marking code micron label
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device
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09005aef80f935e6
MT28C64416W18AFY
marking code micron label
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb MULTIBANK ASYNC/PAGE FLASH 16Mb ASYNC CellularRAM MEMORY FLASH AND CellularRAM COMBO MEMORY MT28C64416W18AFY Low Voltage, Wireless Temperature Features Figure 1: 68-Ball FBGA Stacked die Combo package • Includes one 64Mb Flash device • Includes one 16Mb CellularRAM device
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MT28C64416W18AFY
68-Ball
09005aef80f935e6
MT28C64416W18AFY
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CSWA2-63DR
Abstract: Mini-circuits marking code mcl 80-63d is373 PL-279 is 373 TB-461 dg1293 CSWA263DR CMOS 4000 voltage
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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CSWA2-63DR+
DG1293
2002/95/EC)
PL-279
TB-461+
ENV40
CSWA2-63DR
Mini-circuits marking code
mcl 80-63d
is373
is 373
TB-461
CSWA263DR
CMOS 4000 voltage
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mcl 80-63d
Abstract: CSWA2-63DR
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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CSWA2-63DR+
DG1293
2002/95/EC)
PL-279
TB-461+
ENV40
mcl 80-63d
CSWA2-63DR
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Micron flash
Abstract: marking code micron label marking W18
Text: PRELIMINARY‡ 64Mb MULTIBANK BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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16Mb/32Mb/64Mb
09005aef80bcd58d
MT28C64432W18A
Micron flash
marking code micron label
marking W18
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mcl 80-63d
Abstract: Mini-circuits marking code CSWA2-63DR is373 F70 marking
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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Original
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PDF
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CSWA2-63DR+
DG1293
2002/95/EC)
PL-279
TB-461+
ENV40
mcl 80-63d
Mini-circuits marking code
CSWA2-63DR
is373
F70 marking
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w18 SMD
Abstract: W18 SMD MARKING CODE INTEL flash part MARKING marking code micron label cub smd Flash Controller Micron micron part marking decoder
Text: 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A ADVANCE‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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16Mb/32Mb/64Mb
09005aef80c9c807
MT28C64432W18A
w18 SMD
W18 SMD MARKING CODE
INTEL flash part MARKING
marking code micron label
cub smd
Flash Controller Micron
micron part marking decoder
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MICRON fBGA package code
Abstract: INTEL flash part MARKING marking code micron label MT28C64432
Text: PRELIMINARY‡ 64Mb MULTIBANK ASYNC/PAGE OR BURST FLASH 16Mb/32Mb/64Mb ASYNC/PAGE CellularRAM FLASH AND CellularRAM COMBO MEMORY MT28C64416W18/W30A PREVIEW‡‡ MT28C64432W18/W30A MT28C64464W18/W30A Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA
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16Mb/32Mb/64Mb
09005aef80c9c807
MT28C64432W18A
MICRON fBGA package code
INTEL flash part MARKING
marking code micron label
MT28C64432
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Untitled
Abstract: No abstract text available
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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CSWA2-63DR+
DG1293
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INFINEON "part marking"
Abstract: marking code micron label
Text: PRELIMINARY‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
09005aef80b10a55
MT28C128564W18E
INFINEON "part marking"
marking code micron label
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Untitled
Abstract: No abstract text available
Text: Ceramic, Hermetic SPDT RF Switch 50Ω500-6000MHz AbsorptiveRFSwitchwithinternaldriver. SingleSupplyVoltage,+3Vto+5V Product Features •Widebandwidth,500to6000MHz •HighIsolation,65dBtyp.at1GHz
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CSWA2-63DR+
DG1293
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Untitled
Abstract: No abstract text available
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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CSWA2-63DR+
DG1293
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w18 SMD
Abstract: w18 smd transistor smd transistor w18 marking W18 w18 transistor smd
Text: 128Mb MULTIBANK BURST FLASH 32Mb/64Mb BURST CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30E MT28C128564W18/W30E Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA Stacked die Combo package • Includes two 64Mb Flash devices
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128Mb
32Mb/64Mb
MT28C128532W18/W30E
MT28C128564W18/W30E
77-Ball
09005aef80df9a45
MT28C128564W18E
w18 SMD
w18 smd transistor
smd transistor w18
marking W18
w18 transistor smd
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is373
Abstract: 63-DR CSWA2-63DR
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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CSWA2-63DR+
DG1293
is373
63-DR
CSWA2-63DR
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|
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cswa2-63dr
Abstract: dg1293 mcl 80-63d JESD22-A114 JESD22-A115 N5230A 80-63D is373
Text: Ceramic, Hermetic SPDT RF Switch 50Ω 500-6000 MHz Absorptive RF Switch with internal driver. Single Supply Voltage, +3V to +5V Product Features • Wide bandwidth, 500 to 6000 MHz • High Isolation, 65 dB typ. at 1 GHz • Low insertion loss, 1.0 dB typ.
