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    EUDYNA GAAS FET AMPLIFIER Search Results

    EUDYNA GAAS FET AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    P206 Coilcraft Inc Designer's Kit, Mag Amp toroids, not RoHS Visit Coilcraft Inc Buy
    UPC251G2-A Renesas Electronics Corporation Operational Amplifier Visit Renesas Electronics Corporation
    UPC821C-A Renesas Electronics Corporation Operational Amplifiers Visit Renesas Electronics Corporation
    HA17904ATEL-E Renesas Electronics Corporation Operational Amplifiers Visit Renesas Electronics Corporation

    EUDYNA GAAS FET AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FLL410IK-4C

    Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
    Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is


    Original     		FLL410IK-4C FLL410IK-4C ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers PDF

    L-Band

    Abstract: FLL410IK-3C
    Text: FLL410IK-3C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=13.0dB(Typ.) ・High PAE: ηadd=52%(Typ.) ・Broad Band: 2.5~2.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is


    Original     		FLL410IK-3C FLL410IK-3C L-Band PDF

    L-Band

    Abstract: No abstract text available
    Text: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design


    Original     		FLL810IQ-4C FLL810IQ-4C L-Band PDF

    Eudyna Devices

    Abstract: eudyna fet FLL810IQ-3C
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original     		FLL810IQ-3C FLL810IQ-3C Symbo4888 Eudyna Devices eudyna fet PDF

    L-Band

    Abstract: 842 FET
    Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		FLL600IQ-2 FLL600IQ-2 L-Band 842 FET PDF

    Eudyna Devices power amplifiers

    Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 Eudyna high power
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 t4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier Eudyna high power PDF

    Untitled

    Abstract: No abstract text available
    Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium


    Original     		FSX027WF FSX027WF 12GHz. PDF

    FLL1500IU-2C

    Abstract: imt 901 FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C imt 901 FLL1500 PDF

    L-Band

    Abstract: FLL410IK-4C
    Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is


    Original     		FLL410IK-4C FLL410IK-4C L-Band PDF

    FLL21E004ME

    Abstract: No abstract text available
    Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		FLL21E004ME 36dBm 17GHz 2200MHz FLL21E004ME PDF

    FLL21E010MK

    Abstract: R104-5
    Text: FLL21E010MK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=40dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		FLL21E010MK 40dBm 17GHz 2200MHz FLL21E010MK R104-5 PDF

    601 121

    Abstract: FLL800IQ-2C
    Text: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that


    Original     		FLL800IQ-2C FLL800IQ-2C 601 121 PDF

    FLL1500IU-2C

    Abstract: eudyna GaAs FET Amplifier
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1500IU-2C FLL1500IU-2C eudyna GaAs FET Amplifier PDF

    FLL810IQ-3C

    Abstract: No abstract text available
    Text: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.


    Original     		FLL810IQ-3C FLL810IQ-3C Symbo4888 PDF

    eudyna GaAs FET Amplifier

    Abstract: FLL2400IU-2C Eudyna Devices
    Text: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that


    Original     		FLL2400IU-2C FLL2400IU-2C eudyna GaAs FET Amplifier Eudyna Devices PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,


    Original     		FLL21E135IX 2170MHz FLL21E135IX PDF

    ED-4701

    Abstract: FLL21E135IX
    Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,


    Original     		FLL21E135IX 2170MHz FLL21E135IX ED-4701 PDF

    FLL1200IU-2

    Abstract: No abstract text available
    Text: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 1800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that


    Original     		FLL1200IU-2 FLL1200IU-2 t4888 PDF

    Eudyna Devices power amplifiers

    Abstract: FLL600IQ-2 eudyna GaAs FET Amplifier
    Text: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which


    Original     		FLL600IQ-2 FLL600IQ-2 Commu4888 Eudyna Devices power amplifiers eudyna GaAs FET Amplifier PDF

    magS12

    Abstract: fll21 4-10-107 FLL21E004ME L-Band
    Text: FLL21E004ME High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm typ. at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION


    Original     		FLL21E004ME 36dBm 17GHz 2200MHz FLL21E004ME magS12 fll21 4-10-107 L-Band PDF

    FLL21E090IK

    Abstract: No abstract text available
    Text: FLL21E090IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=43dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E090IK is a high power GaAs FET that offers high efficiency,


    Original     		FLL21E090IK 43dBm 2200MHz FLL21E090IK PDF

    7824 TO-3 package

    Abstract: high power FET transistor s-parameters FLL21E040IK MA 7824. to-3 Eudyna Devices power amplifiers
    Text: FLL21E040IK High Voltage - High Power GaAs FET FEATURES ・High Voltage Operation : VDS=28V ・High Gain: 15dB typ. at Pout=40dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency,


    Original     		FLL21E040IK 40dBm 2200MHz FLL21E040IK 7824 TO-3 package high power FET transistor s-parameters MA 7824. to-3 Eudyna Devices power amplifiers PDF

    FSX027WF

    Abstract: fsx027w
    Text: FSX027WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz High Power Gain: G1dB=10dB(Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX027WF is a general purpose GaAs FET designed for medium


    Original     		FSX027WF FSX027WF 12GHz. Powe4888 fsx027w PDF

    FLL21E060IY

    Abstract: FLL21E06 diode gp 421 ED-4701 ED 17642
    Text: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,


    Original     		FLL21E060IY 2170MHz FLL21E060IY FLL21E06 diode gp 421 ED-4701 ED 17642 PDF