Teradyne
Abstract: teradyne tester test system ziatech
Text: ISP Cost-of-Ownership Click on one of the following choices: • • • • ISP Cost-of-Ownership Excel v.5 Worksheet Excel v.4 Worksheet Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. TM ISP Cost-of-Ownership Analysis ISP Cost-of-Ownership
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irf44z
Abstract: 3525 PWM 5n03 IRFZ44 parallel 5bp transistor making AN1520 MTP75N03HDL two transistor forward 2p02 IRFZ44 equivalent
Text: MOTOROLA Order this document by AN1520/D SEMICONDUCTOR APPLICATION NOTE AN1520 HDTMOS Power MOSFETs Excel in Synchronous Rectifier Applications Prepared by: Scott Deuty, Applications Engineer Motorola Inc. A new technology, HDTMOS, was recently introduced
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AN1520/D
AN1520
AN1520/D*
irf44z
3525 PWM
5n03
IRFZ44 parallel
5bp transistor making
AN1520
MTP75N03HDL
two transistor forward
2p02
IRFZ44 equivalent
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ES25P40
Abstract: No abstract text available
Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P40 4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations
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ES25P40
75Mhz
66MHz
75MHz.
ES25P40
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ES25P16
Abstract: SA28 SA29 SA30 208mil
Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P16 16Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations
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ES25P16
16Mbit
75Mhz
66MHz
75MHz
ES25P16
SA28
SA29
SA30
208mil
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E0000
Abstract: ES25P80 SA10 SA11 SA12 SA13 SA14 SA15
Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES25P80 8Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface ARCHITECTURAL ADVANTAGES PERFORMANCE CHARACTERISTICS • Single power supply operation - 2.7V -3.6V for read and program operations
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ES25P80
75Mhz
66MHz
75MHz.
E0000
ES25P80
SA10
SA11
SA12
SA13
SA14
SA15
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ES29LV160DB-90TG
Abstract: si 462 laser diode ES29LV160D 12wg ES29LV160DT
Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
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ES29LV160D
16Mbit
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV160DT
ES29LV160DB
48-pin
48-ball
ES29LV160DB-90TG
si 462 laser diode
ES29LV160D
12wg
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ES29LV320
Abstract: ES29LV320D
Text: EE SS II - Preliminary - Excel Semiconductor inc. ES29LV320D 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft - GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC
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ES29LV320D
32Mbit
125oC
64Kbyte
256byte
ES29LV320DT
ES29LV320DB
ES29LV320
ES29LV320D
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ES29DL320
Abstract: 3FE00
Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz
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ES29DL320
32Mbit
125oC
ES29DL320
3FE00
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ES29LV400D
Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
Text: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV400D
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400DT
ES29LV400DB
48-pin
ES29LV400D
ES29LV400DT-70RTG
ES29LV400DB-70RTG
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ES29LV160D
Abstract: es29lv160dt-70rtci ES29LV160DT-70RTG ES29LV160DT-70RTC
Text: EE SS II Excel Semiconductor inc. ES29LV160D 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV160D
16Mbit
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV160DT
ES29LV160DB
48-pin
48-ball
ES29LV160D
es29lv160dt-70rtci
ES29LV160DT-70RTG
ES29LV160DT-70RTC
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ES29LV400EB-70TGI
Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV400E
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400ET
ES29LV400EB
48-pin
ES29LV400EB-70TGI
ES29LV400EB-70TG
ES29LV400E
BB 555
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MT48LC2M32B2-5
Abstract: timing analysis example MSC8122 MT48LC2M32B2 AN3014 MSC8122MP8000 MSC8122TMP4800V MSC8122TMP6400 MSC8122TVT4800V MSC8122TVT6400
Text: Freescale Semiconductor Application Note AN3014 Rev. 1, 8/2007 AC Timing Analysis Between SDRAM and the StarCore -Based MSC8122 DSP By Boaz Kfir This application note and the associated Excel spreadsheet assist in the analysis of AC timing for the interface between an
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AN3014
MSC8122
MSC8122
AN3014SW)
MT48LC2M32B2-5
timing analysis example
MT48LC2M32B2
AN3014
MSC8122MP8000
MSC8122TMP4800V
MSC8122TMP6400
MSC8122TVT4800V
MSC8122TVT6400
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ES29LV160EB-70TGI
Abstract: es29lv160eb-70tg ES29LV160EB-70WGI ES29LV160E ES29LV160EB-70TCI EXCEL SEMICONDUCTOR INC
Text: EE SS II Excel Semiconductor inc. ES29LV160E 16Mbit 2M x 8/1M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV160E
16Mbit
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV160ET
ES29LV160EB
48-pin
48-ball
ES29LV160EB-70TGI
es29lv160eb-70tg
ES29LV160EB-70WGI
ES29LV160E
ES29LV160EB-70TCI
EXCEL SEMICONDUCTOR INC
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ES29LV160F
Abstract: SA10
Text: ES29LV160F 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory ES29LV160F Excel Semiconductor Inc. ES29LV160F 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Main Characteristics Architectural Advantages
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ES29LV160F
