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    FAIRCHILD POWER BJT DATASHEET Search Results

    FAIRCHILD POWER BJT DATASHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD POWER BJT DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = -4.5 V, ID = -2.9 A This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable


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    fairchild power bjt

    Abstract: bjt specifications
    Text: FDMA1430JP Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = -4.5 V, ID = -2.9 A This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable


    Original     		PDF FDMA1430JP FDMA1430JP fairchild power bjt bjt specifications

    BJT with V-I characteristics

    Abstract: fairchild power bjt FDMA1430JP BJT characteristics bjt specifications
    Text: Integrated P-Channel PowerTrench MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = -4.5 V, ID = -2.9 A This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable


    Original     		PDF FDMA1430JP FDMA1430JP BJT with V-I characteristics fairchild power bjt BJT characteristics bjt specifications

    Untitled

    Abstract: No abstract text available
    Text: User Guide for FEBFHR1200_SPG01A Evaluation Board High-Performance Shunt Regulator Featured Fairchild Product: FHR1200 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2014 Fairchild Semiconductor Corporation


    Original     		PDF FEBFHR1200 SPG01A FHR1200

    crt horizontal deflection circuit

    Abstract: flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver
    Text: September 19, 2000 AN9009 Analysis of a Resonant Type High Voltage Fly-back Converter in a CRT Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea Semiconductor Tel: 82-32-680-1380, Fax:82-32-680-1317


    Original     		PDF AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list AN9009 fairchild power bjt circuit diagram of crt monitor yoke coil POWER BJTs KDS5072 zvs flyback driver

    P-Channel IGBT

    Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
    Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .


    Original     		PDF

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		PDF AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion

    all mosfet equivalent book

    Abstract: P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion
    Text: November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 2


    Original     		PDF AN9010 all mosfet equivalent book P-Channel Depletion Mosfets free transistor equivalent book free all transistor equivalent book n mosfet depletion 600V P-Channel Depletion Mode Field Effect Transistor fairchild power bjt datasheet MOSFET 800V 10A vmosfet n Power mosfet depletion

    crt horizontal deflection circuit

    Abstract: transistor 9009 AN9009 fairchild power bjt power BJT 1500v KSD5702
    Text: KSD5702 KSD5702 High Voltage Color Display Horizontal Deflection Output Damper Diode Built In • High Collector-Base Voltage : VCBO=1500V • High Switching Speed tF = 0.4µs (Max.) • For Color TV Equivalent Circuit C B TO-3PF 1 50Ω typ. 1.Base 2.Collector


    Original     		PDF KSD5702 KSD5702 AN-9009: AN-9009 crt horizontal deflection circuit transistor 9009 AN9009 fairchild power bjt power BJT 1500v

    smps 1000W

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits smps design 1000w smps 1000W fet AN-7010 FGP20N60S2D smps 1000w circuit FCP11N60 Equivalent CCM PFC inductor analysis FQA28N50F
    Text: www.fairchildsemi.com AN-7010 Choosing Power Switching Devices for SMPS Designs MOSFETs or IGBTs? By Ron Randall, Staff Applications Engineer, Fairchild Semiconductor Introduction Turn-On Losses This article identifies the key parametric considerations for


    Original     		PDF AN-7010 smps 1000W the calculation of the power dissipation for the igbt and the inverse diode in circuits smps design 1000w smps 1000W fet AN-7010 FGP20N60S2D smps 1000w circuit FCP11N60 Equivalent CCM PFC inductor analysis FQA28N50F

    fairchild power bjt

    Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver


    Original     		PDF FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor

    Untitled

    Abstract: No abstract text available
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition


    Original     		PDF FJP2160D FJP2160D

    Untitled

    Abstract: No abstract text available
    Text: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when


    Original     		PDF FJP2145 FDC655 FJP2145

    calculation of IGBT snubber

    Abstract: RCD snubber P-Channel IGBT arc welder inverter spot welder circuit diagram full bridge arc welder ARC WELDER RC VOLTAGE CLAMP snubber circuit pwm INVERTER welder RC snubber ac motor
    Text: Application Note 9020 April, 2002 IGBT Basic II By K.J Um CONTENTS Section I. Gate drive considerations 1. Introductions 2. Gate Drive Considerations 3. IGBT switching waveforms A. Analysis of turn-on transient 4. Gate drive design basics A. VGG+ a. Effect on-state


