Untitled
Abstract: No abstract text available
Text: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +
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APT60DF60HJ
OT-227)
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scr 8a 200v
Abstract: do213ab 50A 1200V SCR 5A 200V SCR die SCR 30A 100V USD635C 1n4436 US60A eh12a 1N1183
Text: Product Guide Power Semiconductors Microsemi more than solutions - enabling possibilities R TM Microsemi Power Semiconductors Contents Selection Military Qualified
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394hex
450sq.
678hex
scr 8a 200v
do213ab
50A 1200V SCR
5A 200V SCR die
SCR 30A 100V
USD635C
1n4436
US60A
eh12a
1N1183
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Untitled
Abstract: No abstract text available
Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT60GA60JD60
APT60GA60JD60
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: APT60DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~
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APT60DF60HJ
OT-227)
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PDF
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600v 30a IGBT
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V apt30gt60 APT30GT60BR APT44GA60BD30 MIC4452 fast recovery diode trr Pt
Text: APT44GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
EMI244)
600v 30a IGBT
Fast Recovery Bridge Rectifier, 60A, 600V
apt30gt60
APT30GT60BR
APT44GA60BD30
MIC4452
fast recovery diode trr Pt
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PDF
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600v 30a IGBT
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT30GT60BR APT54GA60BD30 MIC4452
Text: APT54GA60BD30 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT54GA60BD30
600v 30a IGBT
Fast Recovery Bridge Rectifier, 60A, 600V
APT30GT60BR
APT54GA60BD30
MIC4452
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PDF
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100A 300V IGBT
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V
Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT60GA60JD60
APT60GA60JD60
E145592
100A 300V IGBT
Fast Recovery Bridge Rectifier, 60A, 600V
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PDF
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Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: 600v 30a IGBT ultraFast Recovery Bridge Rectifier DIODE ED 15 Fast Recovery Rectifier, 300V Ultrafast Recovery Rectifier Bridge APT47GA60JD40 APT6017LLL MIC4452
Text: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT47GA60JD40
E145592
Fast Recovery Bridge Rectifier, 60A, 600V
600v 30a IGBT
ultraFast Recovery Bridge Rectifier
DIODE ED 15
Fast Recovery Rectifier, 300V
Ultrafast Recovery Rectifier Bridge
APT47GA60JD40
APT6017LLL
MIC4452
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7512N
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V 55-12NO7
Text: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0
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55-12NO7
55-12NO7
75-12NO7
7512N
Fast Recovery Bridge Rectifier, 60A, 600V
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PDF
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IXYS DS
Abstract: No abstract text available
Text: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM
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75-12NO7
75-12NO7
55-12NO7
IXYS DS
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PDF
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Untitled
Abstract: No abstract text available
Text: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0
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55-12NO7
55-12NO7
75-12NO7
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PDF
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Untitled
Abstract: No abstract text available
Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT60GA60JD60
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: VBE 55-12NO7 ECO-PAC TM Single Phase Rectifier Bridge IdAV = 59 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 1200 1200 D Typ A N VBE 55-12NO7 K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM
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55-12NO7
55-12NO7
75-12NO7
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PDF
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Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: No abstract text available
Text: VUE 75-12NO7 ECO-PAC TM Threee Phase Rectifier Bridge IdAV = 74 A VRRM = 1200 V trr = 40 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 1200 1200 D Typ VUE 75-12NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0
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75-12NO7
55-12NO7
Fast Recovery Bridge Rectifier, 60A, 600V
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Fast Recovery Bridge Rectifier, 60A, 600V
Abstract: APT60GA60JD60 APT60GT60BR MIC4452 fast recovery diode 1a
Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT60GA60JD60
E145592
Fast Recovery Bridge Rectifier, 60A, 600V
APT60GA60JD60
APT60GT60BR
MIC4452
fast recovery diode 1a
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PDF
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bridge rectifier 24V AC to 24v dc
Abstract: 1N5408 smd diodes GSIB1560
Text: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4
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250ns;
DO-204AL
DO-41)
DO-220AA
V-540V;
V-440V
bridge rectifier 24V AC to 24v dc
1N5408 smd diodes
GSIB1560
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triac mw 131 600d
Abstract: 65n06
Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717
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Untitled
Abstract: No abstract text available
Text: APT30DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +
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APT30DF60HJ
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT47GA60JD40
E145592
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PDF
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Untitled
Abstract: No abstract text available
Text: APT47GA60JD40 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT47GA60JD40
APT47GA60JD40
E145592
switchin27
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PDF
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Untitled
Abstract: No abstract text available
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
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APT44GA60B
Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
APT44GA60SD30
APT44GA60B
APT44GA60BD30
APT44GA60SD30
MIC4452
SD30
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PDF
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Untitled
Abstract: No abstract text available
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
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474J
Abstract: No abstract text available
Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
APT44GA60SD30
474J
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PDF
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