Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    EQUIVALENT TRANSISTOR 1970 Search Results

    EQUIVALENT TRANSISTOR 1970 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR 1970 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J300 Siliconix

    Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note
    Text: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier


    OCR Scan     		PDF

    DA 2688

    Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
    Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055


    OCR Scan     		TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688 PDF

    2sc1970

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2 SC 1970 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio applications. 9.1 ± 0.7 FEATURES Dimensions in mm


    OCR Scan     		2SC1970 2sc1970 PDF

    equivalent transistor TIP3055

    Abstract: 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor
    Text: t e x a s T n s T ìT ^ ìo p I r -8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR r - 1 ? - / 3 DEC EM BER 1970 - REVISED OCTOBER 1884 • Designed for Complementary U se with TIP2955 • 90 W at 25° C C ase Temperature


    OCR Scan     		TIP3055 TIP2955 2N3055 T0-218AA 7S265 Ttil72ti 37D0C1 equivalent transistor TIP3055 2N3055 transistor equivalent C2688 TIP3055 NPN power transistor TIP3055 equivalent transistor 2n3055 tip3055 equivalent C-2688 2N3055 equivalent transistor c2688 transistor PDF

    Design Note 127

    Abstract: dbx 202C VCA DBX 2180 dbx 2150 DBX 202 DBX 2181 dbx vca dbx 202c dbx 2001 VCA DBX2150
    Text: 1 THAT Corporation Design Note 127 Upgrading Modular VCAs The appearance of the first modular VCAs in the 1970s dramatically accelerated the field of fader automation. While the performance of those early VCAs is rather lacking by today’s standards, many of the early SSL and Quad-8 consoles built during that era are still in


    Original     		1970s Design Note 127 dbx 202C VCA DBX 2180 dbx 2150 DBX 202 DBX 2181 dbx vca dbx 202c dbx 2001 VCA DBX2150 PDF

    19Sg

    Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
    Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.


    Original     		MIL-S-19500/65B 19500/65A 2N388. UIL-S-19500165B 514AD 19Sg WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR PDF

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide PDF

    tip 31

    Abstract: c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent
    Text: "TEXAS INSTR -COPTÒF ^2 »E 0Q3b?ti0 8 9 0 1 7 2 6 TEXAS INSTR <OPTO 62C 3 ó 7 60 TIP 31, TIP31 A , TIP 31B, TIP 31 C , T1P31D, TIP 31 E, TIP31F N-P-N SILICON POWER TRAN SISTO RS D ECEM BER 1970 - R EV ISED O CTOBER 1984 40 W at 2 5 ° C C ase Temperature


    OCR Scan     		TIP31 T1P31D, TIP31F T0-22DAB tip 31 c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent PDF

    smd transistor 7D

    Abstract: Horizontal Transistor P-DSO-20 mk 22 smd
    Text: A Multichannel Power Switch – An Important Step in the Miniaturization of Electronic Systems Over recent years, the planned application of IC technologies has opened up new opportunities for the development and manufacture of power semiconductors; for example,


    Original     		1970s. P-DSO-28 smd transistor 7D Horizontal Transistor P-DSO-20 mk 22 smd PDF

    erg inc

    Abstract: 12 volt dc to 220 volt ac inverter dc ac inverter 1000 watt triac inverter inverter source code dc to ac inverter single phase inverters circuit diagram dc to ac inverter circuit diagram 12 volt dc to 220 volt ac inverter 1000 watts 220 volt ac to 12 volt dc inverter
    Text: Smart Forcetm Inverter Application Note to ac inverter and the electroluminescent lamp EL lamp it was designed to power. They function together as a compensating integrated system. INTRODUCTION Endicott Research Group, Inc. has been designing and manufacturing “Smart Force” dc to


    Original     		PDF

    army sc-c-179495

    Abstract: 2N426 2N428 germanium transistor ac 127 STT 433
    Text: MIL-S-19500/44D •lEJter sh 1970 SUPERSEDING MIL-S-19500/44C 9 April 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N428 This specification is mandatory fo r use by all De­ partments and Agencies o f the Department o f Defense.


