esm diodes
Abstract: ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390
Text: clamping zener diodes diodes zener ecreteuses THOMSON-CSF V BR * 'RM @ V rivi Unidirectional types 1mA) 4 KW ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM 111-15 111-18 111-22 111-27 111-33 111-39 111-47 111-56 111-68 111-82
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300/ts
CB-150
CB-34)
esm diodes
ESM 470
esm 30 450 v
ESM 650
esm 112-39
esm 200
cb33 p
112220
112180
esm 112 390
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ESM 310
Abstract: ESM 2200 ESM3004 ESM 3004 ESM 738 asi 4014 esm 850 IC 4011 esm3001 esm4016
Text: SCS-THOMSON GENERAL PURPOSE & INDUSTRIAL KfflDÊ @i[L[iÊra RÔDÊi POWER BIPOLAR MU 86 CB-478 CB-480 METAL SUPERSWITCH HIGH POWER TRANSISTORS Type NPN v CEO VcEV 'c m ptot v CE sat @ >c •b ‘d + ‘r ‘ r* •si* max max (m s ) (ms) (V) (V) (A) (W)
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CB-480
CB-478
ESM 310
ESM 2200
ESM3004
ESM 3004
ESM 738
asi 4014
esm 850
IC 4011
esm3001
esm4016
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DIODE REDRESSEMENT
Abstract: esm 310 BP ESM 310 ESM 346 diode ESM 15 diode 243 diode 243400 703AL ESM fe JEDEC to 243 ST
Text: S G SIC S -^THOMSON D 1I T lS I ia ? D D O a iO I ESM 243-50, R ESM 243-400, (R) V THOMSON-CSF DIVISION SEM ICONMJC1ÏURS OISCMT5 SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02309 D 7~‘ 0 J ' i / - FAST RECOVERY VrrM 6 0 -* 400 V
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DIODE REDRESSEMENT
Abstract: esm 310 BP 703AL diode ESM 15 ESM 355 D10SG JEDEC to 243 ST TNE 0235 GQG531S CB-262
Text: 1 S IC S G S -^THOMSON V D I T lS Iia ? D D O a iO I ESM 243-50, R ESM 243-400, (R) T H O M S O N -C S F DIVISION SEMICONMJC1ÏURS OISCMT5 SUPERSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES DIODES DE R E D R ESSEM EN T RAPID ES 59C 02309 D 7~‘ 0 J ' i /
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CB-210)
0D053b0
CB-19)
CB-428)
CB-244
DIODE REDRESSEMENT
esm 310 BP
703AL
diode ESM 15
ESM 355
D10SG
JEDEC to 243 ST
TNE 0235
GQG531S
CB-262
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diode ESM 245-1000
Abstract: ESM 310 esm diodes diode esm245 ESM245-1000 diode ESM 44 QQQ233Q ESM246 ESM245-100 AIO22
Text: S — T H O M S O N S I C I D • 7 ' 7 59C 0 2 3 2 3 O THOMSON-CSF C 1 2 ,:1 2 3 7 D T-03 2 3 2 3 fi -A.I ESM 245-50, R ESM 245-1000, (R) DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
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1/4-28UNF
310cm
CB-34)
diode ESM 245-1000
ESM 310
esm diodes
diode esm245
ESM245-1000
diode ESM 44
QQQ233Q
ESM246
ESM245-100
AIO22
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ESM750A
Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Text: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183
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BUX48
CB-19
CB-159
CB-19)
CB-159)
ESM750A
ESM750
esm952a
BUW38
ESM952
BUX40
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CB-33
Abstract: No abstract text available
Text: I 7=12^237 QQD2351 2 S G S-THOMSON 59C 02351 O D 7^ o 17 ' R T 5 . 1 T H O M S O N -C S F F 1 - * , 8 D IV IS IO N S EM IC O N DUCTE UR S DISCRETS E S M 7 G ü ^ a H IG H E F F IC IE N C Y FA ST R E C O V E rtV R E C T IF IE R S SUPERSWITCH REDRESSEURS R A PIDES A H A U T R E N D E M E N T
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QQD2351
CB-425)
CB-262)
CB-19)
CB-428)
CB-244
CB-33
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diode lt 0236
Abstract: thomson 237 DT 2 SiC IPM 237 thomson
Text: S G S— THOMSON *\ 5TC 0 I _ ¿> ï- ^ 3 59C 0 2 3 31 _ D ” O T H O M S O N -C S F DIVISION SEMICONDUCTEURS . Ü0QE3317 ESM 4116 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE Fe a tu r e s Soft recovery w ith lo w recovery charge. Fully characterised for operation up to 20 kHz,
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0QE3317
CB-425)
CB-262)
CB-262
CB-19)
CB-428)
CB-244
diode lt 0236
thomson 237 DT 2
SiC IPM
237 thomson
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diode esm
Abstract: No abstract text available
Text: S ic S G S—THOMSON « i D 1• T H O M S O N -C S F ? ci a ci 5 3 ? E S M MWieiAkl CCàil/*/MirM i m i mo DISCRETS DIVISION SEMICONDUCTEURS 000231b 2 4 4 -5 0 , R " " * ESM 244-600, (R) SU PER SW ITC H f a s t r e c o v e r y r e c t i f i e r d io d e s
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000231b
CB-262
CB-262)
CB-19)
CB-428)
CB-244
diode esm
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Untitled
Abstract: No abstract text available
Text: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
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CB-262
CB-262)
CB-19)
CB-428)
CB-244
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transistor ESM 16
Abstract: transistor ESM 30 transistor ESM 20N25 aesm16 esm 855 ESM16 16B0
Text: ESM 16 ESM 16 A ESM 16 B NPN SILICON TRANSISTORS, TRIPLE DIFFUSED TR AN S IS TO R S S IL IC IU M N P N , T R IP L E D IF F U S E S - High speed, high voltage, high power transistor Switching applications 10 A •c A p p lic a tio n s en co m m u ta tio n ^ to t
