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    EQUIVALENT TRANSISTOR OF TB TRANSISTOR Search Results

    EQUIVALENT TRANSISTOR OF TB TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR OF TB TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT SCHEMATIC

    Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,


    Original     		PDF AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541

    d2 transistor

    Abstract: motorola transistor cross reference motorola bipolar transistor GUIDE AN1543 Electronic Lamp Ballast Design high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUD44D2
    Text: MOTOROLA Order this document by AN1577/D SEMICONDUCTOR APPLICATION NOTE AN1577 Motorola's D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. OTERO Application Engineer – MOTOROLA – Toulouse INTRODUCTION ture are probably the most critical issues the designer has to


    Original     		PDF AN1577/D AN1577 d2 transistor motorola transistor cross reference motorola bipolar transistor GUIDE AN1543 Electronic Lamp Ballast Design high power bipolar transistor selection motorola diode cross reference an1543 npn pnp transistor bipolar cross reference AN1577 BUD44D2

    motorola transistor cross reference

    Abstract: transistor aaa zero bias diode saturable core oscillator motorola diode cross reference an873/D
    Text: MOTOROLA Order this document by AN1577/D SEMICONDUCTOR APPLICATION NOTE AN1577 Motorola's D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. OTERO Application Engineer – MOTOROLA – Toulouse ture are probably the most critical issues the designer has to


    Original     		PDF AN1577/D AN1577 AN1577/D motorola transistor cross reference transistor aaa zero bias diode saturable core oscillator motorola diode cross reference an873/D

    Diode HER 507

    Abstract: an1543 AN1577 on semiconductor AN873 saturable core oscillator MJE18604D2 electronic ballast with npn transistor BUD43B BUD44D2 BUL44D2
    Text: AN1577/D ON Semiconductor’s D2 Series Transistors for Fluorescent Converters Prepared by: Pascal M. Otero ON Semiconductor Applications Engineer http://onsemi.com APPLICATION NOTE INTRODUCTION Switching bipolar transistors are very popular in the fluorescent ballast field where they provide cheap designs.


    Original     		PDF AN1577/D Diode HER 507 an1543 AN1577 on semiconductor AN873 saturable core oscillator MJE18604D2 electronic ballast with npn transistor BUD43B BUD44D2 BUL44D2

    difference between IGBT and MOSFET IN inverter

    Abstract: IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink
    Text: AN1541/D Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. http://onsemi.com APPLICATION NOTE INTRODUCTION As power conversion relies more on switched applications, semiconductor manufacturers need to create


    Original     		PDF AN1541/D r14525 difference between IGBT and MOSFET IN inverter IGBT SCHEMATIC use igbt for 3 phase induction motor rectifier pwm igbt DATA SHEET OF IGBT mosfet base induction heat circuit POWER BJTs what is THERMAL RUNAWAY IN RECTIFIER MOSFET power transistor bjt 1000 a n mosfet depletion 1A sink

    C5750X7R1H106M

    Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751
    Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20LS-75 ACPR400k ACPR600k BLF6G20LS-75 C5750X7R1H106M C3225X7R1H155M RF35 SM270 TRANSISTOR 751

    C5750X7R1H106M

    Abstract: SM270 BLF6G20-75 C3225X7R1H155M RF35
    Text: BLF6G20-75 Power LDMOS transistor Rev. 01 — 6 March 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		PDF BLF6G20-75 ACPR400k ACPR600k BLF6G20-75 C5750X7R1H106M SM270 C3225X7R1H155M RF35

    BLF6G20

    Abstract: BLF6G20-75 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752
    Text: BLF6G20-75; BLF6G20LS-75 Power LDMOS transistor Rev. 02 — 9 February 2009 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-75; BLF6G20LS-75 ACPR400k ACPR600k BLF6G20-75 BLF6G20LS-75 BLF6G20 C3225X7R1H155M C5750X7R1H106M RF35 SM270 gp 752

    MTP50N05E

    Abstract: transistor MTP50N05E MTP50N05 MTP75N05HD equivalent MTP50N06E low voltage power transistor HDTMOS MTP50N05E equivalent MTP75N05HD RFG70N06
    Text: EB201/D High Cell Density MOSFETs Low On–Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of


    Original     		PDF EB201/D r14525 MTP50N05E transistor MTP50N05E MTP50N05 MTP75N05HD equivalent MTP50N06E low voltage power transistor HDTMOS MTP50N05E equivalent MTP75N05HD RFG70N06

    Untitled

    Abstract: No abstract text available
    Text: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio


    Original     		PDF 2SC1946A 2SC1946A i10dB 175MHr 175MHz,

    MJ150BX120

    Abstract: DS3738 NPN Transistor 600V
    Text: Order this data sheet by NlJ150BX120/D MOTOROLA SEMKXMIDLJCTOR TECHNICAL DATA NPN Silicon Power Transistor IMJI 50BXI 20 ,p~prf: These power environments ● Energy ● Isolated transistors found Efficient ● Low Thermal ● Internal ● High in switchina


    Original     		PDF NlJ150BX120/D 50BXI Y145M, MJ150BX120 DS3738 NPN Transistor 600V

    irf44z

    Abstract: 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics
    Text: AN1520/D HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications http://onsemi.com Prepared by: Scott Deuty, Applications Engineer APPLICATION NOTE INTRODUCTION A new technology, HDTMOS, was recently introduced which addresses the needs of today’s power transistor users.