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CSWA2-63DR+
DG1293
2002/95/EC)
cswa2-63dr
dg1293
mcl 80-63d
JESD22-A114
JESD22-A115
N5230A
80-63D
is373
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Mini-circuits marking code
Abstract: AH1415 OF MINICIRCUITS AVA-24 Mini-circuits marking code MBA-12 Mini-circuits date code MC1631
Text: Tape & Reel Packaging For Surface Mount Devices A utomation of surface-mount assembly by the use of pick-and-place equipment to handle tiny components has been enhanced by evolutionary improvements in tape-and-reel systems which can accommodate as many as 4000 parts on a 13-inch
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13-inch
D4-D041
M151620
D4D041
Mini-circuits marking code
AH1415
OF MINICIRCUITS AVA-24
Mini-circuits marking code MBA-12
Mini-circuits date code
MC1631
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Untitled
Abstract: No abstract text available
Text: CMF Non-Magnetic www.vishay.com Vishay Dale Metal Film Resistors, Non-Magnetic, Industrial, Precision FEATURES • • • • • • • Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Available Excellent high frequency characteristics
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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STR 6656
Abstract: transistor str 6656 13001 TRANSISTOR Transistor mcr 22-8 413 mark 74w npn SI 13003 str 12006 atmel 0744 13001 TRANSISTOR equivalent str 10006
Text: Version 2.0 Produced in June 1997 R SSharp Programmable Controller New Satellite JW10 User's Manual We thank you for your purchase of the SHARP programmable controller JW10. Carefully read this user's manual and the JW10 instruction manual attached to the system
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ZM-40D/L,
ZM-61E/T,
ZM-70D/T
Appendix17
ZM-31SE)
RS422]
Appendix18
STR 6656
transistor str 6656
13001 TRANSISTOR
Transistor mcr 22-8 413
mark 74w npn
SI 13003
str 12006
atmel 0744
13001 TRANSISTOR equivalent
str 10006
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Untitled
Abstract: No abstract text available
Text: MODEL CMF Metal Film Resistors Military, MIL-R-10509 Qualified, Type RN Military, MIL-R-22684 Qualified, Type RL FEATURES • Very low noise • Very low voltage coefficient • Controlled temperature coefficient • Excellent high frequency characteristics
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MIL-R-10509
MIL-R-22684
10-100k
9-100k
-150k
10-1M
10-2M
200PP
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Untitled
Abstract: No abstract text available
Text: S A W 7 -f l/ £ SAW Filter) KSS L S F B 4 4 -4 2 6 -8 0 0 K 0 / LS FB 4 4 -4 2 9 -8 0 0 K 0 LS FA 02-4 34-002 M 0 / LS FA 0 2 -4 2 2 -8 0 0 K 0 LS FA 0 2 -4 4 0 -4 0 0 K 0 / LSFB20-469-001 MO /Jv'E ^)ffl400M H z^:/4 0 0 M H z Band SAW Filter of Low power consumption
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OCR Scan
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PDF
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LSFB20-469-001
ffl400M
400kHz
LSFB44
LSFA02
LSFB20
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mil grade resistors
Abstract: mq49
Text: Q00 PRECISION METAL FILM RESISTORS MF SERIES MIL-Grade Performance Levels! FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Wide resistance range: 1 .OQ to 22.1 Meg TC ±2 5 to ± 100 PPM standard. Matching to 10 PPM Tolerances + . 1°/o to +1 %. Matching to .02%
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MILR-10509F
mil grade resistors
mq49
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Untitled
Abstract: No abstract text available
Text: PRECISION METAL FILM RESISTORS RESISTORS ♦ CAPACITORS * COtLS * DELAY LINES MF SERIES □ □ □ □ □ □ □ □ Wide resistance range: 1.00 to 22.1 Meg TC ±25 to ±100ppm standard, matching to 10ppm Precision quality, excellent stability, reasonable cost
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100ppm
10ppm
MIL-R-10509
RS-460
Mil-PRF-55182
100KO,
10Mfi
100H-100K
25ppm,
50ppm,
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MARKING 5C0
Abstract: No abstract text available
Text: T L C O M P A T IB L E * ECOVERY GENERATOR # T2L in p u t and o u tp u t # Pulse w id th s stable and precise # High o u tp u t d uty cycles # 8-pin Space Saver package fo r at least 10ns to o b ta in the d e sire d o u tp u t pulse. The d uration of the p o sitive in p u t pulse, a fte r th is tim e, has no
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500ns
MARKING 5C0
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LH645C2Z
Abstract: sharp LH6
Text: i * SHARP toa 1« SHARP LH645C2Z •Handle this document carefully for it contains material protected by international copyright la». Any reproduction. Full or in part, of this material is prohibited without the express written permission of the company.
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LH645C2Z
ZIP20-P-400
AA1009
P20SPN
CV666
LH645C2Z
sharp LH6
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