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    Amphenol Industrial Operations ACA3106E36-5PB(F80)(072)(F42)

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    Amphenol Industrial Operations ACA3101F18-1PB(F80)(072)(F42)

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    Amphenol Industrial Operations ACA3106E24-12PYB(F80)(072)(F42

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    Amphenol Industrial Operations ACA3106E18-11PB(F80)(072)(F42)

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    F8007 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DIN-46228 T3

    Abstract: No abstract text available
    Text: Insulated Ferrules Insulated Twin Ferrules Cat. No. F8000 F8001 F8002 F8003 F8005 F8006 F8007 F8008 F8009 F8010 F8011 Conductor Section AWG MM2 2x 20 2x 18 2x 18 2x 17 2x 17 2x 16 2x 16 2x 14 2x 14 2x 12 2x 10 2x 0.50 2x 0.75 2x 0.75 2x 1.00 2x 1.00 2x 1.50


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    F8000 F8001 F8002 F8003 F8005 F8006 F8007 F8008 F8009 F8010 DIN-46228 T3 PDF

    brass properties

    Abstract: F8007 MCM 2128 BU 2735 AS F2034 resistivity wire nichrome UL486E table 14.1 F4020 UL486E ACS 0865
    Text: NEMA Terminal Blocks Technical Summary TERMINAL BLOCK OR PRODUCT LINE CONTACT TYPE MATERIAL PLATE SCREW STYLE High Density Tubular Clamp Electroplated Tubular Copper Contact 6-32 Slotted Head Screw 033” Wide x .040” Deep Steel Steel Electroplated .020”


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    105-BU UL486E UL1059 brass properties F8007 MCM 2128 BU 2735 AS F2034 resistivity wire nichrome UL486E table 14.1 F4020 ACS 0865 PDF

    DL161

    Abstract: DL162 DL163
    Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations — Data can be continuously read from one bank while


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    Am29DL16xD 16-Bit) Am29DL164D Am29DL162D DL161 DL162 DL163 PDF

    M410000002

    Abstract: DL161 DL162 DL163 m410000009 AM29DL164DT
    Text: Am41DL16x4D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am41DL16x4D M410000002 DL161 DL162 DL163 m410000009 AM29DL164DT PDF

    DL161

    Abstract: DL162 DL163 AM29DL164DT M4200
    Text: Am42DL16x2D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am42DL16x2D FLA069--69-Ball DL161 DL162 DL163 AM29DL164DT M4200 PDF

    DS42546

    Abstract: No abstract text available
    Text: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS


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    DS42546 Am29DL163D 16-Bit) 69-Ball DS42546 PDF

    164D48

    Abstract: DL162 DL163 D163D
    Text: Am29DL162D/163D/164D 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations


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    Am29DL162D/163D/164D 16-Bit) Am29DL16xC Am29DL16xD 164D48 DL162 DL163 D163D PDF

    S29JL032

    Abstract: DL161 DL162 DL163 S29JL032H S29PL032J S29PL-J D162DT90 D163DB70 D164DB70
    Text: Am29DL16xD Data Sheet Retired Product Am29DL16xD Cover Sheet This product family has been retired and is not recommended for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL16xD and is the factoryrecommended migration path. Please refer to the S29JL032H data sheet for specifications and ordering information.


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    Am29DL16xD S29JL032H S29PL032J S29PL-J 21533E6 S29JL032 DL161 DL162 DL163 D162DT90 D163DB70 D164DB70 PDF

    IEC61754-20

    Abstract: PBT 20 GF EN 1303 dust cap LC EN50173 61224 IEC-61754-20 052298
    Text: www.geraetebau.telegaertner.com ca. 30 Fax: +49 35055/61224 13,2 15,6 Alle Rechte vorbehalten / all rights reserved Telegärtner Gerätebau GmbH D-01774 Höckendorf Frauenstrasse 1 Germany Phone: +49 35055/682-0 6,25 Verpackung Packing 1 Stück im PE-Beutel mit Montagehinweis


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    D-01774 F80074A0001 IEC61754-20 PBT 20 GF EN 1303 dust cap LC EN50173 61224 IEC-61754-20 052298 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29DS163D Data Sheet Retired Product Am29DS163D Cover Sheet This product has been retired and is not recommended for designs. For new and current designs please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only.