    Original     		PDF AN1520/D r14525 irf44z 3525 PWM MOSFET and parallel Schottky diode ic 3525 pwm application dc to dc converter FLUKE 79 manual 5n03 ic 3525 pwm application IRFZ44 data MTP75N03HDL Coiltronics

    AGR21060EF

    Abstract: 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060E AGR21060EU C15B material sheet C15A
    Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access


    Original     		PDF AGR21060E AGR21060E AGR21060EU AGR21060EF AGR21060EF 100B8R2JCA500X CDM 07 C14A JESD22-C101A R210 AGR21060EU C15B material sheet C15A

    Untitled

    Abstract: No abstract text available
    Text: DTB114EK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • available in an SMT3 (SMT, SC-59) package • package marking: DTB114EK; F14 • a built-in bias resistor allows inverter circuit configuration without external input resistors


    OCR Scan     		PDF DTB114EK SC-59) DTB114EK; DTB114EK

    samsung 217

    Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
    Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR


    OCR Scan     		PDF 0QQ7t41 KSD5002 GQG77fe samsung 217 samsung tv NPN Transistor 1A 800V to - 92 ksd5002

    Untitled

    Abstract: No abstract text available
    Text: DTB163TK/DTB163TS/DTB163TF DTB163TL/DTB163TA/DTB163TV h 7 > v 7 . £ /T r a n s is to r s D TB 163TK /D TB 163TS /D TB 163TF D TB 163TL/D TB 163TA /D TB 163TV T - / W h 7 > '> ‘ 7 i f fifilf liK h7 ^-/Transistor Switch Digital Transistors Includes Resistors


    OCR Scan     		PDF DTB163TK/DTB163TS/DTB163TF DTB163TL/DTB163TA/DTB163TV 163TK 163TS 163TF 163TL/D 163TA 163TV TB163T

    2N6985

    Abstract: lg system ic transistor ac 125 equivalent
    Text: MOTOROLA SC XSTRS/R F b'iE » b3b?25M D1DD120 703 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 400 MHz frequency range.


    OCR Scan     		PDF b3b72SM 2N6985 G1GD123 2N6985 lg system ic transistor ac 125 equivalent

    transistor kn

    Abstract: SEM SIC inverter B123Y
    Text: DTB123YS DTB123YV Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm available in SP T (SC-72) and ATV packages DTA123YS (SPT) a built-in bias resistor allows inverter circuit configuration without external input resistors / ru ! bias resistor consists of a thin-film


    OCR Scan     		PDF DTB123YS DTB123YV SC-72) DTA123YS DTA123YV DTB123YS, DTB123YV transistor kn SEM SIC inverter B123Y

    TRANSISTOR J214

    Abstract: VK200-20-4B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 470 MHz Characteristics —


    OCR Scan     		PDF 16-Volt MRF644 b3b7255 TRANSISTOR J214 VK200-20-4B

    transistor MARKING NC KRC

    Abstract: TRANSISTOR MARK NB
    Text: SEMICONDUCTOR KRC651E~KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.


    OCR Scan     		PDF KRC651E KRC656E KRC652E KRC653E KRC654E KRC655E KRC651E-KRC656E KRC655E transistor MARKING NC KRC TRANSISTOR MARK NB

    Ultrasonic Distance lc

    Abstract: NPN Monolithic Transistor Pair
    Text: DIONICS INC. 6 5 R U SH M O R E ST., W E S TB U R Y , N .Y . 11590 Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 • 4880 Dl 4045-1 516 « 9 9 7 * 7474 NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100% PROBED 20.0 I«—4 0 . — »I


    OCR Scan     		PDF 00GCI430 00D0431 Ultrasonic Distance lc NPN Monolithic Transistor Pair

    7474 ic chip

    Abstract: 7474 ic IC 7414 IC 7474 D1404 7474 NPN Monolithic Transistor Pair Monolithic Transistor Pair ultrasonic bond Ultrasonic Distance lc
    Text: DIONICS INC. 6 5 R U SH M O R E ST., W E S TB U R Y , N .Y . 11590 Dl 4044 • 4878 Dl 4100 • 4879 Dl 4045 • 4880 Dl 4045-1 516 « 9 9 7 * 7474 NPN SILICON MATCHED PAIR TRANSISTOR CHIPS WITH MATCHING CHARACTERISTICS 100% PROBED 20.0 I«—4 0 . — »I


    OCR Scan     		PDF 00DD430 00D0431 7474 ic chip 7474 ic IC 7414 IC 7474 D1404 7474 NPN Monolithic Transistor Pair Monolithic Transistor Pair ultrasonic bond Ultrasonic Distance lc

    DTB122JK

    Abstract: No abstract text available
    Text: S ÿ > v T . £ /Transistors D TB X V DTB122JK JK 1 2 2 2 JU h ? S ia r t Ü E h 7 > - > 'X i! Digital Transistors (Includes Resistors) ^/Transistor Switch 1Wfé \füE]/Dimensk>ns (Unit : mm) • && 1) / ' ' ' T T ' X f f l W S f i i Î r t i S L T t ' - S Î ;


    OCR Scan     		PDF DTB122JK DTB122JK -500m -200m --50m

    b101 transistor

    Abstract: No abstract text available
    Text: 2DI100M-050 iooa : Outline Draw ings POWER TRANSISTOR MODULE : Features ¡ 8 B h FE High DC Current Gain High Speed Sw itching : A p p lic a tio n s i / l f f i - O ' 1! —9 General Purpose Inverter U ninterruptible Power Supply Servo & Spindle Drive fo r NC M achine Tools


    OCR Scan     		PDF 2DI100M-050( I95t/R89) b101 transistor