epitaxx
Abstract: EPITAXX ETX 75
Text: EPITAXX INC SOE T> EPITAXX • 33bOMGb 000017b G WtZPX ETX 1550FJ-M, ETX 1550FC-M/XX 1550 nm Multimode ELED Module Description: EPITAXX ETX 1550FJ-M and ETX 1550FC-M are high power edge-emitting LED modules with multimode fiber pigtails. The devices are mounted in a flanged package for heatsinking. They offer a
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33bOMGb
000017b
1550FJ-M,
1550FC-M/XX
1550FJ-M
1550FC-M
100mA
1550nm
33bD40b
0D0D177
epitaxx
EPITAXX ETX 75
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epitaxx
Abstract: No abstract text available
Text: EPITAXX INC SME D EPITAXX • 33LiQMGfci 0000115 5 ■ ETX 1550FJ-S, ETX 1550FC-S/XX T—47 —07 1550 nm Singlemode ELED Module Description: EPITAXX ETX 1550FJ-S and ETX 1550FC-S are high power edge-emitting LED modules with singlemode fiber pigtails. The devices are mounted in a flanged package for heatsinking. They offer
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33LiQMGfci
1550FJ-S,
1550FC-S/XX
1550FJ-S
1550FC-S
100mA
1550nm
33bCm[
epitaxx
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EPITAXX ETX 75
Abstract: EPITAXX 1550FJ-S
Text: EPITAXX INC SME D EPITAXX • BBkOMOt OOaDllS S ■ ETX 1550FJ-S, ETX 1550FC-S/XX T-41-07 1550 nm Singlemode ELED Module Description: EPITAXX ETX 1550FJ-S and ETX 1550FC-S are high power edge-emitting LED modules with singlemode fiber pigtails. The devices are mounted in a flanged package for heatsinking. They offer
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1550FJ-S,
1550FC-S/XX
T-41-07
1550FJ-S
1550FC-S
100mA
1550nm
3Bb04GL
T-4T-07
EPITAXX ETX 75
EPITAXX
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epitaxx
Abstract: No abstract text available
Text: EPITAXX INC 33b04Qb S 4E D EPITAXX DOODGT? M ETX 30 & 100MLA 64,128 & 256 T-m - ss InGaAs Multiplexed Linear Photodiode Arrays Description: EPITAXX ETX 30MLA 64,128 and 256 and ETX 100MLA 64 and 128 are linear arrays of 64,128 and 256 elements. The pixel cross-section of the ETX 30 MLA is 30x30 microns;
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33b04Qb
100MLA
30MLA
30x30
100x30
epitaxx
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EPITAXX ETX 300
Abstract: EPITAXX EPITAXX ETX 75 LED 1550nm fiber LED 1550nm
Text: EPITAXX INC SÜE D EPITAXX • 33 bG 4G b D0 G0 17 b 0 « E P X ETX 1550FJ-M, ETX 1550FC-M/XX 1550 nm Multimode ELED Module Description: EPITAXX ETX 1550FJ-M and ETX 1550FC-M are high power edge-emitting LED modules with multimode fiber pigtails. The devices are mounted in a flanged package for heatsinking. They offer a
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33bG4Gb
0G017b
1550FJ-M,
1550FC-M/XX
1550FJ-M
1550FC-M
100mA
1550nm
33b040fc>
EPITAXX ETX 300
EPITAXX
EPITAXX ETX 75
LED 1550nm
fiber LED 1550nm
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EPITAXX
Abstract: InGaAs Epitaxx InGaAs photodiode TWO COLOR DETECTOR two color photodiode EPITAXX ingaas detector ETX 40
Text: I 33b040b QQOGISE fi « E P X SGE D EPITAXX INC EPITAXX -7 ETX 2000SI Si/lnGaAs Two Color Photodiodes Description: EPITAXX ETX 2000Si combines a 2.5 mm diameter Silicon photodiode over a 2.0 mm diameter InGaAs photodiode within a hermetic T05 package. This combination device
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33b040b
2000SI
2000Si
10E-14
X10E-13
33bOMQb
G0001S3
EPITAXX
InGaAs Epitaxx
