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    F20W50VX2

    Abstract: 2SK2196 F20W50 F20w mosfet 20A 500V
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P E-pack Case (Unit : mm) 500V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


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    2SK2196 F20W50VX2) F20W50VX2 2SK2196 F20W50 F20w mosfet 20A 500V PDF

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    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    2SK2196 F20W50VX2) PDF

    F20W50

    Abstract: 2SK2196 F20W50VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2196 F20W50VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : MTO-3P (Unit : mm) 500V 20A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original
    2SK2196 F20W50VX2) F20W50 2SK2196 F20W50VX2 PDF

    Untitled

    Abstract: No abstract text available
    Text: V X -H v U -X /X 7 -M 0 S F E T V X -tt SERIES POWER MOSFET • O U T L IN E DIM ENSIO NS Case : M T0-3P 2SK 2196 F20W50VX2 2 .2 ±os 5.0 ±a.3 j*3.3 *0-2 500v 20a 2,Q ±0.3 2 ,4to.3 0.65*02 - G a te • D r a in 5,45 ±0.2 5.45*m © - S o u rce [U n it i i


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    F20W50VX2) 2SK2196 PDF

    k2196

    Abstract: F20W50 mosfet 20A 500V F20W50VX2 F20w "Power Diode" 500V 20A 2SK2196 mosfet 500v 10A
    Text: V X - I v U - X / f 7 —MOSFET V X -1 SERIES POWER MOSFET O U T LIN E DIMENSIONS 2SK2196 F20W50VX2 500V 20 a • RATINGS A b s o lu t e M axim um R a tin g s ¿1 Item § Channel T em perature K U O • v -X flt D rain-S ource Voltage Y - b * V - XW T. G ate-S o u rce Voltage


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    2SK2196 F20W50VX2) K2196 k2196 F20W50 mosfet 20A 500V F20W50VX2 F20w "Power Diode" 500V 20A 2SK2196 mosfet 500v 10A PDF

    2SK2196

    Abstract: No abstract text available
    Text: V X -ïïv'J—X W -M O S F E T VX-n SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S C ase : M T 0 -3 P 2SK2196 F20W50VX2 5.0 ^ 03 500V 20a 2.0±03 2.4 ± D-3 0.65 ± ° 2 ■y'' fèfèm ■ [U n it ’ mm] R A TIN G S Absolute Maximum Ratings II


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    2SK2196 F20W50VX2) 2SK2196 PDF

    2SK2188

    Abstract: F10W90HVX2 2SK2669 2SK2196 F20w 2SK2177 FP7W90HVX2 2SK2182
    Text: ¡Ê fc -S lïi ü « R A T IN G S Teh V d s s V g s s Id DC EIA J No. Type No. «SlWflHÌ T c = 25"C E lectrical C h aracteristics Absolute Maximum Ratings [•c] [V ] [V ] P t R d s ON (max) Tc=25°C V g s = 1 0 V Id Iti C iss (typ) ton toff (typ) (typ)


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    2SK2177 2SK2178 2SK2179 2SK2180 2SK2181 2SK2182 2SK2183 2SK2184 2SK2185 2SK2186 2SK2188 F10W90HVX2 2SK2669 2SK2196 F20w FP7W90HVX2 PDF

    LM 340 TS

    Abstract: F20W50 2SK2196
    Text: V X - D v U - X / X 7 -M 0 S F E T V X -II SERIES POWER MOSFET • W fé '\li£[S] ■ O U T L IN E D IM E N S IO N S R A TIN G S ■ Absolute Maximum R atings m Item id n Symbol h unW st Storage Temperature ■f- A* Ï Channel Temperature K M > • V - XVgff;


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    2SK2196 F20W50VX2) LM 340 TS F20W50 2SK2196 PDF