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    F423 TRANSISTOR Search Results

    F423 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F423 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bv0T

    Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
    Text: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high


    Original     		50-MICRON PD658xx bv0T F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d PDF

    transistor f422

    Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
    Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for


    Original     		50-MICRON PD658xx transistor f422 transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe PDF

    transistor f422 equivalent

    Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
    Text: GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES 247 3 INTRODUCTION The SGS-THOMSON Graphics data book contains comprehensive data on three


    Original     		PDF

    F421

    Abstract: IRF423
    Text: iH A R R is IRF420, IRF421, IFJF422 IF^F423 s e m i c o n d u c t o r 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2 A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRF420, IRF421, TA17405. IFJF422 RF422, RF423 F421 IRF423 PDF

    transistor f423

    Abstract: F423 Philips F423 F423 transistor BF423 philips BF423 BF420 BF421 BF422 F-423
    Text: BF421 _ i V _ P HILI P S I N T E R N A T I O N A L 5bE D • ¿ F423 7 1 1 0 0 2 b 0 0 4 21 b 2 42S « P H I N SILICON EPITAXIAL TRANSISTORS T -J /-2 3 P-N-P transistors in plastic TO-92 envelope primarily intended for class-B video output stages in


    OCR Scan     		BF421 711002b 00421b2 BF420 BF422. BF421 BF423 7Z77434 transistor f423 F423 Philips F423 F423 transistor BF423 philips BF422 F-423 PDF

    F422

    Abstract: F423 F421 F-423 ir f422 UFNF422
    Text: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		D01Gfl75 UFNF420 UFNF421 UFNF422 UFNF423 UFNF423 F422 F423 F421 F-423 ir f422 PDF

    tr f422

    Abstract: F422 F423 UFNF422 ufnf420 F421
    Text: POWER MOSFET TRANSISTORS [J ™? 500 Volt, 3.0 Ohm UFNF422 UFNF423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rdsioih and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		UFNF422 UFNF423 UFNF420 UFNF421 tr f422 F422 F423 F421 PDF

    F423

    Abstract: F-423 F 423 BF421 BF423 transistors bf 423
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors BF421 BF423 PNP Silicon M AXIMUM RATINGS Rating Symbol BF421 BF423 Unit C o lle c to r-E m itte r Voltage v CEO -3 0 0 -2 5 0 V dc C o lle c to r-B a s e Voltage V C BO -3 0 0 -2 5 0 V dc E m itte r-B a s e Voltage


    OCR Scan     		BF421 BF423 BF421 F423 F-423 F 423 BF423 transistors bf 423 PDF

    transistor f423

    Abstract: sgsf323
    Text: 7qgqg37 o o s g is q ^ T * 3 M S SGSF323/IF323 SGSF423/IF423 S G S -T H O M S O N !D=D S G S-THOMSON 30E P FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H S W ITC H IN G SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ FOR FAST SWITCHING ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­


    OCR Scan     		7qgqg37 SGSF323/IF323 SGSF423/IF423 70kHz 500ms transistor f423 sgsf323 PDF

    IRF423

    Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
    Text: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:


    OCR Scan     		IRF420, IRF421, IRF422, IRF423 50V-500V IRF422 IRF423 IF422 ir*420 SM 3117 circuit diagram IRF420 IRF421 PDF

    F422

    Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
    Text: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input


    OCR Scan     		b427525 uPD65000 The//PD65000 T-42-11-09 //PD65000 //PD65003 juPD65002 fiPD65010 juPD65020 F422 transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744 PDF

    f422

    Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
    Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip


    OCR Scan     		uPD65000 //PD65003 juPD65002 fiPD65010 juPD65020 16-Pin 18-Pin 20-Pin 24-Pin 28-Pin f422 transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003 PDF

    upd6500

    Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
    Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5


    OCR Scan     		PDF

    b556

    Abstract: PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424
    Text: N E C 6427S2S N E C ELECTRONICS INC TÖ Ô Ê | L.M275ES QQlTTñM fl J ~ D V - ^ /Z - ìS ' Bi-CMOS-4 ADVANCED PROCESS b ì-c m o s g a t e a r r a y s ELECTRONICS INC 98D 17984 NEC Electronics Inc. February 1988 Description Features The Bi-CM O S-4 gate arrays feature the high speed of


    OCR Scan     		6427S2S M275ES bM27525 I7993 T-45W/-/5 b556 PD67000 2222 kn a PD67030 B558 pd67020 F314 AN b559 F304 F424 PDF

    F483

    Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
    Text: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the


    OCR Scan     		16k-bit 64k-bit IP-8001 F483 f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637 PDF

    CMOS-6A

    Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
    Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC


    OCR Scan     		IP-8090 CMOS-6A F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking PDF

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442 PDF

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425 PDF

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


    OCR Scan     		jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys PDF

    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


    OCR Scan     		65-micron D65806 PDF

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


    OCR Scan     		65-MICRON xPD65800 D65806 9215K1 PDF

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		PDF

    bv0T

    Abstract: 658X
    Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­


    OCR Scan     		b4E75S5 QQ3T701 nPD658xx bv0T 658X PDF

    transistor f422

    Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
    Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­


    OCR Scan     		iPD658xx transistor f422 transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK PDF