vt1631
Abstract: IT8888G vt8237 via vt8237R Plus chipset south bridge ESM-CN700 it8888 VT1636 VT8237R PLUS VT1622A VT8237R
Text: ESM-CN700 Series Onboard VIA Eden V4 1 GHz SOM-ETX CPU Module User’s Manual 1st Ed – 26 October 2006 Part No. 2047274100R ESM-CN700 Series FCC Statement THIS DEVICE COMPLIES WITH PART 15 FCC RULES. OPERATION IS SUBJECT TO THE FOLLOWING TWO CONDITIONS:
|
Original
|
PDF
|
ESM-CN700
2047274100R
vt1631
IT8888G
vt8237
via vt8237R Plus chipset south bridge
it8888
VT1636
VT8237R PLUS
VT1622A
VT8237R
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC
|
Original
|
PDF
|
KDS121E
|
KDS121E
Abstract: transistor ESM 30
Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. Low Forward Voltage : VF=0.9V Typ. . B Fast Reverse Recovery Time : trr=1.6ns(Typ.). MAXIMUM RATING (Ta=25 CHARACTERISTIC
|
Original
|
PDF
|
KDS121E
KDS121E
transistor ESM 30
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ・Small Package : ESM. ・Low Forward Voltage : VF=1.0V Max. . MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VRM 20 V Reverse Voltage
|
Original
|
PDF
|
KDS221E
|
transistor ESM 30
Abstract: KDS142E marking DS
Text: SEMICONDUCTOR KDS142E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G H A 2 CHARACTERISTIC ) SYMBOL RATING UNIT VRM 20 V Reverse Voltage VR 20
|
Original
|
PDF
|
KDS142E
transistor ESM 30
KDS142E
marking DS
|
marking H1
Abstract: BAW56T
Text: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 V Continuous Forward Current
|
Original
|
PDF
|
BAW56T
marking H1
BAW56T
|
marking h2
Abstract: No abstract text available
Text: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 C MAXIMUM RATING (Ta=25℃) CHARACTERISTIC D 2 A FEATURES ・Small Package
|
Original
|
PDF
|
BAV70T
marking h2
|
104 esm
Abstract: No abstract text available
Text: ESM 765-100 → 800 FAST RECOVERY RECTIFIER DIODES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND IRM AT 100 °C UNDER USERS CONDITION APPLICATIONS MOTOR CONTROLS AND CONVERTERS SWITCH MODE POWER SUPPLIES
|
Original
|
PDF
|
O220AC
104 esm
|
diode esm
Abstract: No abstract text available
Text: SEMICONDUCTOR BAW56T TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.92V Typ. . : trr=1.6ns(Typ.). C MAXIMUM RATING (Ta=25℃) 3 1 SYMBOL RATING UNIT VRM 85 V Maximum (Peak) Reverse Voltage C MILLIMETERS
|
Original
|
PDF
|
BAW56T
diode esm
|
ESM 355
Abstract: esm power diodes esm diodes
Text: ESM 765PI-600/800 FAST RECOVERY RECTIFIER DIODES HIGH VOLTAGE CAPABILITY FAST AND SOFT RECOVERY THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF THE trr AND IRM AT 100 °C UNDER USERS CONDITIONS INSULATED Insulting voltage 2500 VRMS APPLICATIONS MOTOR CONTROLS AND CONVERTERS
|
Original
|
PDF
|
765PI-600/800
ESM 355
esm power diodes
esm diodes
|
transistor ESM
Abstract: marking B3 KDS121E ESM diode
Text: SEMICONDUCTOR KDS121E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current IFM 300 * mA Average Forward Current
|
Original
|
PDF
|
KDS121E
100mA
transistor ESM
marking B3
KDS121E
ESM diode
|
Marking H2
Abstract: marking .H2 transistor ESM 30 BAV70T
Text: SEMICONDUCTOR BAV70T TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : ESM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G H : CT=0.9pF (Typ.). 3 1 SYMBOL RATING UNIT VRM 85 V Reverse Voltage VR 80 V Continuous Forward Current
|
Original
|
PDF
|
BAV70T
Marking H2
marking .H2
transistor ESM 30
BAV70T
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDS221E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E Small Package : ESM. B Low Forward Voltage : VF=1.0V Max. . D G C H A 2 DIM A B 3 1 MILLIMETERS _ 0.10 1.60 + _ 0.10 0.85 + _ 0.10 0.70 +
|
Original
|
PDF
|
KDS221E
|
esm diodes
Abstract: ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390
Text: clamping zener diodes diodes zener ecreteuses THOMSON-CSF V BR * 'RM @ V rivi Unidirectional types 1mA) 4 KW ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM 111-15 111-18 111-22 111-27 111-33 111-39 111-47 111-56 111-68 111-82
|
OCR Scan
|
PDF
|
300/ts
CB-150
CB-34)
esm diodes
ESM 470
esm 30 450 v
ESM 650
esm 112-39
esm 200
cb33 p
112220
112180
esm 112 390
|
|
|
diode ESM 15
