Untitled
Abstract: No abstract text available
Text: NM27LV210 1,048,576-Bit 64K x 16 Low Voltage EPROM SEMICONDUCTOR TM NM27LV210 1,048,576-Bit (64K x 16) Low Voltage EPROM General Description Features The NM27LV210 is a high performance Low Voltage Electrical Programmable read only memory. It is manufactured using
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NM27LV210
576-Bit
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27C210
Abstract: 27C220 27C240 NM27C210
Text: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for
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NM27C210
576-Bit
NM27C210
27Tel:
27C210
27C220
27C240
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27C220
Abstract: 27C210 27C240 NM27C210
Text: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM27C210 is a high performance Electrically Programmable UV erasable ROM (EPROM). It contains 1,048,576 bits configured as 64K x 16 bit. It is offered in both erasable versions for
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NM27C210
576-Bit
NM27C210
27C220
27C210
27C240
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A276308-70
Abstract: A276308L-70 1N914 A276308 A276308-55 A276308-90 A276308L-55 a276308l
Text: A276308 Preliminary 64K X 8 OTP CMOS EPROM Document Title 64K X 8 OTP CMOS EPROM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue June 17, 1998 Preliminary 0.1 Change program verify mode VCC from 6.25V to VCC December 16, 1998 PRELIMINARY
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A276308
28-pin
32-PLCC
A276308
A276308-70
A276308L-70
1N914
A276308-55
A276308-90
A276308L-55
a276308l
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Untitled
Abstract: No abstract text available
Text: NM27C210 1,048,576-Bit 64K x 16 High Performance CMOS EPROM General Description Features The NM 27C210 is a high performance Electrically Program mable UV erasable ROM (EPROM). It contains 1,048,576 bits config ured as 64K x 16 bit. It is offered in both erasable versions for
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NM27C210
576-Bit
27C210
40-pin
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27C1100
Abstract: 27c1024-55 27C1024 MX27C1100 ups vh 2000 27C110 27C1024 equivalent MX27C1024QC-55
Text: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin out • 128K x 8 or 64K x 16 organization(MX27C1100, ROM • • • • • Operating current: 40mA • Standby current: 100uA • Package type:
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MX27C1100/27C1024
8/64K
MX27C1024,
MX27C1100,
100uA
MX27C1024
MX27C1024)
MX27C1100)
FEB/25/2000
AUG/20/2001
27C1100
27c1024-55
27C1024
MX27C1100
ups vh 2000
27C110
27C1024 equivalent
MX27C1024QC-55
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A276308AL-70
Abstract: A276308A-70 1N914 A276308A A276308A-55 A276308A-90 A276308AL-55
Text: A276308A 64K X 8 OTP CMOS EPROM Document Title 64K X 8 OTP CMOS EPROM Revision History History Issue Date Remark 0.0 Initial issue March 24, 2000 Preliminary 0.1 Change Program Verify VCC to 6.25V March 14, 2001 1.0 Final spec release December 17, 2001 Rev. No.
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A276308A
28-pin
32-PLCC
A276308A
A276308AL-70
A276308A-70
1N914
A276308A-55
A276308A-90
A276308AL-55
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27c1024
Abstract: 27C1024 equivalent EPROM sop 40 EPROM 40PIN 27C1100 MX27C1100
Text: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)
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MX27C1100/27C1024
8/64K
MX27C1024,
100uA
MX27C1100,
40pin
MX27C1024
MX27C1024)
MX27C1100)
FEB/25/2000
27c1024
27C1024 equivalent
EPROM sop 40
EPROM 40PIN
27C1100
MX27C1100
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32-PIN RAD-PAK FLAT PACKAGE
Abstract: No abstract text available
Text: 27C512T 512K 64K x 8-Bit OTP EPROM A5-A9 1024 x 1022 Memory Matrix x-Decoder A12-A16 I/O0 Y- Gating Input Data Control I/O15 Y - Decoder CE OE A0-A4 A10-A11 PGM VCC VPP VSS H H : High Threshhold Inverter FEATURES: DESCRIPTION: • 64K x 8-bit OTP EPROM organization
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27C512T
A12-A16
I/O15
A10-A11
27C512T
32-PIN RAD-PAK FLAT PACKAGE
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AMD 8051AH
Abstract: 8751H/8753H
Text: 8751H/8753H Single-Chip 8-Bit Microcontroller MILITARY INFORMATION • • • • Military Temperature Range - -5 5 to + 125°C Tc 4 K x 8 EPROM (8751); 8 K x 8 EPROM (8753) 128x8 RAM 64K bytes Program Memory space 64K bytes Data Memory space • • •
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8751H/8753H
8751H/8753H
128x8
16-bit
8751H
8753H
8751H,
8753H,
8051AH
AMD 8051AH
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MX27C1100
Abstract: No abstract text available
Text: Introduction Selection Guide MX27C1100/27C1024 1M-BIT 128K x 8/64K x 16 CMOS EPROM FEATURES • 64K x 16 organization(MX27C1024, JEDEC pin out) • 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/85/100/120/150 ns
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MX27C1100/27C1024
8/64K
MX27C1024,
MX27C1100,
40pin
MX27C1100/1024
MX27C1100
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8751H
Abstract: ta 8751h 8753H variable oscillator Z1P21 4kx8 eprom
Text: 8751H/8753H Single-Chip 8-Bit Microcontroller MILITARY INFORMATION • • • • M ilitary Tem perature Range - - 5 5 to + 125°C Tc 4 K x 8 EPROM (8751); 8 K x 8 EPROM (8753) 1 2 8 x 8 RAM 64K bytes Program M em ory space 64K bytes Data M em ory space
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8751H/8753H
128x8
16-bit
8751H
8753H
8751H,
8753H,
12-MHz
