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    FBGA 9 X 12 PACKAGE TRAY Search Results

    FBGA 9 X 12 PACKAGE TRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    FBGA 9 X 12 PACKAGE TRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1f1-1717-a19

    Abstract: 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9
    Text: Jul. 2010 Packing Tray Material Line-up Quantity Bake Temp. 8.1*15.1 8*12 ,256M DDR 5G 60WMBG Package 8*12 130℃ MAX 60M/54WBGA-8.10X15.10-8X12-A TR_MARKING LA69-00635A Material Code Material Spec 48TBGA,10.0*9.0(8*16) 8*16 130℃ MAX 48-TBGA-10.0X9.0-8X16-O


    Original     		PDF 60WMBG 60M/54WBGA-8 10X15 10-8X12-A LA69-00635A 48TBGA 48-TBGA-10 0-8X16-O LA69-00267A ADS11981 1f1-1717-a19 153FBGA BGA 6x6 tray FBGA tray kostat tray bga 6x6 169fbga-12.0x16.0-8x16-0 78BOC-11 78BOC ePAK BGA 5x5 tray 153FBGA-9

    Untitled

    Abstract: No abstract text available
    Text: HEAT PROOF 7 135°C MAX. NEC PPE A' 9.2 13.15 A 10x24=240 8.77 118.35 FBGA9×9×1.31 135.9 UNIT : mm 9.2 12.90 296.7 9.15 315.0 322.6 SECTION A – A' 6.32 (6.35) 7.62 9.2 Applied Package Quantity (pcs) 80-pin • Plastic FBGA ( 9) MAX. 240 Tray Material


    Original     		PDF 80-pin

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Text: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd

    fBGA package tray 12 x 19

    Abstract: EPAK TRAY FBGA THICK TRAY fbga Substrate design guidelines JEDEC Kostat FBGA EPAK Kostat PSR4000 SLB128B AN-1125
    Text: Table of Contents Introduction . 2 CHIP SCALE PACKAGES . 2


    Original     		PDF

    taiyo PSR4000

    Abstract: Shipping Trays kostat 10 x 10 nitto hc100 Kostat tray PSR4000 aus5 EPAK EPAK TRAY JEDEC Kostat PSR4000 aus5
    Text: Table of Contents Introduction . 2 CHIP SCALE PACKAGES . 2


    Original     		PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    K5W1G

    Abstract: KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage August 2007 MEMORY AND STORAGE DRAM DDR3 SDRAM DDR2 SDRAM DDR SDRAM SDRAM MOBILE SDRAM RDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND FLASH NAND FLASH ORDERING INFORMATION


    Original     		PDF BR-07-ALL-001 K5W1G KMCME0000M-B998 k9hbg08u1m K9MCG08U5M K5E1257ACM MC4GE04G5APP-0XA b998 KMCME0000M hd161hj K5D1G

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Text: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


    Original     		PDF BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03

    TAIYO PSR 4000

    Abstract: manual PACE PSR 800 HC-100-X2 Ablebond 8360 TAIYO PSR 4000 soldermask JEDEC Kostat FBGA PSR4000-AUS5 TAIYO PSR 2000 csp192 FBGA THICK TRAY
    Text: National Semiconductor Application Note 1125 Shaw W. Lee and Wayne Lee June 2000 Introduction CHIP SCALE PACKAGES Laminate substrate based CSPs are an extension of National Semiconductor’s current Plastic Ball Grid Array PBGA technology and are the package of choice for portable applications. CSPs are available in two package designs: Laminate CSP and Fine Pitch Ball Grid Array (FBGA).