Abstract: diode ESM 245-1000 diode ESM 244-600 ESM 244-600 diode 606 esm diodes ESM diode Diodes de redressement DIODE REDRESSEMENT esm 200
Text: fast recovery rectifier diodes < 100 A diodes de redressement rapide < 100 A Types •o Vr r m ■ fsm 10 ms A (V) (A) 60 A / T ç g j g = 90 °C ESM ESM ESM ESM ESM 243- 50, 243-100, 243-200, 243-300, 243-400, (R) (R) (R) (R) (R) j = 165°C 1■ 60 A / Tçase = 90 °C
|
OCR Scan
|
PDF
|
CB-34)
CB-256)
CB-319)
diode ESM 15
diode ESM 245-1000
diode ESM 244-600
ESM 244-600
diode 606
esm diodes
ESM diode
Diodes de redressement
DIODE REDRESSEMENT
esm 200
|
byx 200
Abstract: esm diodes byx 65 400 243300 243_400 243400 BYX/400 65400 ESM 244-600 244-600
Text: rZ7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES FAST RECOVERY RECTIFIER DIODES < 100 A Continued Type •o VRRM •fsm 1 vF iF 10 ms max ESM 765PI-600 ESM 765PI-800 BYX61- 50, BYX 61-100, BYX 61-200, BYX 61-300, BYX 61-400, (R) (R) (R) (R)
|
OCR Scan
|
PDF
|
765PI-600
765PI-800
BYX61-
1N3903,
1N3910,
byx 200
esm diodes
byx 65 400
243300
243_400
243400
BYX/400
65400
ESM 244-600
244-600
|
esm diodes
Abstract: esm 200 esm 30 450 v esm 112 390 ESM 650 impulsion P005 esm 112-270 SUPPRESSOR cb T0126
Text: Type V B R T (V) VRm ax (V) / IR T (m A) min V (BR)SM (V) / x D R T 76 'rsm1 (A) Page 369 T (v j | 2 5 ° C T(vj) 25 OC ESM 112-100 80 90 100 165 23 * £ S M 112-120 95 105 100 200 19 369 ESM 112-150 115 130 100 250 15 369 ESM 112-180 145 160 60 300 13 369
|
OCR Scan
|
PDF
|
T0126
esm diodes
esm 200
esm 30 450 v
esm 112 390
ESM 650
impulsion
P005
esm 112-270
SUPPRESSOR cb
T0126
|
DIODE REDRESSEMENT
Abstract: esm 310 BP ESM 310 ESM 346 diode ESM 15 diode 243 diode 243400 703AL ESM fe JEDEC to 243 ST
Text: S G SIC S -^THOMSON D 1I T lS I ia ? D D O a iO I ESM 243-50, R ESM 243-400, (R) V THOMSON-CSF DIVISION SEM ICONMJC1ÏURS OISCMT5 SUPERSWITCH FAST RECOVERY RECTIFIER DIODES DIODES DE REDRESSEMENT RAPIDES 59C 02309 D 7~‘ 0 J ' i / - FAST RECOVERY VrrM 6 0 -* 400 V
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: s G S —THOMSON S IC I D • 7 C12,:1237 0 0 0 2 3 2 3 ' 7 59C 02 323 O D T-03 -A.I ESM 245-50, R ESM 245-1000, (R) T H O M S O N -C S F DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
|
OCR Scan
|
PDF
|
CB-262
CB-262)
CB-19)
CB-428)
CB-244
|
diode ESM 245-1000
Abstract: ESM 310 esm diodes diode esm245 ESM245-1000 diode ESM 44 QQQ233Q ESM246 ESM245-100 AIO22
Text: S — T H O M S O N S I C I D • 7 ' 7 59C 0 2 3 2 3 O THOMSON-CSF C 1 2 ,:1 2 3 7 D T-03 2 3 2 3 fi -A.I ESM 245-50, R ESM 245-1000, (R) DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH FAST RECOVERY RECTIFIER OIOOES DIODES DE REDRESSEMENT RAPIDES HIGH VOLTAGE
|
OCR Scan
|
PDF
|
1/4-28UNF
310cm
CB-34)
diode ESM 245-1000
ESM 310
esm diodes
diode esm245
ESM245-1000
diode ESM 44
QQQ233Q
ESM246
ESM245-100
AIO22
|
DIODE REDRESSEMENT
Abstract: esm 310 BP 703AL diode ESM 15 ESM 355 D10SG JEDEC to 243 ST TNE 0235 GQG531S CB-262
Text: 1 S IC S G S -^THOMSON V D I T lS Iia ? D D O a iO I ESM 243-50, R ESM 243-400, (R) T H O M S O N -C S F DIVISION SEMICONMJC1ÏURS OISCMT5 SUPERSWITCH FA ST R EC O V ERY R E C T IF IE R DIODES DIODES DE R E D R ESSEM EN T RAPID ES 59C 02309 D 7~‘ 0 J ' i /
|
OCR Scan
|
PDF
|
CB-210)
0D053b0
CB-19)
CB-428)
CB-244
DIODE REDRESSEMENT
esm 310 BP
703AL
diode ESM 15
ESM 355
D10SG
JEDEC to 243 ST
TNE 0235
GQG531S
CB-262
|
ic Lb 598 d
Abstract: ESM6045DV
Text: FZ7 SGS-THOMSON *> 7 # ESM 6045DV NPN DARLINGTON POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE . VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS . ULTRAFAST FREEWHEELING DIODE . ISOLATED CASE 2500V RMS . EASY TO MOUNT . LOW INTERNAL PARASITIC INDUCTANCE
|
OCR Scan
|
PDF
|
6045DV
ESM6045DV
ic Lb 598 d
ESM6045DV
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA BAV70T SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance ESM. Vp=0.9V Typ. . t„=1.6ns(Typ.).
|
OCR Scan
|
PDF
|
BAV70T
150mA
TTa--25
-OUT-50^
|
diode ESM 15
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA BAW56T SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package • Low Forward Voltage • Fast Reverse Recovery Time • Small Total Capacitance ESM. Vp=0.92V Typ. . t„=1.6ns(Typ.). Ci=2.2pF (Typ.).
|
OCR Scan
|
PDF
|
BAW56T
150mA
diode ESM 15
|
