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    BUK455

    Abstract: BUK455-600B BUK455-600A BUK455 600b T0220AB BUK455 600
    Text: N AMER P H I L I P S / D I S C R E T E 25E D • ^5 3 = 1 3 1 0 0 2D S1 5 1 ■ PowerMOS transistor BUK455-600A BUK455-600B r ^ 2 i-} 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    bb53T31 BUK455-600A BUK455-600B T-21-i3 BUK455 -600A -600B BUK455 600b T0220AB BUK455 600 PDF

    CNX48

    Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
    Text: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features


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    bbS3T31 CNX48 CNX48U. 7Z88208 CNX48 transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U PDF

    BUK455-600B

    Abstract: BUK455-600A BUK455 T0220AB
    Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


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    00SD515 BUK455-600A BUK455-600B T-21-13 BUK455 -600A -600B BUK455-600B BUK455-600A T0220AB PDF