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    Untitled

    Abstract: No abstract text available
    Text: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when


    Original     		PDF FJPF2145 FDC655 FJPF2145

    flyback pfc operate in ccm

    Abstract: 6203 regulator SG6203 SG6902 high efficiency rectifier 100v 1a 12V to 110V transformer zero crossing detector in rectifier circuit SG6902 EQUIVALENT 1N4148 FR102
    Text: www.fairchildsemi.com AN-6203 Applying SG6203 to Control a Synchronous Rectifier of a Flyback Power Supply Abstract VCC IN+ This application note describes a detailed design strategy for a high-efficiency compact flyback converter. Design considerations and mathematical equations are presented. A


    Original     		PDF AN-6203 SG6203 SG6203. IAO37 flyback pfc operate in ccm 6203 regulator SG6902 high efficiency rectifier 100v 1a 12V to 110V transformer zero crossing detector in rectifier circuit SG6902 EQUIVALENT 1N4148 FR102

    c 945 TRANSISTOR equivalent

    Abstract: FDC655 fairchild power bjt ignition drivers
    Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,


    Original     		PDF FJBE2150D FDC655 c 945 TRANSISTOR equivalent fairchild power bjt ignition drivers

    IXAN0063

    Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
    Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.


    Original     		PDF IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425

    d 42030 transistor

    Abstract: AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817
    Text: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units V Collector-Base Voltage : BUT11 : BUT11A


    Original     		PDF BUT11/11A O-220 BUT11 BUT11A BUT11 AN-758: AN-758 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild crt horizontal deflection circuit AN-7528 9019 transistor FAN6800 BUT11A spice AN817

    Quasi-resonant Converter for induction cooker

    Abstract: IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter
    Text: The Power Franchise Summer - 2002 FEATURED IN THIS ISSUE 1200V Stealth fast/soft recovery avalanche energy rated diodes . . . Page 4 Trench MOSFETs for 42V automotive applications . . . Page 5 Bottomless SO-8 Package PowerTrench family . . . Page 6 .And More! . . . Page 7 and 8


    Original     		PDF Semiconducto01 Quasi-resonant Converter for induction cooker IGBT 60A spice model 1000V igbt dc to dc buck converter CAR IGNITION WITH IGBTS 10 kw schematic induction heating Quasi-resonant Converter induction cooker applications FQPF18N50 1 kw schematic induction heating 600V igbt dc to dc buck converter pwm igbt based ac-dc converter

    ka3525 12v to 230v inverters circuit diagrams

    Abstract: smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram
    Text: AC/DC Switch Mode Power Supply Design Guide www.fairchildsemi.com AC/DC Switch Mode Power Supply Design Guide Table Of Contents Product Information Total


    Original     		PDF Power247TM, ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A FSD200 equivalent fan7610 KA3525A application note 500w smps audio amplifier circuit diagram

    transformer egston

    Abstract: 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical
    Text: AN2844 Application note 15 W wide range SMPS for metering based on ESBT STC03DE220HV and L6565 PWM controller 1 Introduction This document describes a 15-W flyback switched mode power supply SMPS application that uses an emitter-switched bipolar transistor (ESBT™) switch (STC03DE220HV) and


    Original     		PDF AN2844 STC03DE220HV L6565 STC03DE220HV) STEVAL-ISA057V1 transformer egston 702 TRANSISTOR smd AM003536 Egston V7142A smd schottky diode 702 universal input voltage power supply v7142 702 transistor smd code etd29 14 pin vertical

    74hc273

    Abstract: MPSA2222 opa548 audio amplifier schematics uln2803 application note ULN2803 equivalent "application notes" ULN2803 application note uln2803 of ULN2803 of power drivers MPSA2222A 16 relays using uln2803
    Text: CIRCUIT CELLAR IE M A G AZ IN E FÜR C O M PU TE R APPLICATIONS CONSIDERING THE DETAILS Bob Perrin I/O For Embedded Controllers Part 1: Digital I/O I/O, I/O, so off to work. Designing generic controllers with only guesstimations of what the endproduct I/O needs


    OCR Scan     		PDF 74HC244 74hc273 MPSA2222 opa548 audio amplifier schematics uln2803 application note ULN2803 equivalent "application notes" ULN2803 application note uln2803 of ULN2803 of power drivers MPSA2222A 16 relays using uln2803