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Excelics Semiconductor Inc EPB018A770FET Transistor
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EPB018A Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
EPB018A5		Eon Silicon Solution	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A5		Excelics Semiconductor	4-5V high super low noise high gain heterojunction power FET		Original	PDF
EPB018A5		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A5-70		Eon Silicon Solution	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A5-70		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A7		Excelics Semiconductor	4-5V high super low noise high gain heterojunction power FET		Original	PDF
EPB018A7		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A7-70		Eon Silicon Solution	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A7-70		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A9		Excelics Semiconductor	4-5V high super low noise high gain heterojunction power FET		Original	PDF
EPB018A9		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A9-70		Eon Silicon Solution	Super Low Noise High Gain Heterojunction FET		Original	PDF
EPB018A9-70		Excelics Semiconductor	Super Low Noise High Gain Heterojunction FET		Original	PDF

EPB018A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
EFA018A Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70 Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20	Original	EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70	PDF
A970 Abstract: EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET Text: Excelics EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET 6 6 ' • • • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE	Original	EPB018A5/A7/A9-70 12GHz Compressio18 Rn/50 A970 EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET	PDF
EPB018A5 Abstract: AU 6378 Text: Excelics EPB018A5/A7/A9 DATA SHEET Super Low Noise High Gain Heterojunction FET • • • • • • VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPB018A5/A7/A9 120GHz 12GHz EPB018A7 Rn/50 EPB018A5 AU 6378	PDF
EPB018A5-70 Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580 Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180	Original	EPB018A5 3x180 320X290 EPB018A7 EPB018A9 EPB025A EPB018A5-70 EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580	PDF
EPA080A-100P Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.	Original		PDF
b1415 Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89 Text: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs	Original	RTC/5/01/PSINTRO 24-hour 200oC, 275oC b1415 GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89	PDF
Curtice Abstract: EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A Text: Large Signal Model Parameters for Curtice-Cubic Model For Low Distortion GaAs Power FETs Curtice-Ettenburg Model Parameter BETA GAMMA VOUT0 VT0 A0 A1 A2 A3 TAU R1 R2 VB0 VBI RF IS N RDS CRF RD RG RS RIN CGSO CGDO FC CDS CGS CGD KF4 AF TNOM XTI EG VTOTC BETATCE	Original	EFA018A 00E-12 40E-14 00E-08 63E-13 80E-14 00E-14 EFA025A Curtice EFA018A EPA030A EPA480C EPA060B EFA040A EFA025A EPA025 220E-12 Excelics EPA018A	PDF
EPA018A Abstract: EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C Text: EXCELICS SEMICONDUCTOR, INC. Small Signal Equivalent Circuit Model The small signal model shown below can be useful for extrapolating and interpolating the S-parameters as well as for use in circuit simulators that cannot handle S-parameters directly. The element values are derived by fitting the	Original	EPA018A EPA025A EPA030C EPA040A EPA060A EFA480B EFA480C EFA720A EFA960B EFA1200A EPA018A EPA060B EFA018A Excelics EPA018A EPA480C EPA025A EPA040A EPA060A EPA240D EPA030C	PDF
EPB018A5 Abstract: EPB018A7 Text: EPB018B5/B7/B9 Super Low Noise High Gain Heterojunction FET ISSUED 11/01/2007 FEATURES • • • • • • VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION	Original	EPB018B5/B7/B9 120GHz 12GHz EPB018B5 EPB018B7 EPB018B9 EPB018A5 EPB018A7	PDF
EPA025A70 Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB	Original	RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A	PDF