InGaAs photodiode
TWO COLOR DETECTOR
two color photodiode
EPITAXX ingaas detector
ETX 40
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1300nm
Abstract: ingaas LED diode e4e EPITAXX photodiode led 609 nm
Text: EPITAXX INC 33L.04DL 0000151 Ö 54E D I EPITAXX ETX-ASOM-LD/PD & LED/PD T-41-91 Application-Specific Integrated 1300nm Electro-Optical Modules: Description: EPITAXX ETX-ASOM modules combine 1300nm active components with passive components within a single package. The ASOM-LD/PD consists of a 1300nm laser diode
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1300nm
100mA
100mA
1300nm
ingaas LED
diode e4e
EPITAXX
photodiode led 609 nm
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EPITAXX
Abstract: ETX505Q epitaxx quadrant InGaAs Epitaxx ETX 40 EPITAXX 40
Text: EPITAXX INC 54E D m 33b0M0b 0D00GÔ3 4 Ï EPITAXX ETX1Q5D, ETX505Q T '-m-m Dual and Quadrant Position Sensing InGaAs Photodiodes Description: EPITAXX ETX 105D and ETX 505Q are InGaAs bi-cell and quadrant photodiodes. They are sensitive in the near infrared spectrum and are characterized by low noise and long
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33b0M0b
0D00QÃ
ETX505Q
EPITAXX
ETX505Q
epitaxx quadrant
InGaAs Epitaxx
ETX 40
EPITAXX 40
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epitaxx
Abstract: InGaAs Epitaxx
Text: EPITAXX INC 5 ME D • 33b040b GDGGDbl T EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
epitaxx
InGaAs Epitaxx
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EPITAXX ETX 75
Abstract: InGaAs Epitaxx PIN ETX 75 FJ M EPITAXX J254 100rst 100RF ingaas photodetector epitaxx ETX 75FJ/FC 75FJ/FC-XX FC/JDSU ETX
Text: EPITAXX INC SOE D 33bCm0b DQQGLbS □ W Ê E P X ETX 75FJ/FC-xx Series ETX 1OORxx Series EPITAXX H ig h Speed InGaAs Photodetector M odules Fibered and Connector Receptacle Packages Features • Low capacitance for high bandwidth ■ Low dark current for high sensitivity
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33bOHab
75FJ/FC-xx
TA-TSY-000468
MIL-STD-883C
EPITAXX ETX 75
InGaAs Epitaxx PIN ETX 75 FJ M
EPITAXX
J254
100rst
100RF
ingaas photodetector
epitaxx ETX 75FJ/FC
FC/JDSU ETX
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EPITAXX
Abstract: T05 Package InGaAs photodiode ETX 40 Hz172 two color photodiode TWO COLOR DETECTOR LC InGaAs This two color detector is useful in temperature sensing applications
Text: 33b040b 000Q1SE ö H E P X SGE D EPITAXX INC IEPITAXX ETX 2000SI Si/lnGaAs Two Color Photodiodes Description: EPITAXX ETX 2000Si combines a 2.5 mm diameter Silicon photodiode over a 2.0 mm diameter InGaAs photodiode within a hermetic T05 package. This combination device
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33b040b
000Q1SE
2000SI
2000Si
33bQMQb
EPITAXX
T05 Package
InGaAs photodiode
ETX 40
Hz172
two color photodiode
TWO COLOR DETECTOR
LC InGaAs
This two color detector is useful in temperature sensing applications
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ETX 40
Abstract: InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector
Text: IDE D | 33b04Dfc. ODQQDSfl 5 EPITAXX INC HIGH SPEED InGaAs PIN PHOTODETECTORS Part Number ETX60B ETX 75 CER-H ETX 75T . ETX100TL ETX 300T •' ETX 75 FJ/FC T - Dark Size Capacitance i/umj Current nA . fpF) 0.1 . . 60 . 0.3 ~ •• ; 75 . • ' Vi , 0.1 •'
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33b04Dfc.