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CB-19
transistor ESM 16
transistor ESM 30
transistor ESM
20N25
aesm16
esm 855
ESM16
16B0
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BF272
Abstract: ampli lineaire AMPLI LINEAIRE FM Transistor BFR 96 if amplifier BF167 cb amplifier BF509 L 146 CB BF199
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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BF272
BF1300
CB-146
ampli lineaire
AMPLI LINEAIRE FM
Transistor BFR 96
if amplifier
BF167
cb amplifier
BF509
L 146 CB
BF199
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TRANSISTOR BC 213
Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
TRANSISTOR BC 213
TRANSISTOR BC 181
bf 239
BF 212 transistor
transistor bf 184
BF 184 NPN transistor
TRANSISTOR BC 212
TRANSISTOR BC 174
transistor BC 338
BF 184 transistor
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ESM thyristor
Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Text: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000
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CB-486
DFB51
ESM thyristor
thyristor disc Vrrm 20000
MDF656
esm 2000
thyristor disc Vrrm 2000
mu 86
452 thyristor
sgs Thomson Thyristor
DF 652
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diode ESM 15
Abstract: ESM diode 4120 038N CB-428
Text: STC 0 I S G S-THGMSON "V 7 ^ 2 3 7 0002337 3 f ~ _ O ESM 4120 T H O M S O N -C S F DIVISION SEMICONDUCTEURS 59C 023 37 D “J * ô & * ¿ 3 FAST RECOVERY RECTIFIER DIODE DIODE DE REDRESSEMENT RAPIDE FEATURES *F AV Soft recovery with low recovery charge.
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CB-425)
CB-262)
CB-262
i0840
CB-19)
CB-428)
CB-244
diode ESM 15
ESM diode 4120
038N
CB-428
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PT8740
Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Text: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72
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T8710
SD1238
2N5126
2N918
2N5642
BM100-28
MM1603
MRF633
SD1145
PT8717
PT8740
PT8811
replace for 2N918
PT9780
mrf245
THOMSON-CSF PRODUCTS
transistor pt4544
PT9788
PT8710
PT8828
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D 5038 Transistor Horizontal
Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching
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CB-69
14f4g
D 5038 Transistor Horizontal
amplificateur audio a base de transistor
transistor 2n 892 X1
amplificateur BF
transistor ST TYN 616
equivalent of transistor bul 38 da
bd 317 schema
transistor 3055 out hv
ESM214
Transistor bdy 58
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1n52408
Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which
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301PT1115
302PT1115
303PT1115
311PT1110
312PTI110
319PTI110
327PTI110
351PT1115
353PT1115
1n52408
1N52428 zener
SFC2311
78M12HM
21L02A
54175
IRS 9530 transistor
10116dc
BB105G
962PC
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3866S
Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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catalogue des transistors bipolaires de puissance
Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM
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222SG
Abstract: ups rectifier
Text: 1 S G S-THOMSON SIC D • 7 C12C1237 □□□Elää fc, o 1 H O M S O N -C S F B DIVISION SEMICONDUCTEURS DISCRETS Y T 7 2 0 0 , , r , 5 . - U 6 0 0 . R / ' O l J V W 1 FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES Formely number ESM 675
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CB-425)
CB-262)
CB-262
QDD53t
CB-19)
CB-428)
CB-244
222SG
ups rectifier
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON QUAD COMPARATOR INTERFACE CIRCUIT > MINIMUM HYSTERESIS VOLTAGE AT EACH INPUT: 0.3V . OUTPUT CURRENT : 15 mA . LARGE SUPPLY VOLTAGE RANGE : + 10V to + 35V • INTERNAL THERMAL PROTECTION . INPUT AND OUTPUT CLAMPING PROTEC TION DIODES. DESCRIPTION
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ESM1602Bis
ESM1602B
receiver280
ESM1602B
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c3v5
Abstract: Bf 417 g transistor A 6099 2N6101 2N6099 6101 JI40 N2468
Text: 2I\I 6099 NPN SILICON TRANSISTOR, HOMOBASE |^| g -j Q-| TR A N S IS TO R N P N S IL IC IU M , H O M O B A S E Compl. of ESM 141, ESM 142 • LF large signal power amplification A m plification B F grands signaux de puissance V - High current switching CEO
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2N6101
O-220
CB-117on
CB-117
c3v5
Bf 417 g transistor
A 6099
2N6101
2N6099
6101
JI40
N2468
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L290B
Abstract: L290 tacho L292 L291
Text: r= 7 SG S -THOMSON * 7 * . DO @K IlLi«(fl iD ® L290 TACHOMETER CONVERTER DESCRIPTION The L290, a monolithic LSI circuit in 16-lead inline plastic package, is intended for user with the L291 and L292 which together from a complete 3-chip DC motor positioning system for applications
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16-lead
L290/1/2
DIP-16
L290B
00b73b0
L290B
L290
tacho
L292
L291
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