125OC
Abstract: XB01SB04A2BR diode 0.2 V 1A
Text: XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ! ! ! ! September 29, 2003 Ver. 4 ! APPLICATIONS " Rectification of compact DC/DC converter " Surge absorption caused by counter force of compact motors " Energy-saving for notebook PCs, hand-set " Protection against reverse connection of battery
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XB01SB04A2BR
OD-123
XB01SB04A2BR
OD-123
100mA
125OC
diode 0.2 V 1A
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125OC
Abstract: XB01SB04A2BR diode 0.2 V 1A
Text: XB01SB04A2BR Schottky Barrier Diode 1A, 40V Type ! ! ! ! September 29, 2003 Ver. 4 ! APPLICATIONS " Rectification of compact DC/DC converter " Surge absorption caused by counter force of compact motors " Energy-saving for notebook PCs, hand-set " Protection against reverse connection of battery
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XB01SB04A2BR
OD-123
XB01SB04A2BR
OD-123
100mA
125OC
diode 0.2 V 1A
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Untitled
Abstract: No abstract text available
Text: ZV Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume
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K1430
Abstract: M074
Text: ZV Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume
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Untitled
Abstract: No abstract text available
Text: ZV / ZVY Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume
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Untitled
Abstract: No abstract text available
Text: ZV / ZVY Series — Low Voltage Leaded Varistors Description The ZV Series of low voltage leaded multilayer varistors MLVs is designed to protect sensitive electronics devices operating in the low voltage region against high voltage / current surges. They offer excellent transient energy absorption due to improved energy volume
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marking code BBH
Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Text: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these
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SMA/DO214AC
SMCJ20CA
SMCJ22CA
SMCJ24CA
SMCJ26CA
SMCJ28CA
SMCJ30CA
SMCJ33CA
SMCJ40CA
SMCJ48CA
marking code BBH
st marking BBM code
st smd diode marking code
SMD circuits MARKING CODE AA
smd code marking 333
SMBJ8.5CA
marking code BUH
Marking Code SMD bbz
ae SMC MARKING
SMD CODE BUQ
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Varistor
Abstract: triac varistor varistor application mov surge surge protection energy absorption of diode varistor 4
Text: FEATURES * Wide operating voltages ranging from 5Vrms to 1000Vrms 6Vdc to 1465Vdc . * Fast response time of less than 25nS, instantly clamping the transient over voltage. * High surge current handling capability. * High energy absorption capability. * Low clamping voltages, providing better surge protection
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1000Vrms
1465Vdc)
Varistor
triac varistor
varistor application
mov surge
surge protection
energy absorption of diode
varistor 4
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GTA 15
Abstract: No abstract text available
Text: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high
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00V/s.
GTA 15
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Untitled
Abstract: No abstract text available
Text: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high
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Untitled
Abstract: No abstract text available
Text: GASTUBE ARRESTER Gas tube arrester GTA is a surge absorber featuring low capacitance and high surge absorption energy. lt consists of a sealed tube in which inert gas is injected and electrodes which are set at fixed intervals. The simple structure and the dimensional accuracy offer high
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DC100V
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Untitled
Abstract: No abstract text available
Text: §1. Operating Principles 1.1 Operating Principles of Laser Diodes LDs , Infrared Emitting Diodes (IREDs) and Photodiodes (PDs) 1.1.1 Emitting Principles E ach electron in an atom or m olecule has a specific discrete energy level, as show n in figure 1-1. T he
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shockley diode
Abstract: diode shockley shockley diode application shockley diode datasheet GA07 Sharp Semiconductor Lasers Quantum Effect Devices 121017 GA04
Text: Effect of Free-Carrier Absorption on Performance of 808 nm High-Power Laser Diodes K A Bulashevich1,2 , V F Mymrin2 , and S Yu Karpov2,3 1 2 3 Ioffe Physico-Technical Institute, RAS, St.Petersburg, 194021 Russia Soft-Impact, Ltd., P.O.Box 83, St.Petersburg, 194156 Russia
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laser14]
R1-29
shockley diode
diode shockley
shockley diode application
shockley diode datasheet
GA07
Sharp Semiconductor Lasers
Quantum Effect Devices
121017
GA04
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principles
Abstract: No abstract text available