    Original     		PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    0909NS

    Abstract: GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3
    Text: DRAM Code Information 1/9 K4XXXXXXXX - XXXXXXX 1 2 3 4 1. Memory (K) 2. DRAM : 4 3. Small Classification A : Advanced Dram Technology B : DDR3 SDRAM C : Network-DRAM D : DDR SGRAM E : EDO F : FP G : GDDR5 SDRAM H : DDR SDRAM J : GDDR3 SDRAM K : Mobile SDRAM PEA


    Original     		PDF 16K/16ms 4K/32ms 8K/64ms 16K/32ms 8K/32ms 2K/16ms 4K/64ms 429ns 667ns 0909NS GDDR5 10x10mm, LGA, 44 pin 170-FBGA 60-LGA MARKING CL4 FBGA DDR3 x32 170FBGA 60-FBGA PC133 133Mhz cl3

    S25FL129

    Abstract: S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K
    Text: Spansion Product Selector Guide Embedded and Mobile Applications Portfolio March 2011 Spansion ® Products Portfolio . Automotive . Consumer electronics . Gaming . Industrial equipment . Machine-to-Machine Spansion offers a wide range of NOR Flash memory solutions in multiple voltages,


    Original     		PDF 128Mb 256Mb 512Mb 1-866-SPANSION 43715B S25FL129 S98GL064NB0 S98GL064 s29gl256p90 S70FL256 S98GL064NB s71vs128 S25FL129P WSON 6x8 S25FL032K

    S25FL256

    Abstract: S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K
    Text: Spansion Product Selector Guide April 2012 Spansion ® Products Portfolio Spansion offers a wide range of NOR Flash memory solutions in multiple voltages, densities and packages expressly designed and optimized for embedded and mobile applications, including:


    Original     		PDF 128Mb 256Mb 512Mb 43715C S25FL256 S25FL512 S98GL064 S25FL256* spansion S98GL064NB S98GL064NB0 S25FL204 s25fl128s S25FL129 S25FL032K

    LPCC-8

    Abstract: DRAM BGA TRAY qfn 6 x 6 TRAY
    Text: Digital Media Code Information • MOS • Linear-IC • SIP August 2009 -1- Part Number Decoder MOS Code Information 1/2 Last Updated : August 2009 S5XXXXXXXX - XXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1. System LSI (S) 9~10. Mask Option 2. Large Classification : MOS (5)


    Original     		PDF AG01000 LPCC-8 DRAM BGA TRAY qfn 6 x 6 TRAY

    movinand

    Abstract: movinand DECODER 1g nand mcp movi nand S3C49VCX03 16G nand flash S3C49v 8G nand 16G nand MCP NAND
    Text: MOVI NAND Code Information 1/3 Last Updated : November 2008 KMXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 1. Memory (K) 9 10 11 12 13 14 15 16 17 18 4. MoviNAND Density & Vcc & Org. & BB Co de 2. MOVI NAND/MCP : M moviNAN D Den NAND Den Ce ll 3. Small Classification


    Original     		PDF

    L1-L10

    Abstract: MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S71WS-N S29WS128N S29WS256N S71WS128NB0
    Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


    Original     		PDF S71WS-N S71WS-N L1-L10 MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S29WS128N S29WS256N S71WS128NB0

    S29WS128N

    Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
    Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S71WS-N S71WS-N S29WS128N S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N marking YJ AM

    ADQ11

    Abstract: 12X12 POP PACKAGE ADQ14 d3d16
    Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet


    Original     		PDF S72NS-P ADQ11 12X12 POP PACKAGE ADQ14 d3d16

    74LVT162244

    Abstract: 74LVT162244G 74LVT162244MEA 74LVT162244MTD 74LVTH162244 74LVTH162244G 74LVTH162244MEA 74LVTH162244MEX LVT162244 LVTH162244
    Text: Revised June 2002 74LVT162244 • 74LVTH162244 Low Voltage 16-Bit Buffer/Line Driver with 3-STATE Outputs and 25Ω Series Resistors in the Outputs General Description Features The LVT162244 and LVTH162244 contain sixteen noninverting buffers with 3-STATE outputs designed to be


    Original     		PDF 74LVT162244 74LVTH162244 16-Bit LVT162244 LVTH162244 74LVT162244 74LVT162244G 74LVT162244MEA 74LVT162244MTD 74LVTH162244 74LVTH162244G 74LVTH162244MEA 74LVTH162244MEX

    DA12A

    Abstract: No abstract text available
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		PDF S72WS-N 16-bit DA12A

    ball 128 mcp

    Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
    Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet


    Original     		PDF S72NS-P ball 128 mcp MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 MCP NAND D3-D16