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    FDD86326 Search Results

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    FDD86326 Price and Stock

    onsemi FDD86326

    MOSFET N-CH 80V 8A/37A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDD86326 Digi-Reel 9,700 1
    • 1 $2.8
    • 10 $1.814
    • 100 $2.8
    • 1000 $0.93261
    • 10000 $0.93261
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    FDD86326 Cut Tape 9,700 1
    • 1 $2.8
    • 10 $1.814
    • 100 $2.8
    • 1000 $0.93261
    • 10000 $0.93261
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    FDD86326 Reel 7,500 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.86975
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    Avnet Americas FDD86326 Reel 16 Weeks 2,500
    • 1 -
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    • 100 -
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    • 10000 $0.82833
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    Mouser Electronics FDD86326 31,007
    • 1 $1.75
    • 10 $1.39
    • 100 $1.13
    • 1000 $0.87
    • 10000 $0.869
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    Newark FDD86326 Reel 2,500
    • 1 $1.17
    • 10 $1.17
    • 100 $1.17
    • 1000 $1.17
    • 10000 $1.05
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    Onlinecomponents.com FDD86326
    • 1 -
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    • 1000 $1.809
    • 10000 $0.864
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    Richardson RFPD FDD86326 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.87
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    Avnet Silica FDD86326 17 Weeks 2,500
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    EBV Elektronik FDD86326 2,500 18 Weeks 2,500
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    New Advantage Corporation FDD86326 2,500 1
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $1.77
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    Fairchild Semiconductor Corporation FDD86326

    FDD86326 - N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDD86326 7,500 1
    • 1 $0.9664
    • 10 $0.9664
    • 100 $0.9084
    • 1000 $0.8214
    • 10000 $0.8214
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    FDD86326 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDD86326 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V TRENCH DPAK Original PDF

    FDD86326 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86326 O-252)

    FDD86326

    Abstract: FDD86
    Text: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86326 O-252) FDD86326 FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86326 N-Channel Shielded Gate PowerTrench MOSFET 80 V, 37 A, 23 m: Features General Description „ Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDD86326