FBGA 11x13
Abstract: k8p2716 K8P2716UZC
Text: Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP 20x14mm , 64ball FBGA (11x13, 1.0mm ball pitch) Page Mode, (8M x16, 16Mb x8) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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K8P2716UZC
128Mb
56Pin
20x14mm)
64ball
11x13,
64-Ball
60Solder
FBGA 11x13
k8p2716
K8P2716UZC
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PDF
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EM6A9325
Abstract: No abstract text available
Text: EtronTech EM6A9325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.4 June/2003) Features • 4096 refresh cycles/64ms • Single 2.5V power supply • Interface: LVCMOS •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz
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EM6A9325
June/2003)
cycles/64ms
11x13mm,
32bit
EM6A9325BG-7
133MHz
11x13
125y1
EM6A9325
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PDF
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PC133 registered reference design
Abstract: 16 MB Micron EDO SIMM Module mt1l DS1849 10EF1 10EB2
Text: PRELIMINARY 512MB / 1GB x72, ECC 168-PIN REGISTERED FBGA SDRAM DIMM SYNCHRONOUS DRAM MODULE MT36LSDF6472G - 512MB MT36LSDF12872G - 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View)
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512MB
168-PIN
168-pin,
PC100
PC133
512MB
MT8VR12818AG
MT16VR25616AG
PC133 registered reference design
16 MB Micron EDO SIMM Module
mt1l
DS1849
10EF1
10EB2
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PDF
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EM669325
Abstract: No abstract text available
Text: EtronTech EM669325 4M x 32 Low Power SDRAM LPSDRAM Preliminary (Rev 0.6 Sep./2003) Features • 4096 refresh cycles/64ms • Single 3.0V, or 3.3V power supply • Interface: LVTTL •Package : 90 ball-FBGA, 11x13mm, Lead Free • • • • • Clock rate: 133/125/100 MHz
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EM669325
cycles/64ms
11x13mm,
32bit
EM669325BG-7
133MHz
11x13
90-FBGA,
EM669325
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PDF
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NP351-064-148
Abstract: NP351-18464 NP351 NP351-080-128 20890 14422 NP351-180-139 NP35 400X400 NP351-11230
Text: NP351 Series Open Top Fine Ball Grid Array (FBGA, 0.80mm Pitch) Specifications Part Number (Details) 1,000MΩ min. at 100V DC Insulation Resistance: Dielectric Withstanding Voltage: 100V AC for 1 minute 100m Ω max. at 10mA/20mV max. Contact Resistance:
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NP351
10mA/20mV
CP351-30413-*
NP351-30431-*
NP351-43216-*
NP351-52009-*
NP351-532-83-*
NP351-064-148
NP351-18464
NP351-080-128
20890
14422
NP351-180-139
NP35
400X400
NP351-11230
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History Revision No. History 0.1 Defined Preliminary Specification 0.2 1 2) 3) 4) 5) 6) 0.3 Defined IDD Spec. 0.4 Delited Preliminary. 0.5 Changed IDD Spec. 0.6 133MHz Speed Added 0.7 Changed FBGA Package Size from 11x13 to 8x13.
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HY57V283220T/
HY5V22F
32Bit
133MHz
11x13
an283220T
400mil
86pin
HY57V283220T
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PDF
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3MA18
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb: x32 BAT-RAM SDRAM SYNCHRONOUS DRAM MT48LC2M32LFFC , MT48V2M32LFFC 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES BALL ASSIGNMENT Top View 90-Ball FBGA • Temperature Compensated Self Refresh (TCSR)
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MT48LC2M32LFFC
MT48V2M32LFFC
90-Ball
096-cycle
MT48LC2M32LFFC-10
90-pin,
11x13
BatRamY94W
3MA18
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PDF
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Untitled
Abstract: No abstract text available
Text: HY57V283220T/ HY5V22F 4 Banks x 1M x 32Bit Synchronous DRAM Revision History 0.1 : new generation 0.2 : FBGA Ball configuration typo 수정 Functional Block Diagram A10 -> A11 DC Operation Condition 에서 VDDmin 수정 3.0V -> 3.135V Capacitance Value 수정 C11,3,5 -> 4pf / C12 3.8 ->4pf
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HY57V283220T/
HY5V22F
32Bit
11x13
DESCRIV22F
HY57V283220T
400mil
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PDF
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Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 64Mb: x32 BAT-RAM LOW POWER SDRAM SYNCHRONOUS DRAM MT48LC2M32LFFC , MT48V2M32LFFC 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES BALL ASSIGNMENT Top View 90-Ball FBGA • Temperature Compensated Self Refresh (TCSR)
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MT48LC2M32LFFC
MT48V2M32LFFC
90-Ball
096-cycle
MT48LC2M32LFFC-10
90-pin,
11x13
BatRamY94W
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PDF
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transistor smd G46
