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Abstract: No abstract text available
Text: b S 4 T Û 2 cî 0017054 131 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1423B SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -channel S cho ttky ga te, is designed fo r use in S to Ku band am pli fiers. FEATURES
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F1423B
12GHz
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MGF1423B
Abstract: fet sm 367 KU 612 614 104 133 21 D094 MGF1423
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> F1423B SMALL SIGNAL GaAs FET DESCRIPTION T he M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -chann el S ch o ttky gate, is designed fo r use in S to Ku band am pli fiers. FEATURES • High linear power gain • High o utp ut power at 1 dB gain compression
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OCR Scan
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MGF1423B
MGF1423B,
13dBm
157MIN.
12GHz
MGF1423B
fet sm 367
KU 612
614 104 133 21
D094
MGF1423
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PDF
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