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    onsemi FDT3N40TF

    MOSFET N-CH 400V 2A SOT223-4
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    Avnet Silica FDT3N40TF 143 Weeks 4,000
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    Fairchild Semiconductor Corporation FDT3N40TF

    Transistors
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    FDT3N40 Datasheets (1)

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    FDT3N40TF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 2A SOT-223 Original PDF

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    FDT3N40

    Abstract: FDT3N40TF JESD51-3
    Text: TM UniFET FDT3N40 400V N-Channel MOSFET Features Description • 2A, 400V, RDS on = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 4.5 nC)


    Original     		FDT3N40 OT-223 FDT3N40 FDT3N40TF JESD51-3 PDF

    FDT3N40

    Abstract: No abstract text available
    Text: TM UniFET FDT3N40 400V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 2A, 400V, RDS on = 3.4 @VGS = 10 V • Low gate charge ( typical 4.5 nC)


    Original     		FDT3N40 FDT3N40 PDF

    FDT3N40

    Abstract: No abstract text available
    Text: FDT3N40 N-Channel UniFETTM MOSFET 400 V, 2.0 A, 3.4 Features Description • RDS on = 3.4 Ω (Max.) @ VGS = 10 V, ID = 1.0 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		FDT3N40 FDT3N40 PDF