2SC959
Abstract: 2sc960 C959 2SA606 2SA607 transistor ft 960 2116 2SC999
Text: 2SA606, 607/2SC 959, 960 2SA606, 607/2SC959, 960 PNP/NPN x e 9 * > 7 y a v h 9 V '✓7.9 / P N P / N P N SILICON EP IT A X IA L TRANSISTOR f â H S iî l Î B f f l / A u d io Frequency Amplifier « « ./F E A T U R E S ♦ »»8 /PACKAGE DIMENSIONS lUmtmml
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2SA606,
2SA607
2SC959,
2SC960
607/2SC959,
2SA606
2SC960
2SCS09
2SC959
C959
transistor ft 960
2116
2SC999
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BF959
Abstract: f 959 transistor Q62702-F640
Text: NPN Silicon RF Transistor ● For SAW filter driver applications in TV tuners ● For linear broadband VHF amplifier stages ● For oscillator applications BF 959 Type Marking Ordering Code BF 959 – Q62702-F640 Pin Configuration 1 2 3 C E Package1 TO-92
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Q62702-F640
BF959
f 959 transistor
Q62702-F640
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Untitled
Abstract: No abstract text available
Text: S IE M E N S NPN Silicon RF Transistor BF 959 • For SAW filter driver applications in TV tuners • For linear broadband VHF amplifier stages • For oscillator applications Type Marking Ordering Code BF 959 - Q62702-F640 Pin Co nfigural ion 1 2 3 C E Package1
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Q62702-F640
E35bD5
G12173M
fl235bD5
D121735
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SC1959
Abstract: 2SC1959
Text: TOSHIBA TRANSISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL 2 S C 1 959 DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (2 SC 1959) Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS . 5.1 MAX.
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2SC1959
400mA
2SA562TM.
100man
SC1959)
SC1959
2SC1959
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9426
Abstract: 9527 sumitomo epoxy 6300h
Text: 05/27/2004 RELIABILITY REPORT FOR DS2187, Rev C7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS2187,
9426
9527
sumitomo epoxy 6300h
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PDF
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12ds7
Abstract: 12ds7 tube Scans-0017276 general electric
Text: 12DS7 12DS7 ET-T1551 Page 1 DUPLEX-DIODE TETRODE TUBES 9-59 FOR DETECTOR AND AF DRIVER APPLICATIONS IN AUTOMOBILE RECEIVERS DESCRIPTION A N D RATINGS T h e 12DS7 is a m iniature duplex-diode, space-charge-grid tetrode intended for use as a com bined detector, A V C rectifier, an d transistor driver. T h e tube
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12DS7
ET-T1551
12DS7
12-volt
K-556
I-TD84-
K-556II-TD84-2
12ds7 tube
Scans-0017276
general electric
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PDF
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NEC Ga FET marking L
Abstract: U/25/20/TN26/15/850/NE32984D
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE32984D
NE32984D
NE32984D-SL
NE32984Dr
NEC Ga FET marking L
U/25/20/TN26/15/850/NE32984D
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PDF
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9721
Abstract: ABLEBONd 84-1 JEDEC hast
Text: 03/24/2003 RELIABILITY REPORT FOR DS1005, Rev A2 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1005,
reliabilit0037
9721
ABLEBONd 84-1
JEDEC hast
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sot marking code ZS
Abstract: transistor bf 290
Text: SIEMENS BF 770A NPN S ilicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators it m 1= B h Q62702-F1124 O LSs CO BF 770A ro ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin C onfiguration
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OT-23
Q62702-F1124
21el2
IS2l/S12l
sot marking code ZS
transistor bf 290
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PDF
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Transistor NEC K 3654
Abstract: NEC Ga FET marking L NEC 2505 NEC k 3654 NEC Ga FET marking A KA transistor 26 to 40 GHZ NEC 1093 nec gaas fet marking low noise, hetero junction fet NEC Ga FET marking V
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE32984D
NE32984D
NE32984D-T1A
NE32984D-SL
NE32984D-T1
Transistor NEC K 3654
NEC Ga FET marking L
NEC 2505
NEC k 3654
NEC Ga FET marking A
KA transistor 26 to 40 GHZ
NEC 1093
nec gaas fet marking
low noise, hetero junction fet
NEC Ga FET marking V
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transistor marking p04
Abstract: P04 transistor transistor p04 MARKING CODE p04 LC marking code transistor
Text: Philips Semiconductors Product specification NPN general purpose transistor PMBS3904 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification, e.g.