    OCR Scan     		MIL-S-19500/44D MIL-S-19500/44C 2N428 000-hour MIL-S-19500, MIL-S-19500 army sc-c-179495 2N426 2N428 germanium transistor ac 127 STT 433 PDF

    HP8970

    Abstract: transistor s parameters noise TRANSISTOR noise figure measurements Cas23
    Text: IEEE BCTM 12.1 Modelling the Correlation in the High-Frequency Noise of Hetero-junction Bipolar Transistors using Charge-Partitioning J. C. J. Paasschens, R. J. Havens, and L. F. Tiemeijer Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands


    OCR Scan     		ED-31, ED-34, HP8970 transistor s parameters noise TRANSISTOR noise figure measurements Cas23 PDF

    Widlar

    Abstract: lm12 op amp 150W TRANSISTOR AUDIO AMPLIFIER 800W TRANSISTOR npn 800w inverter AN-446B frederiksen Three-Five Widlar AN-21 LM12
    Text: National Semiconductor Application Note 446B April 1998 Robert J. Widlar Apartado Postal 541 steady-state conditions increases guaranteed power ratings by several times when compared to older techniques. At the same time, it dramatically lowers the peak junction temperature with worst-case fault conditions.


    Original     		PDF

    600W TRANSISTOR AUDIO AMPLIFIER

    Abstract: Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995
    Text: National Semiconductor Application Note 446B 446B October 1987 Robert J Widlar Apartado Postal 541 Puerto Vallarta Jalisco Mexico Mineo Yamatake National Semiconductor Corp Santa Clara California Abstract The standard junction-isolated power process has been modified by the addition of polycrystalline-film resistors to solve the topological problems encountered in


    Original     		01-percent 600W TRANSISTOR AUDIO AMPLIFIER Widlar h9301 pnp 150w darlington transistor to3 package 800W TRANSISTOR npn 800w inverter AN-446B LM12 446B C1995 PDF

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4 PDF

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application PDF

    k3hb-vlc

    Abstract: K3HB-V K3HB-XVD K3HB-S sewing waterproof wireless water level sensor plc omron
    Text: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be


    Original     		75-344-7080/Fax: NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: 0805-1M k3hb-vlc K3HB-V K3HB-XVD K3HB-S sewing waterproof wireless water level sensor plc omron PDF

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


    OCR Scan     		108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    K3HB-V

    Abstract: flk3b k3hb-vlc omron load cell k3hb-x manual K3HB
    Text: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be


    Original     		10-8391-3005/Fax: 75-344-7080/Fax: NL-2132 2356-81-300/Fax: 0205-1M K3HB-V flk3b k3hb-vlc omron load cell k3hb-x manual K3HB PDF

    k3hb-vlc

    Abstract: hr31 humidity sensor K32-BCD K3HB-S k3hb-x manual K3HB-XVD K3HB omron load cell K33-B OMRON E5
    Text: Digital Indicators K3HB Series Distinct by Design, Distinguished in Performance K3HB-H K3HB-S K3HB-X K3HB-V Features Red-Green Display Allows Easy Recognition of Judgment Results Short Body with Depth of Only 95 mm from Behind the Front Panel • The measurement value display can be set to switch between red and green in accordance with the status of comparative outputs. This means that the status can be


    Original     		75-344-7080/Fax: NL-2132 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: 0805-1M k3hb-vlc hr31 humidity sensor K32-BCD K3HB-S k3hb-x manual K3HB-XVD K3HB omron load cell K33-B OMRON E5 PDF

    Zener Diode c62

    Abstract: how to test Triode Thyristors thyristor testing thyristor circuits application of thyristor
    Text: TISP Terms and Letter Symbols Introduction Thyristor-based overvoltage protectors for telecom systems were first introduced in the late 1970s. The characteristics of thyristor SPDs Surge Protective Devices are very different than the normal SCR (Silicon Controlled Rectifier) and TRIAC (Triode for AC Control) type


    Original     		1970s. Zener Diode c62 how to test Triode Thyristors thyristor testing thyristor circuits application of thyristor PDF

    all mosfet equivalent book

    Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
    Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2


    Original     		AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion PDF

    zero crossing detector

    Abstract: LM1113 DTL or TTL integrated logic circuits LM111 LM710 zero crossing IC LM111 equivalent LB-12 LM106 Widlar
    Text: National Semiconductor Linear Brief 12 Robert J. Widlar January 1970 The IC voltage comparators available in the past have been designed primarily for low voltage, high speed operation. As a result, these devices have high input error currents, which limit their usefulness in high impedance circuitry. An IC is


    Original     		PDF