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    microwave transistor S- parameter

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    Text: Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications up to 100 us pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness MFt 011B900Y QUICK REFERENCE DATA


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    100A101kp50x F1011B900Y microwave transistor S- parameter PDF