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PMBS3904
PMBS3906.
transistor marking p04
P04 transistor
transistor p04
MARKING CODE p04
LC marking code transistor
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mark a7 sot23
Abstract: J-STD-20A atec 6710S CDA194 mp8000
Text: 08/23/2004 RELIABILITY REPORT FOR DS1816, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1816,
JESD78,
mark a7 sot23
J-STD-20A
atec
6710S
CDA194
mp8000
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PDF
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CDA194
Abstract: mark a7 sot23
Text: 08/23/2004 RELIABILITY REPORT FOR DS1810, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1810,
JESD78,
CDA194
mark a7 sot23
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LMISR4
Abstract: No abstract text available
Text: 08/23/2004 RELIABILITY REPORT FOR DS1811, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1811,
JESD78,
LMISR4
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PTF080901A
Abstract: 080901E smd marking PTF ptf080901e resistor 1 ohms philips resistor LDMOS 90W
Text: Preliminary PTF 080901 LDMOS RF Power Field Effect Transistor 90 W, 860–960 MHz Description Key Features The PTF 080901 is a 90–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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CDA194
Abstract: mark a7 sot23 mold compound
Text: 08/23/2004 RELIABILITY REPORT FOR DS1817, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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Original
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DS1817,
JESD78,
CDA194
mark a7 sot23
mold compound
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PDF
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Untitled
Abstract: No abstract text available
Text: 08/23/2004 RELIABILITY REPORT FOR DS1818, Rev A6 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1818,
JESD78,
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PDF
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Untitled
Abstract: No abstract text available
Text: DTC363EK/DTC363ES/DTC363EF DTC363EL/DTC363EA/DTC363EV I ' 7 > y X $ /Transistors D TC 363EK /D TC 363ES/D TC 363EF D TC 363EL/D TC 363EA /D TC 363EV 5 l- T < > ? « T - > 'W h 7 > - /X J g j S r t a h 7 > -> ' X 2 ^-/Transistor Switch Digital Transistors (Includes Resistors)
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DTC363EK/DTC363ES/DTC363EF
DTC363EL/DTC363EA/DTC363EV
363EK
363ES/D
363EF
363EL/D
363EA
363EV
50mA/
600mA)
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PDF
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DD 127 D TRANSISTOR
Abstract: A90W ptf080901e
Text: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF080901
PTF080901
DD 127 D TRANSISTOR
A90W
ptf080901e
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LM7805 smd
Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
Text: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.
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PTF080451
PTF080451
LM7805 smd
LM7805 smd 8 pin
marking us capacitor pf l1
smd marking f2
TRANSISTOR circuit of lm7805
transistor smd marking ND
BCP56
LM7805
PTF080451E
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PDF
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mark a7 sot23
Abstract: No abstract text available
Text: 08/23/2004 RELIABILITY REPORT FOR DS1815, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1815,
JESD78,
mark a7 sot23
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PDF
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Ablebond 84-1 LMISR4
Abstract: No abstract text available
Text: 08/23/2004 RELIABILITY REPORT FOR DS1812, Rev A7 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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Original
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DS1812,
JESD78,
Ablebond 84-1 LMISR4
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PDF
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Untitled
Abstract: No abstract text available
Text: 08/23/2004 RELIABILITY REPORT FOR DS1813, Rev A6 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected]
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DS1813,
JESD78,
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PDF
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3055 transistor
Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for
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D004T11
Q62702-U58
B--01
fl23Sb05
A23SbDS
B--03
3055 transistor
2N3055
M 3055 power transistor
transistor 3055
e 3055 t
3055 npn
power transistor 3055
on 3055
j 3055
power transistor IN 3055
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