Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. SJW-F6 1. Scope The present specifications shall apply to an SJPW-F6. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 070903 1／5
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UL94V-0
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Untitled
Abstract: No abstract text available
Text: 2,5 SMCJ 160 . 2,5 SMCJ 180CA ,* @ 5 ; . Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units 5 : : * "5 F6: 2 F6: - .
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180CA
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4K diode
Abstract: No abstract text available
Text: 2,5 SMCJ 160 . 2,5 SMCJ 180CA ,* @ 5 ; . Absolute Maximum Ratings Symbol Conditions Surface mount diode Unidirectional and bidirectional Transient Voltage Suppressor diodes Values Units 5 : : * "5 F6: 2 F6: - .
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180CA
180CA
4K diode
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uge 1112 AY4
Abstract: din 74 f6 Diode f6 3132 ad general electric rectifier cooling 150C60B f6 rectifiers
Text: 1~ / 3~High Voltage Rectifiers Contents VRRM Circuit configuration VV RMS IF(AV)M 45°C 10 ms Type UGB UGD IFSM Page V V A A UGB 3132 AD UGB 6124 AG 4800 10500 2250 5000 1.3 1.0 60 50 F6 - 1 F6 - 1 UGD 6123 AG UGD 8124 AG 7200 10500 3300 5000 1.8 1.2 50
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Untitled
Abstract: No abstract text available
Text: F6-15R12KF Transistors Full Bridge IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.2k V(BR)GES (V)20 I(C) Max. (A)15 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)125 Thermal Resistance Junc-Case167m I(CES) Min. (A)200u
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F6-15R12KF
Junc-Case167m
time700n
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SMA 905 fiber dimensions
Abstract: SMA 905 Connector
Text: TH-C1830-F6 30W CW FIBER COUPLED LASER DIODES DESCRIPTION The TH-C1830-F6 product is a high optical power fiber coupled laser diode source. The CW power delivered is 30W. Such power output is very suitable for applications which request high brightness sources: efficient pumping
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TH-C1830-F6
TH-C1830-F6
8024-ed2
SMA 905 fiber dimensions
SMA 905 Connector
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1S1585
Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80
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OT-23MOD,
OT-143MOD.
1S1585
107YP
1SS239
1S1585 equivalent
1SV147
1ss193 equivalent
1SS SOT mark
1SS337 J9
1SV99
1SV103
1SS241
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S3 DIODE schottky
Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching
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1SS300
1SS301
1SS302
1SS322
1SS357
1SS367
1SS370
1SS372
1SS378
HN1D01FU
S3 DIODE schottky
S4 DIODE schottky
2SA1015
MARK MQ
1S1585
common anode schottky diode
DIODE MARK B
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8 A 123
Abstract: DIODE BZ F6-8R10K
Text: 7 = 3 9 -3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module
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F6-8R10K
00002b7
15Vits
8 A 123
DIODE BZ
F6-8R10K
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Untitled
Abstract: No abstract text available
Text: 1 F6-8R12KF EUPEC SEE D Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum permissible values V 1200 •c ^ • 34032^7 0QDD2t.fi DS7 « U P E C m Thermische Eigenschaften Thermal properties DC, pro Baustein / per module
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F6-8R12KF
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Untitled
Abstract: No abstract text available
Text: 7= 39- 3 / F6-8R10K EUPEC SEE Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values V ces •c D • 3M032T7 GDDDEb? 110 H U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein/p er module
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F6-8R10K
3M032T7
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Lampe diode philips
Abstract: sera HF amplifir Philips schema 158X tube cathodique philips tube cathodique culot
Text: PH ILIPS RADIO La p enth od e E F6 La lampe EF 6 convient particulièrement pour Tamplification basse fréquence ou comme détectrice par caractéristique de plaque ou de grille, dans les récepteurs pour secteur alterna tif, pour secteurs tous courants et aussi pour les
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mm glass lens phototransistor
Abstract: wo f6 DIODE
Text: SIEMENS BPX43 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .244 (6.2) .212 (5.4) .570(1451 .492 (12.5) -U ¿0 0 (5 .1 ) 9 (4.8) V 0.100,-(2.54)'- T 0.01 * f6 (0.45) Base '‘Collector 0 .18 9(4.6) 0.181 (4.6) I-106, w .220 (5.6) .206 (5.3)
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BPX43
I-106,
mm glass lens phototransistor
wo f6 DIODE
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ST-12
Abstract: Scans-0017340
