Untitled
Abstract: No abstract text available
Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
|
Original
|
PDF
|
FD8305N
FDR8305N
|
CBVK741B019
Abstract: F63TNR F852 FDR8305N FDR835N
Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
|
Original
|
PDF
|
FDR8305N
CBVK741B019
F63TNR
F852
FDR8305N
FDR835N
|
Untitled
Abstract: No abstract text available
Text: S E M IC O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
|
OCR Scan
|
PDF
|
FDR8305N
FD8305N
FD8305N
|
FDR8305N
Abstract: N-Channel 2.5V
Text: =Ml C O N D U C TO R tm FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
|
OCR Scan
|
PDF
|
FD8305N
FDR8305N
N-Channel 2.5V
|