ETX60B
ETX100TL
O-46lens
10OTL
300TL
ETX500T
1000T
2000T5
3000T5
ETX 40
InGaAs Epitaxx APD
epitaxx
ETX1000T
epitaxx APD
INGAAS avalanche EPITAXX
InGaAs Epitaxx APD ETX
ingaas apd photodetector
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EPITAXX
Abstract: EPITAXX ETX 300 EPITAXX ETX 75 ETX1000T ETX300T ETX500T ETX500T-GR2.2 LIDAR ETX 40 ETX100T-GR2.2
Text: EPITAXX INC SDE D • 33b0M0b GQQGlbG 7 ■ EPX - p 4 l - 4 | ETX-GR SERIES EPITAXX NEAR-INFRARED ROOM-TEMPERATURE INDIUM GALLIUM ARSENIDE PHOTODETECTORS FOR 1.0-2.6 fim DESCRIPTION:_ EPITAXX GR-Series Extended Wavelength photodetectors consist of compositionally graded
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33b0M0b
EPITAXX
EPITAXX ETX 300
EPITAXX ETX 75
ETX1000T
ETX300T
ETX500T
ETX500T-GR2.2
LIDAR
ETX 40
ETX100T-GR2.2
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EPITAXX ETX 300
Abstract: EPITAXX EPITAXX ETX 75 EPITAXX ETX 100 RFC 2 ETX1300FJ LED pigtailed
Text: EPITAXX INC SDE J> • 33b040b OOOQlbfl 1 « E P X -p<//-07 ETX 1 3 0 0 RFC, ETX 1 3 0 0 RST EPITAXX ETX1300FJ' ETX1300FC 1300 nm High Power ELED Modules Features ■ High coupled pow er 75 |iW typical into multimode ■ High speed response (3.5 ns typical)
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33b040b
1300RFC,
1300RST
ETX1300FJ
1300FC
1300RFC
1300FJ-S
1300FC-M
EPITAXX ETX 300
EPITAXX
EPITAXX ETX 75
EPITAXX ETX 100 RFC 2
LED pigtailed
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microdot connector
Abstract: epitaxx ETX300
Text: E P I T A X X INC i S4 E D • 33bG4Qb DOOOOTl 3 ETX 20Q0/3QQ0TE, ETX1OQODE/DS EPITAXX Thermoelectric and Liquid Nitrogen Cooled InGaAs Photodiodes Description: EPITAXX ETX 2000TE AND ETX3000TE are thermoelectrically cooled InGaAs photodiodes with 2 and 3mm active diameter respectively. The photodiodes are mounted
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33bG4Qb
20Q0/3QQ0TE,
2000TE
ETX3000TE
1000DE
microdot connector
epitaxx
ETX300
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EPITAXX
Abstract: peltier cooler InGaAs Epitaxx ETX3000TE 3000TE ETX300
Text: E P I T A X X INC 2ME D EPITAXX 33bG40b DOOOOTl 3 ETX 2000/30Q0TE, ETX1000DE/DS I T -4 I-M I Thermoelectric and Liquid Nitrogen Cooled InGaAs Photodiodes Description: EPITAXX ETX 2000TE AND ETX3000TE are thermoelectrically cooled InGaAs photodiodes with 2 and 3mm active diameter respectively. The photodiodes are mounted
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B3b04Dh
2000/3000TE,
ETX1000DE/DS
2000TE
ETX3000TE
10OODE
EPITAXX
peltier cooler
InGaAs Epitaxx
3000TE
ETX300
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PDF
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InGaAs PIN photodiode 2600 nm
Abstract: epitaxx InGaAs Epitaxx ingaas photodetector
Text: EPITAXX INC 2ME D 33bQilDi, 0Q00Q75 5 t EPITAXX ETX1006R26 qi-m 2.6 |im InGaAs Photodiode Description: EPITAXX ETX 100GR26 is an InGaAs PIN photodiode which responds to wavelengths up to 2600 nm. The device incorporates a 100 micron diameter compositionally graded
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33bQilDi,
0Q00Q75
ETX1006R26
100GR26
2400nm
100GR
33bQ40b
0QD007b
ETX100GR26
InGaAs PIN photodiode 2600 nm
epitaxx
InGaAs Epitaxx
ingaas photodetector
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InGaas PIN photodiode chip
Abstract: EPITAXX EPITAXX 25b InGaas PIN photodiode chip back illuminated InGaAs photodiode 0G001 100C rise time of photodiode ETX 40 EPITAXX etx-25b
Text: EPITAXX SQE » INC • 33b0H0b GQG01S0 H H E P X " 7 ^ 4 fcHII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
1300nm
10kHz
InGaas PIN photodiode chip
EPITAXX
EPITAXX 25b
InGaas PIN photodiode chip back illuminated