Text: I MAX.* R C A - I F6 DUPLEX-DIODE PENTODE T ie 1F6 is a duplex-diode pentode consisting of two diodes and a pen tode in a single bulb. It is recom mended for service as a combined detector, amplifier radio-frequency, intermediate-frequency or audio-frequency , and automatic-volume-control tube in
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LT1172 boost converter 60v
Abstract: LT1170 boost converter 12v dc LT1170CT AN19 snubber capacitor applications 110092 LT1170 COILTRONICS 50-2-52 LT1171 buck S8 Package LT1170
Text: Linç/\B LT1170/LTÏI71 /LT1172 TECHNOLOGY ] 00kHz, 5A, 2.5A a n d 1.25A High Efficiency S w itch ing R egulators F6 ÌTUft€S DCSCMPTIOn • Wide Input Voltage Range: 3V to 60V ■ Low Quiescent Current: 6mA ■ Internal 5A Switch (2.5A fo r LT11 7 1 ,1.25A forLT1172
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LT1170/LT1171
/LT1172
00kHz,
LT1171
50jjA
LT1172
LT1170
551fl4bfl
0Q10M5E1
LT1172 boost converter 60v
LT1170 boost converter 12v dc
LT1170CT
AN19
snubber capacitor applications
110092
LT1170
COILTRONICS 50-2-52
LT1171 buck
S8 Package LT1170
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MOSFET irf 939
Abstract: irf610
Text: HE D I 4ÔS54S2 GaGfl4bb Data Sheet No. PD-9.326H 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IR F6 1 Q IRFS1 1 IRF6 1 2 N-CHANNEL IRFG1 3 200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package
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S54S2
T0-220AB
IRF611
IRF612
IRF613
IRF610
IRF610,
IRF611,
IRF612,
IRF613
MOSFET irf 939
irf610
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Untitled
Abstract: No abstract text available
Text: S G S-THOilSON Æfî 42E P 7^2^37 QG3- 3SÛS □.• S6TH T -*f6 -Û ? -0 5 S G S -TH O ^S O ^ T74LS295A iû 4-BIT SHIFT REGISTER WITH 3-STATE OUTPUTS ■ FULLY SYNCHRONOUS SERIAL OR PARAL LEL DATA TRANSFERS ■ NEGATIVE EDGE-TRIGGERED CLOCK INPUT ■ PARALLEL ENABLE MODE CONTROL INPUT
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T74LS295A
T74LS295A
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edal series f6
Abstract: dk d05 F5B3 F3F3 f5g3 F7G3 F7K3
Text: 1 309571 6 EDAL _TS INDUSTRIES INC 95D 00223 D » e | 30TS71h 0000223 3 | ~ EDAL Series F3, F4, F5, F6, F7 ^ n ^ ^ ^ ^ R ífíe rs Edal Series F power rectifiers are stud mounted D O -5 packages, Because the sili con junction is carefully fitted within a glassto-m etal herm etically sealed case, reliable
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30TS71b
edal series f6
dk d05
F5B3
F3F3
f5g3
F7G3
F7K3
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3RF21
Abstract: No abstract text available
Text: FEATURES • 2 0 - 4 0 0 MHz ■T j F J ■ Small 16 Pin DIP ■ Low Cost PIN Diode ■ Low Current Consumption RF1 3 RF2 Ò Ô 4 CONTI 2 CONT2 RF3 16 1 RF4 14 R F6 RF5 Ò ÓÒÒ 15 CONT3 13 CONT4 5 j RF7 10 12 11 CONT5 8 Ò Ò 9 CONT8 7 CONT7 6 G ND RF COM
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/MCMC29
3RF21
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RN2226
Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package
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2SC1815
2SC1815
2SA1015
OT-23MOD.
/RN1501
VRN2501/
RN1502
RN2502
RN1503
RN2226
2sa1015 sot-23
rn4601
diode 2sa1015
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1BW TRANSISTOR
Abstract: C2E1 F6-8R06KF
Text: T - 3 9 - 3 f F6-8R06KF SSE EU P EC D 34032T7 □□□□Ebb Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 8 A 16 A 50 W tv jo p ts tg = 1ms IcR M tp Ptot t c = 25°C *U P E C 1 50 - 4 0 /+ 150
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F6-8R06KF
34D32CI7
1BW TRANSISTOR
C2E1
F6-8R06KF
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ultra low drop forward voltage diode
Abstract: KCF60A20E c60a
Text: FAST RECOVERY DIODE 6 0 A /2 0 0 V /trr : 50nsec K C F6 0 A20 E FEATURES o Sim ilar to TO-247AC x 2 Case o Dual Diodes-Cathode Common O U ltra-Fast Recovery OLow Forw ard V oltage Drop o High Surge Capability D im e n s io n s i n mm I n c h e s ] A p p ro x . N e t W e ig h t : 30 Grams
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0A/200V/trr
50nsec
KCF60A20E
O-247AC
bblS123
ultra low drop forward voltage diode
KCF60A20E
c60a
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE C6P10 F C6P20F F6 P 10 F F6P20F 6 .6 A /1 0 0 — 2 0 0 V /tr r : 30nsec FEATURES 0 S i m i l a r to T 0 - 2 2 0 A B Case °Fully Mold Isolation ° D ual D i o d e s F-Type - Cathode Common ° Ultra - Fast Recovery ° L o w F o r w a r d V o l t a g e Dro p
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30nsec
C6P10
C6P20F
F6P20F
F6P10F
F6P20F
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LT1231
Abstract: LT1280CS LT1280CN LT12811 LT1281 LT1130 LT1180 LT1181 LT1280 LT1281CS
Text: LINEAR r TECHNOLOGY j CORP u n xm TECHNOLOGY 20E D • S51fl4bfl T" l e ^ G - ö S 00040^ b ■ LT1280/LT1281 A d v a n ce d Low Power 5V RS232 Dual Driver/Receiver F6 A T U R C S D C S C R IP T IO A ■ 10 m A M ax Supply Current The LT1280 and L.T1281 are the only dual RS232 driver/
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LT1280/LT1281
RS232
Power-35mW
LT1280
LT1281
16-Lead
U1281MJ
LT1281CJ
LT1231
LT1280CS
LT1280CN
LT12811
LT1130
LT1180
LT1181
LT1281CS
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