE J-STD-020A
Text: CPC7583 Line Card Access Switch Features Description • Small 28-pin SOIC or micro-leadframe MLP package • MLP version provides 65% PCB area reduction over 4th generation EMRs, and 60% smaller footprint than SOIC version • Monolithic IC reliability
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CPC7583
28-pin
DS-CPC7583-R
AN-100
CPC7583
GR-1089-CORE
J-STD-020A
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EM6A9160TSA-5G
Abstract: EM6A9160TSA EM6A9160 em6a9160ts em6a916
Text: EtronTech EM6A9160TSA 8M x 16 DDR Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • Fast clock rate: 200MHz Differential Clock CK & CK input Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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EM6A9160TSA
200MHz
16-bit
EM6A9160TSA-5G
EM6A9160TSA
EM6A9160
em6a9160ts
em6a916
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bt 1696
Abstract: 1A12 DDR200 DDR266A DDR266B DDR333
Text: Device Operations DDR SDRAM C. Device Operation Simplified State Diagram Power Applied Power On Precharge PREALL Self Refresh REFS REFSX MRS MRS EMRS REFA Idle Auto Refresh CKEL CKEH Active Power Down ACT Precharge Power Down CKEH CKEL Burst Stop Row Active
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A10/AP
200us
bt 1696
1A12
DDR200
DDR266A
DDR266B
DDR333
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em6ab160
Abstract: EM6AB160TSC-5G EM6AB160TSC EM6AB160TS
Text: EtronTech EM6AB160TSC 32M x 16 bit DDR Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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EM6AB160TSC
200MHz
16-bit
em6ab160
EM6AB160TSC-5G
EM6AB160TSC
EM6AB160TS
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EM6A8160
Abstract: EM6A8160TSA EM6A8160TSA-5G
Text: EtronTech EM6A8160TSA 4M x 16 DDR Synchronous DRAM SDRAM Etron Confidential Features • • • • • • • • Fast clock rate: 200MHz Differential Clock CK & CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture
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EM6A8160TSA
200MHz
16-bit
EM6A8160
EM6A8160TSA
EM6A8160TSA-5G
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CPC7583
Abstract: GR-1089-CORE
Text: CPC7583 Line Card Access Switch Features Description • Small 20-pin or 28-pin SOIC or 28-pin DFN • DFN version provides 65% PCB area reduction over 4th generation EMRs • Monolithic IC reliability • Low, matched, RON • Eliminates the need for zero-cross switching
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CPC7583
20-pin
28-pin
CPC7583
10-pole
DS-CPC7583
GR-1089-CORE
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CPC7583
Abstract: GR-1089-CORE 05S400
Text: Not for New Designs CPC7583 Line Card Access Switch Features Description • Small 20-pin or 28-pin SOIC or 28-pin DFN • DFN version provides 65% PCB area reduction over 4th generation EMRs • Monolithic IC reliability • Low, matched, RON • Eliminates the need for zero-cross switching
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CPC7583
20-pin
28-pin
CPC7583
10-polenty
DS-CPC7583
GR-1089-CORE
05S400
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AN-100
Abstract: CPC7583 GR-1089-CORE Cadence
Text: CPC7583 Line Card Access Switch Features Description • Small 20 pin or 28 pin SOIC or 28 pin micro-leadframe MLP package • MLP version provides 65% PCB area reduction over 4th generation EMRs • Monolithic IC reliability • Low, matched, RON • Eliminates the need for zero-cross switching
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CPC7583
CPC7583
10-anty
DS-DS-CPC7583-R04
AN-100
GR-1089-CORE
Cadence
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Untitled
Abstract: No abstract text available
Text: Not for New Designs CPC7583 Line Card Access Switch Features Description • Small 20-pin or 28-pin SOIC or 28-pin DFN • DFN version provides 65% PCB area reduction over 4th generation EMRs • Monolithic IC reliability • Low, matched, RON • Eliminates the need for zero-cross switching
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CPC7583
20-pin
28-pin
CPC7583y
DS-CPC7583
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512 volt 100 current scr
Abstract: AN-100 CPC7583 GR-1089-CORE IPC-9502
Text: CPC7583 Line Card Access Switch Features Description • Small 20 pin or 28 pin SOIC or 28 pin micro-leadframe MLP package • MLP version provides 65% PCB area reduction over 4th generation EMRs • Monolithic IC reliability • Low, matched, RON • Eliminates the need for zero-cross switching
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CPC7583
CPC7583
DS-CPC7583
512 volt 100 current scr
AN-100
GR-1089-CORE
IPC-9502
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K0135
Abstract: No abstract text available
Text: Not for New Designs CPC7583 Line Card Access Switch Features Description • Small 20-pin or 28-pin SOIC or 28-pin DFN • DFN version provides 65% PCB area reduction over 4th generation EMRs • Monolithic IC reliability • Low, matched, RON • Eliminates the need for zero-cross switching
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CPC7583
20-pin
28-pin
CPC7583
10-pole
DS-CPC7583
K0135
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ca10 switch
Abstract: EM42AM1684RTA edo ram 16Mx16
Text: 256Mb DDR SDRAM Ordering Information EM 42 AM 16 8 4 R T A – 75 L EOREX MEMORY EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : Power S : Standard L : Low power 40 41 42 43 46 48 Package F : Pb-free G: Green Density 32M : 32 Mega Bits 16M : 16 Mega Bits
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256Mb
200MHz
167MHz
143MHz
133MHz
125MHz
100MHz
16Bank
32Bank
DCC-DD041157-3
ca10 switch
EM42AM1684RTA
edo ram 16Mx16
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Untitled
Abstract: No abstract text available
Text: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.
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M14D1G1664A
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Untitled
Abstract: No abstract text available
Text: ESMT DDR II SDRAM M14D2561616A 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe DQS, DQS ; DQS can be disabled for single-ended data strobe operation.
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M14D2561616A
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anzac mixers
Abstract: "RF Mixers" ANZAC EMT-3MH anzac mixer anzac EMA-220 MIXER EMA ANZ ESCM-1 sm314 EMRS-5
Text: n / A - C O M INC/ AN ZA C DIV SIE jm om D • 5^43177 0003577 145 ■ ANZ ^ P 7^ o S ' O l ANZAC RF & CELLULAR COMPONENTS Low Cost Frequency Mixers LEVEL 3 +3 dBm LO, up to -3 dBm RF SURFACE MOUNT MIXER FREQUENCY MHz L0/RF IF MODEL NO. EMRS-2L CONVERSION LOSS dB
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Sb43177
DC-1000
SM130
EMT-12MH
EMT-42MH
anzac mixers
"RF Mixers" ANZAC
EMT-3MH
anzac mixer
anzac
EMA-220
MIXER EMA
ANZ ESCM-1
sm314
EMRS-5
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