InGaAs photodiode
0G001
100C
rise time of photodiode
ETX 40
EPITAXX etx-25b
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InGaAs Epitaxx
Abstract: EPITAXX InGaas PIN photodiode chip InGaas PIN photodiode chip back illuminated 100C
Text: E P I T A X X INC S4E D • 33b040b DODDDbT T ■ EPITAXX ETX 60B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 60B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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33b040b
-T74MU
33b0M0b
D00GG70
200pS/div
InGaAs Epitaxx
EPITAXX
InGaas PIN photodiode chip
InGaas PIN photodiode chip back illuminated
100C
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PDF
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Untitled
Abstract: No abstract text available
Text: EPITAXX SQE » INC • 3BbQ4Qti GQGG1S0 H H E P X " 7 ^ 4 fcKII A A A ETX 25B High Speed Back-Illuminated InGaAs PIN Photodiode Description: EPITAXX ETX 25B is a small area planar InGaAs photodiode mounted on a ceramic subcarrier. The device is illuminated through the substrate and its very low capacitance allows direct modulation at
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25/am
1300nm
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PDF
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EPITAXX ETX 300
Abstract: EPITAXX ETX 300T EPITAXX InGaAs Epitaxx PIN photodiode ps T046 ETX 40
Text: E P I T A X X INC D 33ta040ti DOOOOÔS Ô EPITAXX ETX 300T High Speed InGaAs PIN Photodiode Description: EPITAXX ETX 300T is a general purpose InGaAs planar pin photodiode. The device incorporates a bOOyi/m chip in a flat window T046 can. It is well suited for both optical communications and infrared
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33ta0M0ti
300CER-CUS)
33b04Db
EPITAXX ETX 300
EPITAXX ETX 300T
EPITAXX
InGaAs Epitaxx
PIN photodiode ps
T046
ETX 40
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PDF
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EPITAXX ETX 300T
Abstract: epitaxx InGaAs Epitaxx
Text: E P I T A X X INC 54E D • 33b040b 00000Ô5 B U EPITAXX ETX 300T High Speed InGaAs PIN Photodiode Description: EPITAXX ETX 300T is a general purpose InGaAs planar pin photodiode. The device incorporates a 300yum chip in a flat window T046 can. It is well suited for both optical communications and infrared
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33b040b
300yum
300CER-CUS)
EPITAXX ETX 300T
epitaxx
InGaAs Epitaxx
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PDF
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EPITAXX ETX 75
Abstract: epitaxx ETX300T-GR1.9 LIDAR ETX 40 epitaxx 250 ETX100T-GR2.2 InGaAs Epitaxx ETX300
Text: EPITAXX INC SDE D • 33bDMDh GQGDlbO 7 B IEP X - p 4 l - 4 | ETX-GR SERIES NEAR-INFRARED ROOM-TEMPERATURE INDIUM GALLIUM ARSENIDE PHOTODETECTORS FOR 1.0-2.6 fim DESCRIPTION: EPITAXX GR-Series Extended Wavelength photodetectors consist of compositionally graded
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PDF
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InGaAs PIN photodiode 2600 nm
Abstract: EPITAXX D 331 LIDAR InGaAs photodiode InGaAs Epitaxx 2400nm smv shunt ETX100GR26 T046
Text: EPITAXX INC 2ME D 3 3 b Q 0000075 5 IEPITAXX ETX1006R26 2.6 ,um InGaAs Photodiode Description: EPITAXX ETX 100GR26 is an InGaAs PIN photodiode which responds to wavelengths up to 2600 nm. The device incorporates a 100 micron diameter compositionally graded
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ETX100GR26
100GR26
S-60Q
InGaAs PIN photodiode 2600 nm
EPITAXX
D 331
LIDAR
InGaAs photodiode
InGaAs Epitaxx
2400nm
smv shunt
ETX100GR26
T046
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