Abstract: fluke 52 k/j Thermocouple 7512 pin diodes in micro semi data sheet smd transistor marking ey SMD MARKING CODE h5 MCP Technology Trend BGA-64 pad AMD reflow soldering profile BGA SMD MARKING CODE l6 BGA Solder Ball 0.6mm
Text: FBGA User’s Guide Version 4.2 -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG
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N32-2400
22142J
transistor smd G46
fluke 52 k/j Thermocouple
7512 pin diodes in micro semi data sheet
smd transistor marking ey
SMD MARKING CODE h5
MCP Technology Trend
BGA-64 pad
AMD reflow soldering profile BGA
SMD MARKING CODE l6
BGA Solder Ball 0.6mm
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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PDF
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K9F2G08U0B
Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
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BR-09-ALL-001
K9F2G08U0B
K9HCG08U1M-PCB0
K9NCG08U5M-PCB0
K9F1G08U0C
K9F4G08U0B-PCB0
K9F2G08U0B-PCB0
K9F4G08U0B
K9WBG08U1M
K9F1G08U0C-PCB0
K9G4G08U0B
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K5W1G
Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION
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BR-07-ALL-001
K5W1G
KMCME0000M-B998
k9hbg08u1m
K9MCG08U5M
K5E1257ACM
MC4GE04G5APP-0XA
b998
KMCME0000M
hd161hj
K5D1G
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RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
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BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
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S29WS256P
Abstract: S29WS-P S73WS-P
Text: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion
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S73WS-P
S29WS256P
S29WS-P
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S71WS512PD0
Abstract: S29WS512P S29WS-P S71WS512PC0 S71WS512PC0HF3 S71WS512PD0HF3 S71WS-P
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
S71WS512PD0
S29WS512P
S29WS-P
S71WS512PC0
S71WS512PC0HF3
S71WS512PD0HF3
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PDF
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Untitled
Abstract: No abstract text available
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
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S71WS128PB0
Abstract: S71WS256PC0HH3YR0 S71WS512PD0HF3 H-EE 32 S71WS512PD0HH3 S71WS256 TRAY FBGA 11X13
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
S71WS128PB0
S71WS256PC0HH3YR0
S71WS512PD0HF3
H-EE 32
S71WS512PD0HH3
S71WS256
TRAY FBGA 11X13
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66 ball nor flash
Abstract: S71WS-P BGA Package 14x14 S71WS128PC0 S71WS512PD0 spansion top marking S29WS128P S29WS256P S29WS512P S29WS-P
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
66 ball nor flash
BGA Package 14x14
S71WS128PC0
S71WS512PD0
spansion top marking
S29WS128P
S29WS256P
S29WS512P
S29WS-P
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512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2
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S72WS-N
16-bit
512MB NOR FLASH
BTA160
BGA 130 MCP NAND DDR
S72WS512NFFKFWZ2
Flash MCp nand DRAM 137-ball
ball 128 mcp
NAND FLASH BGA
S29WS256N
S72WS256ND0
S72WS256NDE
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S71WS256PC0HH3
Abstract: S71WS512PD0HH3 SWM032D spansion date code marking TRAY FBGA 11X13 S71WS256PD0HH3 S71WS256PC0HH3YR SWM064D133S1R S71WS256PC0HF3
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-P
S71WS256PC0HH3
S71WS512PD0HH3
SWM032D
spansion date code marking
TRAY FBGA 11X13
S71WS256PD0HH3
S71WS256PC0HH3YR
SWM064D133S1R
S71WS256PC0HF3
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S72WS512PFFJF9GH
Abstract: BGA 15X15 BGA 130 MCP NAND DDR 12X12 POP PACKAGE TRAY 15x15 bta 137 S72WS512PFFKFKGH N-ADQ14 NAND01
Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information
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S72WS-P
S72WS512PFFJF9GH
BGA 15X15
BGA 130 MCP NAND DDR
12X12 POP PACKAGE
TRAY 15x15
bta 137
S72WS512PFFKFKGH
N-ADQ14
NAND01
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BGA 130 MCP NAND DDR
Abstract: JEP95 137-Ball DSA00272754 Flash MCp nand DRAM 137-ball S72WS512PEF N-ADQ12 130 MCP NAND DDR NAND FLASH BGA Flash MCp nand DRAM 107-ball
Text: S72WS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode NOR Flash NAND Flash or NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-P based MCP/PoP Products Cover Sheet Data Sheet Advance Information
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S72WS-P
BGA 130 MCP NAND DDR
JEP95
137-Ball
DSA00272754
Flash MCp nand DRAM 137-ball
S72WS512PEF
N-ADQ12
130 MCP NAND DDR
NAND FLASH BGA
Flash MCp nand DRAM 107-ball
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TRAY FBGA 11X13
Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72MS-P
TRAY FBGA 11X13
S72MS512PE0HF94V
MCP NAND sDR
BGA 15X15
137-Ball
MCP NAND DDR
S30MS-P
Spansion NAND Flash
Spansion NAND Flash DIE
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