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    FAST SWITCHING MOSFET Search Results

    FAST SWITCHING MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    FAST SWITCHING MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AF4409

    Abstract: No abstract text available
    Text: AF4409P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching - Capable of 2.5V Drive The advanced power MOSFET provides the designer with the best combination of fast switching,


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    AF4409P 440wer 4409P AF4409 PDF

    70N03

    Abstract: on 70n03 diode marking 33a on semiconductor diode marking 33A on 70N03 DATASHEET diode marking 33A marking 33a on semiconductor N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V AF70N03
    Text: AF70N03 N-Channel Enhancement Mode Power MOSFET „ Features „ General Description -Low Gate Charge -Simple Drive Requirement -Fast Switching -RoHS Compliant -Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching,


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    AF70N03 O-252 O-252 70N03 70N03 on 70n03 diode marking 33a on semiconductor diode marking 33A on 70N03 DATASHEET diode marking 33A marking 33a on semiconductor N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V AF70N03 PDF

    4835p

    Abstract: 4835p mosfet 4835 mosfet mosfet 4835 4835P Datasheet AF4835P 4835 D 4835 aa RD
    Text: AF4835P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4835P 015x45 4835p 4835p mosfet 4835 mosfet mosfet 4835 4835P Datasheet AF4835P 4835 D 4835 aa RD PDF

    4410n mosfet

    Abstract: 4410n mosfet 4410n AA MARKING CODE SO8
    Text: AF4410N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4410N 4410N 4410n mosfet mosfet 4410n AA MARKING CODE SO8 PDF

    9503P

    Abstract: No abstract text available
    Text: AF9503P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, rugged


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    AF9503P 015x45 9503P PDF

    Untitled

    Abstract: No abstract text available
    Text: AF9515P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, rugged


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    AF9515P 015x45 PDF

    85n08

    Abstract: No abstract text available
    Text: AF85N08 N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low Gate Charge - Simple Drive Requirement - Fast Switching - RoHS Compliant - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching,


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    AF85N08 O-263 O-220) O-220 85n08 PDF

    AF8510C

    Abstract: N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
    Text: AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET „ Features „ General Description - Lower On-Resistance - Simple Drive Requirement - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching,


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    AF8510C 15x45 AF8510C N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET PDF

    AF4971

    Abstract: 4971N
    Text: AF4971N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-Resistance - Fast Switching Speed - SO-8/PDIP-8 Packages - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching,


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    AF4971N 4971N information33 AF4971 PDF

    4953p

    Abstract: max5390 mosfet 4953
    Text: AF4953P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4953P 4953p max5390 mosfet 4953 PDF

    4835p mosfet

    Abstract: 4835P 4835 so-8
    Text: AF4835P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4835P 4835P 4835p mosfet 4835 so-8 PDF

    60n03

    Abstract: 60N03 mosfet 60N03 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET 60N03 AF60N03 510 MOSFET 60N03 to TO-252 N-channel MOSFET IDA45
    Text: AF60N03 N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching,


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    AF60N03 O-252 O-252 60N03 60n03 60N03 mosfet 60N03 m N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET 60N03 AF60N03 510 MOSFET 60N03 to TO-252 N-channel MOSFET IDA45 PDF

    A1 SOT323 MOSFET P-CHANNEL

    Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
    Text: AF1333P P-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline SOT323 The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.


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    AF1333P OT323) -550mA 1333P OT323 A1 SOT323 MOSFET P-CHANNEL marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P PDF

    AF95

    Abstract: No abstract text available
    Text: AF9563P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, rugged


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    AF9563P 015x45 AF95 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC2038LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device • Low On-Resistance  Low Input Capacitance 4.5A  Fast Switching Speed 56mΩ @ VGS = 1.8V 3.5A  Low Input/Output Leakage 74mΩ @ VGS = -4.5V -3.1A  Fast Switching Speed


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    DMC2038LVT AEC-Q101 DS35417 PDF

    mosfet 4410n

    Abstract: 4410N 4410n mosfet 4410N SO-8 AA MARKING CODE SO8 AF4410N
    Text: AF4410N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4410N govin168 goldlight88 mosfet 4410n 4410N 4410n mosfet 4410N SO-8 AA MARKING CODE SO8 AF4410N PDF

    MOSfet 4362

    Abstract: 4362n N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET SO-8 AF4362N
    Text: AF4362N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4362N MOSfet 4362 4362n N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V MOSFET SO-8 AF4362N PDF

    Untitled

    Abstract: No abstract text available
    Text: AF9575P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-Resistance - Fast Switching Performance - Pb Free Plating Product The advanced power MOSFET provides the designer with the best combination of fast switching, rugged


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    AF9575P 015x45 PDF

    AA MARKING CODE SO8

    Abstract: No abstract text available
    Text: AF4811P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4811P 4811P AA MARKING CODE SO8 PDF

    AA MARKING CODE SO8

    Abstract: No abstract text available
    Text: AF9410N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF9410N 9410N AA MARKING CODE SO8 PDF

    4811P

    Abstract: AF4811P
    Text: AF4811P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4811P 015x45 4811P AF4811P PDF

    4825p

    Abstract: 4825p 8 pin mosfet pin voltage 4825p mosfet 4835 so-8 mosfet 4835 D mosfet 4825p AF4825P AA MARKING CODE SO8 4835 mosfet
    Text: AF4825P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4825P 4825P 4825p 8 pin mosfet pin voltage 4825p mosfet 4835 so-8 mosfet 4835 D mosfet 4825p AF4825P AA MARKING CODE SO8 4835 mosfet PDF

    4407p

    Abstract: AF4407
    Text: AF4407P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching Characteristic The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF4407P 4407P AF4407 PDF

    9435 so8

    Abstract: MOSFET code 9435 9435 mosfet 9435p 9435 so package
    Text: AF9435P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low Gate Charge - Fast Switching Speed The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and


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    AF9435P 9435P 9435 so8 MOSFET code 9435 9435 mosfet 9435 so package PDF