Untitled
Abstract: No abstract text available
Text: LGA/BGA SMT Adapter 5 Energy Way, P.O. Box 1019, West Warwick, RI 02893 USA Tel. 800-424-9850/401-823-5200 • Fax 401-823-8723 • Email [email protected] • Internet http://www.advintcorp.com LGA/BGA SMT Adapter Typical Applications LGA Adapter De-balled BGA Adapter
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C36000)
ASTM-B-16
63Sn/37Pb
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AMS104W
Abstract: AMS104Y NaPICa
Text: Light Sensor AMS1 Light Sensor Cadmium-free sensor with spectral response FEATURES TYPICAL APPLICATIONS 1. Built-in optical filter for spectral response similar to that of the human eye. Peak sensitivity wavelength is 580 nm 1. Brightness detection for LCD backlight
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079inch
AMS104W
AMS104Y
NaPICa
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HMC266
Abstract: No abstract text available
Text: y2 k n ew ! HMC266 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 20 - 40 GHz V01.0300 FEBRUARY 2001 Features General Description INPUT IP3 : UP to +17 dBm The HMC266 chip is a broadband sub-harmonically pumped x2 balanced MMIC passive mixer which can be used as an upconverter
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HMC266
HMC266
38GHz
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Untitled
Abstract: No abstract text available
Text: HIGH POWER FYLP FYLP-1W1W-UWS UWS Features: Radiation Pattern （ Package Dimensions Instant light less than 100ns Applications 15(.59) + - + + - 4(.157) 60° 2(.0787) 8(.315)±0.1(.004) 6(.236)±0.1(.004) 20(.787) 1.3(.05)±0.1(.004) Reading lights (car,bus,aircraft)
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100ns)
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FYLP-1W-UWB
Abstract: FYLP-1W eutectic 157
Text: HIGH POWER FYLP FYLP-1W1W-UWB UWB Features: Radiation Pattern Long operating life Highest flux Available in White Lambertian radiation pattern More energy efficient than incandescent and most halogen lamps Low voltage DC operated Cool beam,safe to the touch
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100ns)
FYLP-1W-UWB
FYLP-1W
eutectic 157
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Untitled
Abstract: No abstract text available
Text: 17.0-27.0 GHz GaAs MMIC Receiver R1000-BD May 2007 - Rev 02-May-07 Features Fundamental Integrated Receiver 10.0 dB Conversion Gain 3.5 dB Noise Figure 15.0 dB Image Rejection 60.0 dB LO/RF Isolation 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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02-May-07
R1000-BD
MIL-STD-883
XR1000-BD-000V
XR1000-BD-000W
XR1000-BD-EV1
XR1000
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R300 diodes
Abstract: b1002 100 XP1001 B1002 XB1002 XU1001
Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias
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B1002
01-Apr-05
MIL-STD-883
R300 diodes
b1002 100
XP1001
B1002
XB1002
XU1001
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transistor s11 s12 s21 s22
Abstract: No abstract text available
Text: 36.0-43.0 GHz GaAs MMIC Buffer Amplifier B1002-BD May 2007 - Rev 02-May-07 Features High Dynamic Range/Postivie Gain Slope Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 24.0 dB Small Signal Gain 4.0 dB Noise Figure at Low Noise Bias
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02-May-07
B1002-BD
MIL-STD-883
XB1002-BD-000V
XB1002-BD-000W
XB1002-BD-EV1
XB1002
transistor s11 s12 s21 s22
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B1000
Abstract: Mimix xb1000
Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing
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10-May-03
B1000
MIL-STD-883
Mimix xb1000
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EFC240B
Abstract: No abstract text available
Text: EFC240B Low Distortion GaAs Power FET FEATURES • • • • • • • 960 50 +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE
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EFC240B
12GHz
18GHz
EFC240B
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TGA8622-SCC
Abstract: No abstract text available
Text: Product Data Sheet June 4, 2001 2 - 20 GHz Gain Block Amplifier TGA8622-SCC Key Features and Performance • • • • • • 2 to 20 GHz Frequency Range 7.5 dB Gain with Greater than 30dB Gain-Control Capability 20 dBm Output Power at 1 dB Gain Compression
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TGA8622-SCC
TGA8622-SCC
200um
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q8632
Abstract: TGS8632-XCC
Text: TGS8632-XCC SPST FET Switch ● ● ● ● ● ● 8632 DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/Output SWR High Isolation; 43-dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in.
