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    FDMS7678 Price and Stock

    onsemi FDMS7678

    MOSFET N-CH 30V 17.5A/26A 8PQFN
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    DigiKey FDMS7678 Cut Tape 3,000 1
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    • 1000 $0.37743
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    FDMS7678 Digi-Reel 3,000 1
    • 1 $1.28
    • 10 $0.805
    • 100 $1.28
    • 1000 $0.37743
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    FDMS7678 Reel 3,000 3,000
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    Avnet Americas FDMS7678 Reel 15 Weeks 3,000
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    Mouser Electronics FDMS7678 77,754
    • 1 $0.89
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    Newark FDMS7678 Cut Tape 1,684 1
    • 1 $0.926
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    • 1000 $0.396
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    FDMS7678 Reel 3,000
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    Onlinecomponents.com FDMS7678
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    TME FDMS7678 1
    • 1 $0.816
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    Richardson RFPD FDMS7678 3,000
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    Avnet Asia FDMS7678 12,000 15 Weeks 3,000
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    EBV Elektronik FDMS7678 17 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMS7678

    Power Field-Effect Transistor, 17.5A, 30V, 0.0055ohm, N-Channel, MOSFET, MO-240AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDMS7678 1,200 1
    • 1 $0.3281
    • 10 $0.3281
    • 100 $0.3084
    • 1000 $0.2789
    • 10000 $0.2789
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    FDMS7678 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMS7678 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 30V 17.5A POWER56 Original PDF

    FDMS7678 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description ̈ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMS7678

    Untitled

    Abstract: No abstract text available
    Text: FDMS7678 N-Channel Power Trench MOSFET 30 V, 26 A, 5.5 mΩ Features General Description „ Max rDS on = 5.5 mΩ at VGS = 10 V, ID = 17.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMS7678 FDMS7678