12tCLCL
10tCLCL-133
ta 8751h
variable oscillator
Z1P21
4kx8 eprom
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ws57c257
Abstract: ws57c65 WS*57c257
Text: WAFER SCALE I N T E GR A T I O N 3^E D B T S 3 T b cìa QQOObbT 7 H IlilA F WS57C210M PRELIMINARY WAFERS CALE INTEGRATION, INC. 1 Meg 64K x 16 EPROM MODULE KEY FEATURES • Fast Programming • High-Density 64K x 16 CMOS EPROM Module — • Utilizes Four WS57C256F High-Speed
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WS57C210M
WS57C256F
WS57C65
WS57C257
WS57C210M
576-bit
Only3-119
WS57C210M-55R
WS57C210M-70R
ws57c257
ws57c65
WS*57c257
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M27C210
Abstract: No abstract text available
Text: inte M27C210 1M 64K x 16) WORD-WIDE HIGH-SPEED CMOS EPROM • JEDEC Approved EPROM Pinout — 40-Pin DIP ■ Fast Programming — Quick-Pulse Programming ■ Complete Upgrade to Higher Densities Algorithm ■ Versatile EPROM Features — CMOS and TTL Compatibility
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M27C210
40-Pin
M27C210
576-bit
M27210
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Untitled
Abstract: No abstract text available
Text: NM27C520 524,288-Bit 64K x 8 Multiplexed Addresses/Outputs OTP CMOS EPROM General Description Features The NM27C520 is a high performance 512K CMOS one-time programmable read only memory (EPROM) manufactured using Fairchild's proprietary CMOS AMG EPROM technology for an
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NM27C520
288-Bit
NM27C520
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NM27LV210
Abstract: V44A
Text: NM27LV210 1,048,576-Bit 64K x 16 Low Voltage EPROM General Description Features The NM27LV210 is a high performance Low Voltage Electrical Programmable read only memory. It is manufactured using Fairchild’s latest EPROM technology. This technology allows the
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NM27LV210
576-Bit
NM27LV210
V44A
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27L512 eprom
Abstract: No abstract text available
Text: ADVANCED INFORMATION MX27L512 512K-BIT [64K x 8] CMOS EPROM FEATURES • 64K x 8 organization • Completely TTL compatible • Wide voltage range, 2.7V to 3.6V • Operating current: 10mA@ 3.6V, 5MHz • +12.5V programming voltage • Standby current: 10uA
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MX27L512
512K-BIT
120/150/200/250ns
MX27L512
512K-bit,
PM0256
MX27L51
28-TSOP
28-SOP
27L512 eprom
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M27G512
Abstract: 27G512
Text: January 1998 S E M IC O N D U C T O R FM27C512-L 524,288-Bit 64K x 8 Low Power Fast EPROM General Description The FM27C512 is a low-power 512Kbit, 5V-only one-timeprogrammable (OTP) read-only memory (EPROM), orga nized into 64K words with 8 bits per word. Any byte can be
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FM27C512-L
288-Bit
FM27C512
512Kbit,
256Kb
M27G512
27G512
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Untitled
Abstract: No abstract text available
Text: January 1998 S E M IC O N D U C T O R FM 27LV512-L 524,288-B it 64K x 8 Low Voltage, Low Pow er EPROM General Description The FM27LV512 is a low voltage, low-power 512Kbit, 3.3Vonly one-time-programmable (OTP) read-only memory (EPROM), organized into 64K words with 8 bits per word.
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FM27LV512-L
288-Bit
27LV512-L
288-B
FM27LV512
512Kbit,
150ns,
256Kb
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MX27L512MC-12
Abstract: MX27L512MC12 IN3064 MX27L512
Text: Introduction ADVANCED INFORMATION MX27L512 512K-BIT 64K x 8 CMOS EPROM FEATURES • • • • • • • • • 64K x 8 organization Wide voltage range, 2.7V to 3.6V +12.5V programming voltage Fast access time: 120/150/200/250ns Totally static operation
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MX27L512
512K-BIT
120/150/200/250ns
MX27L512
512K-bit,
MX27L512MC-12
MX27L512MC12
IN3064
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PDF
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Untitled
Abstract: No abstract text available
Text: 27C512 Microchip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (electrically) P rogramm able Read Only Memory. The — 90ns access tim e available device is organized into 64K words by 8 bits (64K bytes).
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27C512
27C512
100nA
DS110061-7
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M27C512
Abstract: PDIP28 PLCC32 m27c512 PLCC32
Text: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.
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M27C512
FDIP28W
PDIP28
PLCC32
TSOP28
M27C512
PDIP28
PLCC32
m27c512 PLCC32
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NMC27C64QE150
Abstract: NMC27C64Q
Text: November 1993 Semiconductor NMC27C64 65,536-Bit 8192 x 8 CMOS EPROM General Description Features The NMC27C64 is a 64K UV erasable, electrically repro grammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turn
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NMC27C64
536-Bit
NMC27C64Q
28-pin
NMC27C64QE150
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MX26C512AC-15
Abstract: No abstract text available
Text: MX26C512A 512K-BIT [64K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • • • • • • • 64K x 8 organization +5V operating power supply +12.75V program/erase voltage Electric erase instead of UV light erase Fast access time: 70/90/100/120/150 ns
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MX26C512A
512K-BIT
100uA
MX26C512A
512K-bit,
MX26C512AC-15
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