ERICSSON RF POWER TRANSISTOR Search Results

ERICSSON RF POWER TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

ERICSSON RF POWER TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TRANSISTOR cBC 415 Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details	Original	TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf	PDF
1415 ic Abstract: 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: ERICSSON ^ PTB 20173 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and	OCR Scan	0093X2 G-200 1415 ic 33 pf capacitor PTB20173 RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
RF NPN POWER TRANSISTOR 3 GHZ Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: ERICSSON ^ PTE 20173* 60 Watts, 1.4-1.5 GHz RF Power Transistor Description The 20173 is a preliminary class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across 1.4 to 1.5 GHz frequency band. It is rated at 60 watts minimum output power and	OCR Scan	G-200 RF NPN POWER TRANSISTOR 3 GHZ RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
transistor 20201 Abstract: jarvis Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20029 1.5 Watts, 420 - 470 MHz UHF RF Power Transistor Key Features Description The 20029 is a class AB, NPN, common emitter RF Power Transistor intended for 24 VDC operation across the 420470 MHz frequency band. It is rated at 1.5 Watts minimum	OCR Scan	200mA	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor Description The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier	OCR Scan		PDF
tic6064 Abstract: 850-960MHz Text: ERICSSON $ PTB 20167 60 Watts, 850-960 MHz RF Power Transistor D escription The 20167 is an NPN, common base RF power transistor intended for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum output power, it is specifically designed for class C power amplifier	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20003 4 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20003 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the 915-960 MHz frequency band. It is rated at 4 Watts minimum output power	OCR Scan	915-960MHz)	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20191 12 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.	OCR Scan		PDF
L450A Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR Text: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power	OCR Scan	G-200. BCP56 L450A NPN transistor 5 watts Ericsson RF POWER TRANSISTOR	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20174 90 Watts, 1400-1600 MHz RF Power Transistor Description The 20174 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1400 to 1600 MHz frequency band. Rated at 90 watts minimum output power, it may be used for	OCR Scan	5801-PC	PDF
transistor Pout 5W Abstract: No abstract text available Text: ERICSSON ^ PTB 201 59 5 Watts, 900 MHz RF Power Transistor Preliminary Description Key Features The 20159 is NPN, common emitter RF Power Transistor intended for 24VDC operation across the 850-960 MHz frequency band. It is rated at 5 Watts minimum output power and may be used for	OCR Scan	24VDC 900MHz) transistor Pout 5W	PDF
TRANSISTOR 185 Abstract: Ericsson RF POWER TRANSISTOR Text: ERICSSON ^ PTE 20124* 40 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular	OCR Scan	BAV99 TRANSISTOR 185 Ericsson RF POWER TRANSISTOR	PDF

transistor tic 226 Abstract: No abstract text available Text: ERICSSON ^ PTB 20220 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,	OCR Scan		PDF
20224 Abstract: No abstract text available Text: ERICSSON ^ PTB 20017 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band. Rated at 150 watts minimum output power, it	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20004 50 Watts, 860 - 900 MHz Cellular Radio RF Power Transistor Description Key Features The 20004 is a class AB, NPN, common emitter RF Power Transistor intended for 25 VDC operation across the860-900 MHz frequency band. It is rated at 50 Watts minimum output power	OCR Scan	the860-900 200mA	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ E 20080* 25 Watts, 1.6-1.7 GHz RF Power Transistor Description The 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: ERICSSON 9 PTB 20135 85 Watts,925-960 MHz Cellular Radio RF Power Transistor Description Key Features The 20135 is a class AB, NPN common emitter RF Power Transistor intended for 26 VDC operation across 925-960 MHz frequency band. It is rated at 85 Watts minimum output power	OCR Scan	-30dBc 960MHz)	PDF
20191 Abstract: No abstract text available Text: ERICSSON $ PTB 20191 12 Watts,1.78 -1.92 GHz RF Power Transistor Preliminary Key Features Description The 20191 is a class AB RF Power Transistor intended for 26 VDC operation across 1.78-1.92 GHz frequency band. It is rated at 12 Watts minimum output power (CW) or 15 Watts output power (PEP).	OCR Scan	100mA 20191	PDF
Untitled Abstract: No abstract text available Text: ERICSSON PTB 20074 14 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Key Features Description The 20074 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 14 Watts minimum	OCR Scan	26Vdc,	PDF
InMarSat power Abstract: No abstract text available Text: ERICSSON ^ PTB 20079 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor Description The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10	OCR Scan		PDF
26VDC Abstract: No abstract text available Text: ERICSSON ^ PTB 20046 1 Watts, 1477-1501 MHz Cellular Radio RF Power Transistor Description Key Features The 20046 is a class AB, NPN, common emitter RF Power Transistor intended for 26 VDC operation across the 14771501 MHz frequency band. It is rated at 1 Watts minimum	OCR Scan	26Vdc, 26VDC	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20095 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor Description The 20095 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power, it may be used for	OCR Scan		PDF

ERICSSON RF POWER TRANSISTOR Search Results

ERICSSON RF POWER TRANSISTOR Result Highlights (5)

ERICSSON RF POWER TRANSISTOR Datasheets Context Search

TRANSISTOR cBC 415

1415 ic

RF NPN POWER TRANSISTOR 3 GHZ

transistor 20201

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tic6064

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L450A

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transistor Pout 5W

TRANSISTOR 185

transistor tic 226

20224

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20191

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InMarSat power

26VDC

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