Text: Section 1 Operating Principles 1.1 O p eratin g P rin cip les o f L aser Diodes LDs , Infrared Em itting Diodes (IREDs) and Photodiodes (PDs) 1.1.1 Emitting Principles Each electron in an atom or molecule has a specific discrete energy level, as shown in figure 1-1. The
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Physics and Technology
Abstract: physics pn junction diode structure
Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors
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06-Oct-14
Physics and Technology
physics
pn junction diode structure
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SOD87
Abstract: SOD87 footprint Diode zener smd d8 Zener diode smd marking 18 diode snubber sod-87 Diode zener smd SOD87 zener smd marking 2x flyback snubber marking D9 zener diode
Text: Philips Semiconductors Philips Semiconductors continues to lead the way in cutting-edge package options which meet demands for ever greater performance from continually smaller housings.With the SOD87 SMD diode power package, designers now have the ultimate combination of
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OD87e
MSD894)
SOD87
SOD87 footprint
Diode zener smd d8
Zener diode smd marking 18
diode snubber
sod-87
Diode zener smd SOD87
zener smd marking 2x
flyback snubber
marking D9 zener diode
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Sharp Semiconductor Lasers
Abstract: gaseous lasers cladding mode strip
Text: Operating Principles of Laser Diodes x x x x “LASER” IS an acronym for “Light Amplification by Stimulated Emission of Radiation. ” A laser is a device which uses one of a large number of solid, liquid, or gaseous materials to generate light and ampllfy it through the process of
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K30 varistor
Abstract: varistor k30 CN2220K30G CN2220S14BAUTOE2G2 CT0603L25HSG
Text: Ceramic transient voltage suppressors Selection procedures Date: August 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.
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CN2220S14BAUTOE2G2
CN2220S14BAUTOE2G2.
K30 varistor
varistor k30
CN2220K30G
CN2220S14BAUTOE2G2
CT0603L25HSG
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feature of ic UM 66
Abstract: wo02 Trench MOS Schottky Rectifier um 66 ic "A low barrier Schottky metal was used" 40L15CT 65PQ015 80CPT015 wo-02
Text: Increased Efficiency and Improved Reliability in “ORing” functions using Trench Schottky Technology Davide Chiola, Stephen Oliver, Marco Soldano International Rectifier, El Segundo, USA. As presented at PCIM Europe, 2002 Abstract – Presented in this paper are the characteristics of the first Trench MOS Schottky Diode released to
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WO02/19433
feature of ic UM 66
wo02
Trench MOS Schottky Rectifier
um 66 ic
"A low barrier Schottky metal was used"
40L15CT
65PQ015
80CPT015
wo-02
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Untitled
Abstract: No abstract text available
Text: Mid-IR Products Introduction Mid-Infrared Light Emitting Diodes and Photodiodes Light emitting diodes LEDs and Photodiodes (PDs) are semiconductor devices. LED or PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal
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VARISTOR s14 K50
Abstract: varistor s10 k50 VARISTOR K50 Siemens varistor family 4032 K50 K40 varistor Z5U Metal Oxide Varistor S20 K50 Varistor cu3225 VARISTOR s14 K40
Text: General Technical Information General technical information 1.1 Introduction Despite its many benefits, one of the few drawbacks of semiconductor technology is the vulnerability of solid-state devices to overvoltages. Even voltage pulses of very low energy can produce interference and damage, sometimes with far-reaching consequences. So, as electronics makes its
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varistor s20 k250
Abstract: K250 varistor siemens K250 varistor S18K250 s18k b25k250 varistor k250 S18 Metal Varistor Siemens varistor family airbag
Text: Application and Selection 2.1 Overvoltage types and sources O vervoltages are distinguished according to where they originate. 2.1.1 Internal overvoltages Internal overvoltages are those overvoltages that originate in the actual system which is to be pro
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hOW TO READ varistor VALUE
Abstract: "Surge Arresters" pspice SIOV-B40K275 VAR0374-N varistor S20 61000-4-X B40K275 LS50 S14K150 VAR0249-A
Text: Selection Procedure 2 Selection procedure 2.1 Overvoltage types and sources Overvoltages are distinguished according to where they originate. 2.1.1 Internal overvoltages Internal overvoltages are those overvoltages that originate in the actual system which is to be protected, e. g. through
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hOW TO READ varistor VALUE
Abstract: Z 151 VARISTOR B80 epcos VARISTOR B40K275 SIOV-B40K275 VAR0374-N VAR0271-J VARISTOR LS50 VAR0131-X
Text: SIOV metal oxide varistors Selection procedure Date: December 2007 Data Sheet EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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