EQUIVALENT OF 1AM Search Results

EQUIVALENT OF 1AM Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003
TMP89FS60BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003
TMP89FM82DUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D

EQUIVALENT OF 1AM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
LMBT3904LT1G Abstract: equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel	Original	LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 LMBT3904LT1G equivalent of 1AM 1am equivalent 1N916 1AM marking transistor sot-23 Marking 1am 1aM sot-23 transistor	PDF
1AM marking transistor Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel	Original	LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape OT-23 1AM marking transistor	PDF
marking code SOD Abstract: schottky marking code A6 Text: Z2PK106 1Amp Low VF Schottky Barrier Diode 60V - Z2PAK OUTLINE DIMENSIONS FEATURES Case : Z2PAK Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability	Original	Z2PK106 50mVP-P marking code SOD schottky marking code A6	PDF
Z1PK104 Abstract: No abstract text available Text: Z1PK104 1Amp Low VF Schottky Barrier Diode 40V - Z1PAK OUTLINE DIMENSIONS FEATURES * Halogen-free type Unit : mm Case : Z1PAK * Compliance to RoHS product 0.05 Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF	Original	Z1PK104 OD-323 50mVP-P	PDF
SOD123 A10 Abstract: SOD-123 a10 Text: Z2PK110 1Amp Low VF Schottky Barrier Diode 100V - Z2PAK OUTLINE DIMENSIONS FEATURES * * * * * * Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability	Original	Z2PK110 50mVP-P SOD123 A10 SOD-123 a10	PDF
z3pk1045 Abstract: zpak Text: Z2PK115 1Amp Low VF Schottky Barrier Diode 150V - Z2PAK OUTLINE DIMENSIONS FEATURES Case : Z2PAK Halogen-free type Compliance to RoHS product Lead less chip form, no lead damage Low power loss, High efficiency High current capability, low VF Plastic package has Underwriters Laboratory Flammability	Original	Z2PK115 50mVP-P z3pk1045 zpak	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LMBT3904LT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT3904LT1G 1AM 3000/Tape & Reel LMBT3904LT3G 1AM 10000/Tape & Reel	Original	LMBT3904LT1G 3000/Tape LMBT3904LT3G 10000/Tape	PDF
transistor marking 1am Abstract: No abstract text available Text: TO SH IB A RN1412,RN1413 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN 1Am 17 1 3v r m g uRm N u -m 1u A•■ u m u 'm m Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. + 0.5 3.5-as ■ I 0.ÍÍ5	OCR Scan	RN1412 RN1413 RN2412, RN2413 RN1412 transistor marking 1am	PDF
dp07dp Abstract: LT100 1AM Y Text: u im TECHNOLOGY _LTlO O l Precision O peration al Am plifier D C S C R IP TIO n FCRTURCS • Guaranteed L o w Offset Voltage T h e L T 1 0 0 1 significantly a d v a n c e s the s ta te -o f-th e - LT10 0 1AM 1 5\|iV m ax LT1001C 60\|iV m ax	OCR Scan	LT1001C 152mm) dp07dp LT100 1AM Y	PDF
GREENCONN Abstract: GSEB263-30 EIA-364-13B SCSI-68 EIA-364-D 364D EIA-364-31 GSEB263 GSEB263-A02 31pin D connector Text: REV. 02 LOCAS. DESCRIPTION & £ m # t B & 3 -p DATE i n « DRAWN 2 0 0 8 .8 .1 8 tf Specifications C urrent Rating: 1Amp Insulation Resistance: 1000M Min. D ielectric W ithstanding: 300VV\AC C o n ta ct Resistance: 20 m Max. O perating Temperature:-4CV\C to + 1 0 5 ‘ C	OCR Scan	1000M 300VV\AC 31-PIN GSEB263 GREENCONN GSEB263-30 EIA-364-13B SCSI-68 EIA-364-D 364D EIA-364-31 GSEB263 GSEB263-A02 31pin D connector	PDF
DIGITAL GATE EMULATOR USING 8085 Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S	OCR Scan	AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent	PDF
ul 94 v2 Abstract: No abstract text available Text: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION R 1G H T S 20 LOC RE V I S I ONS D I ST RESERVED. LTR DESCR I PTION E C R - 0 9 - 0 I I 60 I AU 3.25 . 1 OF A 24.26 c /2\ 0.76 •^3- /3\	OCR Scan	09MAY2002 09MAY2002 ul 94 v2	PDF
HSMS-0002 Abstract: HSMS-0003 5082-0024 5082-0087 5082-2713 5082-0097 Text: HÉULETT-PACKARDn C MP N T S HEWLETT PACKARD 5 OE D 4H475A4 SCHOTTKY BARRIER CHIPS FOR HYBRID INTEGRATED CIRCUITS OOOSSTf l 5082-0009 5082-0013 5082-0023 5082-0024 5082-0029 5082-0041 5082-0087 5082-0097 S 5082-9891 HS MS-0001 HSMS-0011 HSMS-0002 HSMS-0012	OCR Scan	4H475A4 MS-0001 HSMS-0011 HSMS-0002 HSMS-0012 HSMS-0003 HSMS-0013 HSMS-00XX approximately280 5082-0024 5082-0087 5082-2713 5082-0097	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x	PDF

Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x	PDF
tle20741 Abstract: TLE2071 TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426 Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x tle20741 TLE2071 TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TL07x	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x	PDF
TLE20741 Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x TLE20741	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x	PDF
Untitled Abstract: No abstract text available Text: TLE207x, TLE207xA EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181C − FEBRUARY 1997 − REVISED DECEMBER 2009 D Direct Upgrades to TL05x, TL07x, and D D TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/ s) Than TL07x	Original	TLE207x, TLE207xA SLOS181C TL05x, TL07x, TL08x TL07x TLE207x	PDF

EQUIVALENT OF 1AM Search Results

EQUIVALENT OF 1AM Result Highlights (5)

EQUIVALENT OF 1AM Datasheets Context Search

LMBT3904LT1G

1AM marking transistor

marking code SOD

Z1PK104

SOD123 A10

z3pk1045

Untitled

transistor marking 1am

dp07dp

GREENCONN

DIGITAL GATE EMULATOR USING 8085

ul 94 v2

HSMS-0002

Untitled

Untitled

Untitled

tle20741

Untitled

Untitled

Untitled

TLE20741

Untitled

Untitled

Untitled