16-Bit)
ES29LV160F
SA10
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ES29LV800DB-90TG
Abstract: ES29LV800 ES29LV800DB-12TG ES29LV800D ES29LV800DB-70WG ES29lv800dt-70 000000X ES29LV800DB-70WGI ES29LV800DB-70TG ES29LV800DB-70TC
Text: EE SS II Excel Semiconductor inc. ES29LV800D 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV800D
8/512K
125oC
16Kbyte
32Kbyte
64Kbyte
15sectors
ES29LV800DT
ES29LV800DB
48-pin
ES29LV800DB-90TG
ES29LV800
ES29LV800DB-12TG
ES29LV800D
ES29LV800DB-70WG
ES29lv800dt-70
000000X
ES29LV800DB-70WGI
ES29LV800DB-70TG
ES29LV800DB-70TC
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ES29LV320DB-80RTG
Abstract: ES29LV320 ES29LV320D
Text: EE SS II Excel Semiconductor inc. ES29LV320D 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV320D
32Mbit
125oC
64Kbyte
256byte
ES29LV320DT
ES29LV320DB
ES29LV320DB-80RTG
ES29LV320
ES29LV320D
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ES29LV800EB-70TG
Abstract: es29lv800et-70tg ES29LV800ET-70WC ES29LV800 ES29LV800E ES29LV800ET-70TGI ES29LV800EB-70TGI ES29LV800ET70TG ES29LV800EB
Text: EE SS II Excel Semiconductor inc. ES29LV800E 8Mbit 1M x 8/512K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV800E
8/512K
125oC
16Kbyte
32Kbyte
64Kbyte
15sectors
ES29LV800ET
ES29LV800EB
48-pin
ES29LV800EB-70TG
es29lv800et-70tg
ES29LV800ET-70WC
ES29LV800
ES29LV800E
ES29LV800ET-70TGI
ES29LV800EB-70TGI
ES29LV800ET70TG
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k98m
Abstract: MSC8126 AN2905 SC140 DSI spec
Text: Freescale Semiconductor Application Note AN2905 Rev. 0, 11/2004 Clock Mode Selection for MSC8126 Mask Set K98M By Donald Simon and Wes Ray This application note describes the MSC8126 clock modes for mask set K98M. It also describes a Microsoft Excel application that assists users in determining the internal/external
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AN2905
MSC8126
MSC8126
0K98M
1K98M
k98m
AN2905
SC140
DSI spec
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AN2904
Abstract: MSC8122RM K98M MSC8122 SC140 MSC8122UG
Text: Freescale Semiconductor Application Note AN2904 Rev. 0, 11/2004 Clock Mode Selection for MSC8122 Mask Set K98M By Donald Simon and Wes Ray This application note describes the MSC8122 clock modes for mask set K98M. It also describes a Microsoft Excel application that assists users in determining the internal/external
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AN2904
MSC8122
MSC8122
0K98M
1K98M
AN2904
MSC8122RM
K98M
SC140
MSC8122UG
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dhtml introduction
Abstract: AN2263
Text: Freescale Semiconductor Application Note AN2263/D 12/2002 Freescale Semiconductor, Inc. PC Master Software: Creation of Advanced Control Pages By Milan Brejl S3L Applications Engineering Freescale Czech Systems Laboratories Roznov pod Radhostem, Czech Republic
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AN2263/D
dhtml introduction
AN2263
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LOGO TD text display
Abstract: dhtml introduction interface control in visualbasic FRAC16
Text: Freescale Semiconductor, Inc. Application Note AN2263/D 12/2002 Freescale Semiconductor, Inc. PC Master Software: Creation of Advanced Control Pages By Milan Brejl S3L Applications Engineering Motorola Czech Systems Laboratories Roznov pod Radhostem, Czech Republic
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AN2263/D
LOGO TD text display
dhtml introduction
interface control in visualbasic
FRAC16
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SBFA001
Abstract: chebyshev E192 TPS54610 TPS54616 TPS54672 TPS6734 TPS7101 TPS7201 TPS7301 E192
Text: General Interest Texas Instruments Incorporated Analog design tools By John Bishop Applications Specialist, High-Performance Linear Products Introduction Windows application tools Most analog designers are using design tools developed for use on the computer. Many such tools are available
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SLYT122
SBFA001
chebyshev E192
TPS54610
TPS54616
TPS54672
TPS6734
TPS7101
TPS7201
TPS7301
E192
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Product Selector Guide
Abstract: No abstract text available
Text: About the ISP Encyclopedia Contents Lattice Semiconductor’s ISP Encyclopedia on CDROM contains the industry’s largest compilation of technical information on ISP programmable logic devices. The ISP Encyclopedia includes the content of the 1996 Data Book, Handbook, and ISP Manual. Together
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12 volt dc to 220 volt ac inverter 1000 watts
Abstract: 220 ac INVERTER without transformer 12 VOLTS INVERTER CIRCUIT USING MOSFET osram transistor Electronic ballast AR181 FULL WAVE RECTIFIER CIRCUITS 220 AC motorola AR181 Motorola Bipolar Transistor BOOK osram ballast circuit 12 volt ac to dc bridge rectifier circuit
Text: BIPOLAR TRANSISTORS EXCEL IN OFF-LINE RESONANT CONVERTERS Prepared by Jim Spangler, Applications Engineer Motorola Semiconductor Products Inc Phoenix, Az. Reprinted with permission of POWERTECHNICS, March, 1986 issue. 1986 Darnell Research Inc. All rights reserved.
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AR181/D
12 volt dc to 220 volt ac inverter 1000 watts
220 ac INVERTER without transformer
12 VOLTS INVERTER CIRCUIT USING MOSFET
osram transistor Electronic ballast
AR181
FULL WAVE RECTIFIER CIRCUITS 220 AC
motorola AR181
Motorola Bipolar Transistor BOOK
osram ballast circuit
12 volt ac to dc bridge rectifier circuit
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