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TGS8632-XCC
18-GHz
18-GHz
43-dB
TGS8632-XCC
15-dB.
q8632
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MMA60
Abstract: 8 mu 0833 MCE Metelics
Text: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided
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MMA601
MMA601
44dBm
MMA60
8 mu 0833
MCE Metelics
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olin 7025
Abstract: 7025 alloy lead frame CDA 194 X10-4 eftec-64t Eftec 64t resistivity table sn 8400 PHYSICAL CONSTANTS OF IC PACKAGE MATERIALS
Text: Physical Constants of IC Package Materials 5 Table 5-1 through Table 5-3 list typical values for selected properties of materials used in IC packages. Table 5-1. Case Material Characteristics Properties Density Modulus of Elasticity Tensile Strength Units
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Untitled
Abstract: No abstract text available
Text: ADVANCED aKJA« INTERCONNECTIONS. LGA/BGA SMT Adapter 5 Energy Way, P.O. Box 1019, West Warwick, Rl 02893 USA Tel. 800-424-9850/401-823-5200 » Fax 401-823-8723 •Email [email protected] • Internet http://www.advintcorp.com LGA/BGA SMT Adapter Typical Applications
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CustomC36000)
ASTM-B-16
63Sn/37Pb
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PDF
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FRO 021
Abstract: NLT4532 NLT4532T-S14R3 NLT4532T-S6R2 NLT4532T-S3R6 NLT4532T rc 3150
Text: Leadless LC Traps NLT Series TDK Leadless LC Traps Wire wound LC Chip Traps let you achieve high-density parts mounting onto printed circuit boards. The LC traps can be precisely mounted since they are manufactured with high precision, and their shape is specifically designed to meet the handling requirements of
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NLT3225
NLT4532
RC-1009)
NLT4532
FRO 021
NLT4532T-S14R3
NLT4532T-S6R2
NLT4532T-S3R6
NLT4532T
rc 3150
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SW-200
Abstract: SW200
Text: 5 b 45177 0003102 3 14E D M/A-COM INC/ ANZAC DIV •7 = 5 1 - 1 1 Low Insertion Loss, 0.5 dB Typical Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications* F ro m - 5 5 ° C to + 8 5 ° C Frequency Range
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5b45177
SW-200
SW200
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Untitled
Abstract: No abstract text available
Text: g 'SSLSRÈTSK CMM-10 2.0 to 20.0 GHz GaAs MMIC Power Amplifier Prelim inary P roduct In fo rm atio n Decem ber 1991 Features □ Small Size: 43 x 92 mils □ High Gain □ Directly Cascadable □ Medium Power: +23 dBm □ Ion-Implanted Active Layers □ Silicon Nitride Passivation
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CMM-10
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AS 15 f
Abstract: No abstract text available
Text: Whol H E W L E T T PACKARD Silicon Bipolar Monolithic Am plifiers Technical Data HPMA-0400 HPMA-0435 Features CHIP OUTLINE HPMA-0400 HPMA-0400 • 3 dB Bandwidth: DC to 4.2 GHz ■ 8.3 dB Gain at 1 GHz ■ Unconditionally Stable k>l ■ Cascadable 50 O Gain Block
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HPMA-0400
HPMA-0435
HPMA-0400
AS 15 f
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NLL4532
Abstract: 1R2101 NLL3225 NLL4532T 7es marking 2r2 101 tdk
Text: Leadless EMI Filters NLL Series TDK leadless EMI Filters are ideal for the miniaturization and the weight reduction of electronic devices. Their small size allows them to be particularly effective in reducing EMI in very localized areas of the circuit. FEATURES
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10000pF
50Vdc]
100000pF
25Vdc]
220/iH
10000pF]
RC-1009)
NLL3225
NLL4532
1R2101
NLL4532T
7es marking
2r2 101 tdk
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9701455-S-J1
Abstract: APH184C
Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps
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APH184C
APH184C
SA051
9701455-S-J1
9701455-S-J1
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Untitled
Abstract: No abstract text available
Text: SPDT FET Switch TGS8630-XCC DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.
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TGS8630-XCC
12-GHz
46-dB
18-GHz
S8630-XCC
19-dB.
22-dBm.
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X01016
Abstract: No abstract text available
Text: SPDT FET Switch TGS8630-XCC DC to 12-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collector TTL Typical Insertion Loss: 2.3-dB at 12-GHz High Isolation: 46-dB through 12-GHz Useable Bandwidth through 18-GHz 3,454 x 2,007 x 0,102 mm 0.136 x 0.079 x 0.004 in.
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TGS8630-XCC
12-GHz
46-dB
18-GHz
TGS8630-XCC
19-dB.
22-dBm
X01016
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PDF
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Untitled
Abstract: No abstract text available
Text: DC to 18-GHz Frequency Range On-Chip Driver Compatible with CMOS or Open-Collect or TTL Typical Insertion Loss 2.3-dB at 18-GHz 1.5:1 Input/ Output SWR High Isolation; 4 3 -dB Across Band 2,489 x 1,803 x 0,102 mm 0.098 x 0.071 x 0.004 in. PHOTO ENLARGEMENT
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18-GHz
TGS8632-XCC
43-dB
15-dB.
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