Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET P DESCRIPTION The FC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed
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FC36V6472A
MGFC36V6472A
45dBc
Item-01
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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mgfc30
Abstract: MGFC39V5964A
Text: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10
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MGFC36V3742
FC36V3742A
GFC36V4460
MGFC36V4460A
MGFC38VS258
MGFC36V6964
mgfc30
MGFC39V5964A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V6472A c " 6 .4 ~ 7 .2 G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band am plifiers . The hermetically
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OCR Scan
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MGFC36V6472A
MGFC36V6472A
----45dBc
Item-01
Item-51
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GSO 69
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)
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OCR Scan
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MGFC36V6472A
MGFC36V6472A
45dBc
Item-01
Item-51
GSO 69
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