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    Am29DS163D PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations


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    Am29DL16xD 16-Bit) VBF048 PDF

    giga Ethernet PHY RGMII

    Abstract: 88E1111 GMII config giga pc MOTHERBOARD pcb diagram schematic S29GL256N11TFIV2 marvel phy 88e1111 reference design MPC8568 88E1111 PHY registers map 88E1111 S29GL256N11TFI020 usb to rj45 extenders
    Text: MPC8568E MDS Processor Board User’s Guide Rev. 0.3 06/2007 MPC8568E MDS Processor Board, Rev. 0.3 Freescale Semiconductor Chapter 1 General Information 1.1 Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    MPC8568E giga Ethernet PHY RGMII 88E1111 GMII config giga pc MOTHERBOARD pcb diagram schematic S29GL256N11TFIV2 marvel phy 88e1111 reference design MPC8568 88E1111 PHY registers map 88E1111 S29GL256N11TFI020 usb to rj45 extenders PDF

    88E1111-B2-BAB1C000

    Abstract: 88E1111B2BAB1C000 88E1111-B2 -BAB-1I000 88E1111-B2 88E1111-B2-BAB 88E1111 Marvell PHY 88E1111 bsdl 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell PHY 88E1111 Datasheet
    Text: MPC8569E-MDS-PB HW User Guide June 2009 Rev. 1.0 MPC8569E-MDS-PB Moduled Development System Processor Board HW User Guide Version 1.0 Freescale Semiconductor Table of Contents General Information Table of Contents List of Figures v List of Tables vii Chapter 1


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    MPC8569E-MDS-PB 88E1111-B2-BAB1C000 88E1111B2BAB1C000 88E1111-B2 -BAB-1I000 88E1111-B2 88E1111-B2-BAB 88E1111 Marvell PHY 88E1111 bsdl 88E1111 PHY registers map marvel phy 88e1111 reference design Marvell PHY 88E1111 Datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations


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    Am29DL162C/Am29DL163C 16-Bit) PDF

    DL161

    Abstract: DL162 DL163 D163DB70
    Text: Am29DL16xD Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29DL16xD DL161 DL162 DL163 D163DB70 PDF

    QE R523

    Abstract: diode QE r637 diode QE R615 QE r637 QE R611 qe r542 QE R549 Qe R532 QE R552 QE R644
    Text: Freescale Semiconductor Hardware Getting Started Guide Document Number: MPC8569E-MDS-PB_HGS Rev. 3.1 MPC8569E-MDS-PB This document describes the MPC8569E-MDS-PB and its related hardware kit. The MPC8569E-MDS-PB getting started procedure explains and verifies the board’s basic


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    MPC8569E-MDS-PB MPC8569E-MDS-PB QE R523 diode QE r637 diode QE R615 QE r637 QE R611 qe r542 QE R549 Qe R532 QE R552 QE R644 PDF

    LC-Connector

    Abstract: No abstract text available
    Text: www.geraetebau.telegaertner.com 13,15 Fax: +49 35055/61224 10,3 ca. 59 Alle Rechte vorbehalten / all rights reserved Telegärtner Gerätebau GmbH D-01774 Höckendorf Frauenstrasse 1 Germany Phone: +49 35055/682-0 6,25 Verpackung Packing 1 Satz im PE-Beutel mit Montagehinweis


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    D-01774 F80073A0001 LC-Connector PDF

    DL161

    Abstract: DL162 DL163
    Text: Am29DL16xD Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


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    Am29DL16xD VBF048 DL161 DL162 DL163 PDF

    Am29DL162CB

    Abstract: No abstract text available
    Text: PRELIMINARY Am29DL162C/Am29DL163C 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations


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    Am29DL162C/Am29DL163C 16-Bit) Am29DL162CB PDF

    D164DB70

    Abstract: d162dt90
    Text: Am29DL16xD 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES — 10 mA active read current at 5 MHz — 200 nA in standby or automatic sleep mode • Simultaneous Read/Write operations


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    Am29DL16xD 16-Bit) D164DB70 d162dt90 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am42DL16x2D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 2 Mbit (128 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features


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    Am42DL16x2D Am29DL16xD 16-Bit) 69-Ball PDF

    gsc840

    Abstract: No abstract text available
    Text: Index CATALOG NUMBER PAGE NUMBER 101A. . . . . . . . . . . . . . . . . . . . 74 101AG . . . . . . . . . . . . . . . . . . 74 101B. . . . . . . . . . . . . . . . . . . . 74 101BG . . . . . . . . . . . . . . . . . . 74 10RC-10. . . . . . . . . . . . . . . . . 11


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    101AG 101BG 10RC-10. 10RC-10CP 10RC-10F. 10RC-10FCP 10RC-10FL 10RC-10FLX 10RC-10FX 10RC-10X gsc840 PDF

    M410000002

    Abstract: DL161 DL162 DL163 AM41DL1644DT
    Text: PRELIMINARY Am41DL16x4D Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL16xD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS


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    Am41DL16x4D Am29DL16xD 16-Bit) 8-Bit/256 69-Ball M410000002 DL161 DL162 DL163 AM41DL1644DT PDF

    P03P

    Abstract: No abstract text available
    Text: PART NUMBER UNCONTROLLED DOCUMENT LD S-F8007R I-U SB CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D, HANDLING PROCEDURES WHEN WORKING WITH THIS PART. PIN 1 REV. 8,50 E0.335] 4,50 E0.177] PIN 18 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C PARAMETER PEAK WAVELENGTH


    OCR Scan
    LDS-F8007RI-USB P03P PDF