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F1303B Price and Stock

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JRH Electronics 447HS531NF1303B CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	447HS531NF1303B	Bulk			1	1 $701.47 10 $701.47 100 $701.47 1000 $701.47 10000 $701.47	Buy Now
JRH Electronics 440HJ030NF1303-B CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	440HJ030NF1303-B	Bulk			1	1 $1262.05 10 $1262.05 100 $1262.05 1000 $1262.05 10000 $1262.05	Buy Now
JRH Electronics 440HJ031NF1303-B CONNECTOR BACKSHELL
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DigiKey	440HJ031NF1303-B	Bulk			1	1 $1629.76 10 $1629.76 100 $1629.76 1000 $1629.76 10000 $1629.76	Buy Now
JRH Electronics 440HJ030NF1303-BT CONNECTOR BACKSHELL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	440HJ030NF1303-BT	Bulk			1	1 $1494.3 10 $1494.3 100 $1494.3 1000 $1494.3 10000 $1494.3	Buy Now
Glenair Inc 440GJ058NF1303-BT1 Circular MIL Spec Backshells ACCESSORIES - BANDING/CRIMP ADAPTER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	440GJ058NF1303-BT1					1 $1051.97 10 $614.1 100 $614.1 1000 $614.1 10000 $614.1	Get Quote
Newark	440GJ058NF1303-BT1	Bulk	2		1	1 $1064.98 10 $621.69 100 $270.3 1000 $270.3 10000 $270.3	Buy Now

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F1303B Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Q631 Abstract: NOV-97 682 FET Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1303B LOW NOISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . Schottky gate is designed fo r use in S to Ku band ampli fiers. The hermetically sealed metal-ceramic	OCR Scan	MGF1303B MGF1303B Q631 NOV-97 682 FET	PDF
251C Abstract: MGF1303B Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1303B LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel 4 M IN . 1.85 + 0.2 4 M IN . 0 .1 5 7 M IN . (0.0 7 3'± 0 .0 0 8) (0 .1 5 7 M IN .) Schottky gate is designed for use in S to Ku band ampli	OCR Scan	MGF1303B MGF1303B 12GHz 251C	PDF
M5M27C102 Abstract: M5M27C102P MGF1303B Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1303B LOW NOISE GaAs F E T DESCRIPTION O U TLIN E DRAWING The F1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli fiers. The hermetically sealed metal-ceramic package	OCR Scan	MGF1303B MGF1303B M5M27C102P RV-15 1048576-BIT 65536-W0RD 16-BIT) T-46-13-25 M5M27C102	PDF
F-1303 Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> i M G F1303Bj I f LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 3 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed fo r use in S to Ku band am pli fiers. The herm etically sealed metal-ceramic	OCR Scan	F1303Bj F-1303	PDF
MGF1303B Abstract: ku Band Power GaAs FET Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M F1303B LOW NO ISE GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F1303B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band ampli fiers. The hermetically sealed metal-ceramic 4M IN .	OCR Scan	MGF1303B MGF1303B 157MIN. 157ONDUCTOR 12GHz ku Band Power GaAs FET	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	MGF1903B MGF1903B F1303B.	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w noise G aAs FET w ith an N -c h a n n e l S c h o ttky gate, w hich is designed fo r use in S to Ku band Unit: millimeters inches	OCR Scan	F1903B F1303B 12GHz	PDF
MGF1903 Abstract: F-1303 mgf1903b Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING T h e M G F 1 9 0 3 B is a lo w n o is e G a A s F E T w ith a n N -c h a n n e t S c h o ttk y gate, w h ic h is designed fo r use in S to K u band 4.0 ± 0.2	OCR Scan	MGF1903B F1303B 12GHz MGF1903 F-1303 mgf1903b	PDF
MGF1903B Abstract: MGF1303B 903b mgf1903 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package	OCR Scan	MGF1903B MGF1303B. MGF1903B 12GHz MGF1303B 903b mgf1903	PDF